STTH5L06 ® TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 5A VRRM 600 V IR (max) 150 µA Tj (max) 175 °C VF (max) 1.05 V trr (max) 95 ns FEATURES AND BENEFITS ■ ■ ■ ■ Ultrafast switching Low reverse recovery current Reduces switching & conduction losses Low thermal resistance DO-201AD STTH5L06 DESCRIPTION The STTH5L06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward current 20 A 5 A 110 A - 65 + 175 °C + 175 °C IF(AV) Average forward current Tl = 50°C IFSM Surge non repetitive forward current tp = 10 ms Tstg Storage temperature range Tj Maximum operating junction temperature November 2001 - Ed: 1A δ =0.5 Sinusoidal 1/5 STTH5L06 THERMAL PARAMETERS Symbol Parameter Maximum Unit °C/W Rth (j-l) Junction to lead L = 10mm 20 Rth (j-a) Junction to ambient (note 1) L = 10mm 75 Note 1: with recommended pad layout (see Fig. 12) STATIC ELECTRICAL CHARACTERISTICS Symbol IR VF Parameter Tests conditions Reverse leakage current VR = 600V Forward voltage drop IF = 5 A Min. Typ. Tj = 25°C Tj = 150°C 25 Tj = 25°C Max. Unit 5 µA 150 1.3 Tj = 150°C 0.85 V 1.05 To evaluate the maximum conduction losses use the following equation : P = 0.89 x IF(AV) + 0.033 IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter trr Reverse recovery time IF = 1 A dIF/dt = - 50 A/µs VR = 30V Tj = 25°C tfr Forward recovery time IF = 5 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax VFP Forward recovery time IF = 5 A dIF/dt = 100 A/µs 2/5 Tests conditions Min. Typ. Max. Unit 65 95 ns Tj = 25°C 150 ns Tj = 25°C 7 V STTH5L06 Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. P(W) IFM(A) 7 δ = 0.1 δ = 0.2 100.0 δ = 0.5 δ = 0.05 6 Tj=150°C (Maximum values) 5 δ=1 10.0 Tj=150°C (Typical values) 4 Tj=25°C (Maximum values) 3 1.0 2 T 1 IF(av)(A) δ=tp/T 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VFM(V) tp 0.1 5.0 5.5 0.0 6.0 Fig. 3: Relative variation of thermal impedance junction ambient versus pulse duration (DO-201AD, epoxy FR4, Lleads = 10mm).) 0.5 1.0 1.5 2.0 2.5 3.0 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) Zth(j-a)/Rth(j-a) 8 1.0 0.9 VR=400V Tj=125°C 7 0.8 IF=2 x IF(av) 6 0.7 IF=IF(av) 5 0.6 IF=0.5 x IF(av) δ = 0.5 0.5 4 0.4 3 IF=0.25 x IF(av) 0.3 δ = 0.2 0.2 2 T δ = 0.1 0.1 1 tp(s) Single pulse 0.0 1.E-01 1.E+00 δ=tp/T 1.E+01 dIF/dt(A/µs) tp 1.E+02 0 1.E+03 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 10 20 30 40 50 60 70 80 90 100 Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). trr(ns) Qrr(nC) 1000 500 VR=400V Tj=125°C 900 VR=400V Tj=125°C 450 800 400 700 350 IF=2 x IF(av) IF=IF(av) 600 IF=2 x IF(av) 500 IF=0.5 x IF(av) 300 IF=IF(av) 250 IF=0.5 x IF(av) 400 200 300 150 200 100 100 50 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 3/5 STTH5L06 Fig. 7: Softness factor versus dIF/dt (typical values). Fig. 8: Relative variations of dynamic parameters versus junction temperature. S factor 2.4 1.25 IF=IF(av) VR=400V Tj=125°C 2.2 S factor 2.0 1.00 1.8 IRM 1.6 0.75 1.4 QRR 1.2 0.50 1.0 0.8 0.25 0.6 0.4 0.00 0.2 0 10 20 30 40 50 60 IF=IF(av) VR=400V Reference: Tj=125°C Tj(°C) dIF/dt(A/µs) 70 80 90 25 100 Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). 50 75 100 125 Fig. 10: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) VFP(V) 200 10 IF=IF(av) Tj=125°C 9 IF=IF(av) VFR=1.1 x VF max. Tj=125°C 180 8 160 7 140 6 120 5 100 4 80 3 60 2 40 1 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 20 40 60 80 100 120 140 160 180 0 200 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). 20 40 60 80 100 120 140 160 180 200 Fig. 12: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) C(pF) Rth(j-a) (°C/W) 100 F=1MHz Vosc=30mV Tj=25°C 80 L lead=10mm 70 60 50 10 40 30 20 10 VR(V) 0 1 1 4/5 10 100 1000 S(cm²) 0 1 2 3 4 5 6 7 8 9 10 STTH5L06 PACKAGE MECHANICAL DATA DO-201AD B A E note 1 B E ØD ØC note 1 ØD note 2 DIMENSIONS REF. Millimeters Min. Max. A B ■ ■ Inches Min. 9.50 25.40 NOTES Max. 0.374 1 - The lead diameter ∅ D is not controlled over zone E 2 - The minimum length which must stay straight between the right angles after bending is 0.59"(15 mm) 1.000 C 5.30 0.209 D 1.30 0.051 E 1.25 0.049 Ordering code Marking Package Weight Base qty Delivery mode STTH5L06 STTH5L06 DO-201AD 600 Ammopack STTH5L06RL STTH5L06 DO-201AD 1900 Tape & reel Epoxy meets UL 94,V0 Lead bending and cutting: refer to ST application note AN1471 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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