STT4NF30L N - CHANNEL 30V - 0.055Ω - 4A - TSOP-6 STripFET MOSFET PRELIMINARY DATA TYPE STT4NF 30L ■ ■ ■ V DSS R DS(on) ID 30 V < 0.065 Ω 4 A TYPICAL RDS(on) = 0.055 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ DC MOTOR DRIVE ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN PORTABLE/DESKTOP PCs TSOP-6 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Value Un it Drain-source Voltage (VGS = 0) Parameter 30 V Drain- gate Voltage (R GS = 20 kΩ) 30 V ± 20 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 4 A ID Drain Current (continuous) at Tc = 100 C 2.5 A Drain Current (pulsed) 16 A 2 W I DM (•) P tot o o T otal Dissipation at Tc = 25 C (•) Pulse width limited by safe operating area November 1998 1/5 STT4NF30L THERMAL DATA R thj -amb TJ T s tg (*)Thermal Resistance Junction-ambient Maximum O perating Junction Temperature Storage T emperature Max o 62.5 150 -55 to 150 C/W o C o C (*) Mounted on FR-4 board (t ≤ 5 sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 30 Unit V T c = 125 oC V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions ID = 250 µA V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance V GS = 10V ID = 2 A V GS = 4.5V I D = 2 A I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. Typ. Max. Unit 1 1.7 2.5 V 0.055 0.06 0.065 0.09 Ω Ω 4 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/5 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =6 A V GS = 0 Min. Typ. Max. 6 420 62 20 Unit S 550 80 30 pF pF pF STT4NF30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Typ. Max. Unit t d(on) tr Turn-on Time Rise Time Parameter V DD = 15 V ID = 2 A R G =4.7 Ω V GS = 4.5 V (see test circuit, figure 3) Test Con ditions 13 30 17 40 ns ns Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 24 V 8 3.2 2.6 12 nC nC nC Typ. Max. Unit 6 9 20 8 12 26 ns ns ns Typ. Max. Unit 4 16 A A 1.2 V ID = 4 A Min. V GS = 4.5 V SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions Min. V DD = 24 V I D = 4 A R G =4.7 Ω V GS = 4.5 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 4 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 A di/dt = 100 A/µs o Tj = 150 C V DD = 15 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 22 ns 13 nC 1.2 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STT4NF30L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/5 STT4NF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 5/5