STTH8R03G/D ® 300V HYPERFAST RECTIFIER MAJOR PRODUCT CHARACTERISTICS K IF(AV) 8A VRRM 300 V IRM (typ.) 4A Tj (max) 175 °C VF (max) 1.3 V trr (max) 30 ns A K TO-220AC STTH8R03D FEATURES AND BENEFITS ■ ■ ■ Designed for high frequency applications. Hyperfast recovery competes with GaAs devices. Allows size decrease of snubbers and heatsinks. K DESCRIPTION A The TURBOSWITCH "R" is an ultra high performance diode. This TURBOSWITCH family, which drastically cuts losses in associated MOSFET when run at high dIF/dt, is suited for HF OFF-Line SMPS and DC/DC converters. NC D2PAK STTH8R03G ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) RMS forward current 20 A IF(AV) Average forward current Tc = 140°C δ = 0.5 8 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 80 A Tstg Storage temperature range - 65 + 175 °C + 175 °C Tj Maximum operating junction temperature February 2001 - Ed: 1H 1/6 STTH8R03G/D THERMAL AND POWER DATA Symbol Rth (j-c) Parameter Junction to case Value Unit 2.5 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameter Tests conditions Reverse leakage current VR = VRRM Forward voltage drop IF = 8 A Min. Typ. Tj = 25°C 15 Tj = 125°C Max. Unit 10 µA 100 1.8 Tj = 25°C Tj = 125°C 1.05 1.3 Typ. Max. V Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.9 x IF(AV) + 0.05 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tests conditions IF = 0.5 A Irr = 0.25 A IR = 1A Min. 13 Tj = 25°C VR = 200 V IF = 8A dIF/dt = - 200A/µs ns 30 IF = 1 A dIF/dt = - 50 A/µs VR = 30V IRM Unit 4 Tj = 125°C S factor 5.5 A 0.4 TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP 2/6 Tests conditions Max. Unit Tj = 25°C IF = 8A dIF/dt = 100A/µs measured at 1.1xVFmax 200 ns Tj = 25°C IF = 8A 3.5 V dIF/dt = 100A/µs Min. Typ. STTH8R03G/D Fig. 1: Conduction losses versus average current Fig. 2: Forward voltage drop versus forward current. P(W) IFM(A) 15.0 δ = 0.05 δ = 0.1 δ = 0.2 100 δ = 0.5 Tj=125°C Maximum values 12.5 δ=1 10.0 Tj=125°C Typical values 7.5 Tj=25°C Maximum values 10 5.0 T 2.5 IF(av) (A) 0.0 0 2 4 δ=tp/T 6 VFM(V) tp 8 1 0.0 10 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0.5 1.5 2.0 2.5 3.0 3.5 4.0 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) Zth(j-c)/Rth(j-c) 10 1.0 VR=200V Tj=125°C IF= 2 x IF(av) 8 0.8 δ = 0.5 0.6 IF=IF(av) 6 δ = 0.2 0.4 IF= 0.5 x IF(av) 4 δ = 0.1 T 0.2 2 Single pulse tp(s) 0.0 1E-3 1E-2 δ=tp/T 1E-1 dIF/dt(A/µs) tp 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). trr(ns) Qrr(nC) 80 140 VR=200V Tj=125°C 70 60 VR=200V Tj=125°C 120 IF=2 x IF(av) 100 50 IF=2 x IF(av) 40 IF=IF(av) 80 IF=IF(av) 30 IF=0.5 x IF(av) 60 40 20 IF=0.5 x IF(av) 10 0 1.0 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 20 0 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 3/6 STTH8R03G/D Fig. 7: Softness factor (tb/ta) versus dIF/dt (typical values). S factor 0.6 0.5 0.4 0.3 0.2 IF < 2 x IF(av) VR=200V Tj=125°C 0.1 dIF/dt(A/µs) 0.0 0 50 100 150 200 250 300 350 400 450 500 Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). Fig. 8: Relative variation of dynamic parameters versus junction temperature (Reference: Tj=125°C). 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 Tj(°C) 50 75 100 125 tfr(ns) 300 IF=IF(av) Tj=125°C VFR=1.1 x VF max. IF=IF(av) Tj=125°C 250 200 150 100 50 dIF/dt(A/µs) dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm)(D2PAK) Rth(j-a) (°C/W) 80 D²PAK 70 60 50 40 30 20 10 0 IRM Fig. 10: Forward recovery time versus dIF/dt (90% confidence). VFP(V) 10 9 8 7 6 5 4 3 2 1 0 S factor S(cm²) 0 4/6 5 10 15 20 25 30 35 40 0 0 50 100 150 200 250 300 350 400 450 500 STTH8R03G/D PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E REF. Millimeters Inches A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0° 8° Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0° 8° C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm FOOTPRINT 16.90 10.30 5.08 1.30 3.70 8.90 5/6 STTH8R03G/D PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. A H2 C L5 L7 ØI L6 L2 D L9 F1 M F E G Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 16.40 typ. 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 2.6 typ. Diam. I ■ ■ ■ 0.645 typ. L4 M ■ Inches Min. L2 L4 Millimeters Ordering code Marking Package STTH8R03D STTH8R03D TO-220AC STTH8R03G STTH8R03G D2PAK STTH8R03G-TR STTH8R03G D2PAK Cooling method: by conduction (C) Recommended torque value (TO-220AC): 0.55 N.m. Maximum torque value (TO-220AC): 0.7 N.m. Epoxy meets UL 94,V0 3.75 Weight 1.86g 1.48g 1.48g 3.85 0.102 typ. 0.147 Base qty 50 50 1000 0.151 Delivery mode Tube Tube Tape & Reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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