STU10NC70Z STU10NC70ZI N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE STU10NC70Z STU10NC70ZI ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 700 V 700 V <0.75Ω <0.75Ω 9.4 A 9.4 A TYPICAL RDS(on) = 0.58Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 I-Max220 Max220 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS ■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STU10NC70Z VDS VDGR VGS Unit STU10NC70ZI Drain-source Voltage (VGS = 0) 700 V Drain-gate Voltage (RGS = 20 kΩ) 700 V Gate- source Voltage ±25 V ID Drain Current (continuos) at TC = 25°C 9.4 9.4(*) A ID Drain Current (continuos) at TC = 100°C 5.9 5.9(*) A Drain Current (pulsed) 37.6 37.6(*) A IDM (1) PTOT IGS VESD(G-S) Total Dissipation at TC = 25°C 160 55 W Derating Factor 1.28 0.44 W/°C Gate-source Current ±50 mA Gate source ESD(HBM-C=100pF, R=15KΩ) 4 KV dv/dt(●) Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Winthstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (•)Pulse width limited by safe operating area Sep 2000 -- 2000 V –65 to 150 °C 150 °C (1)ISD ≤9.4A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX (*)Limited only by maximum temperature allowed 1/10 STU10NC70Z/STU10NC70ZI THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Max220 I-Max220 0.78 2.27 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 9.4 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 400 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 700 ID = 1 mA, VGS = 0 Unit V 1 V/°C Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±10 µA Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 5.3A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. 3 Typ. 4 5 V 0.58 0.75 Ω 9.4 A DYNAMIC Symbol 2/10 Parameter gfs Forward Transconductance Ciss Input Capacitance Coss Crss Test Conditions VDS > ID(on) x RDS(on)max, ID =5.3A Min. Typ. Max. Unit 13 S 3550 pF Output Capacitance 250 pF Reverse Transfer Capacitance 30 pF VDS = 25V, f = 1 MHz, VGS = 0 STU10NC70Z/STU10NC70ZI ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON (RESISTIVE LOAD) Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 350V, ID = 5.3A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 560V, ID = 10.6 A, VGS = 10V Typ. Max. Unit 34 ns 12 ns 72 100 nC 19 nC 24 nC SWITCHING OFF (INDUCTIVE LOAD) Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 560V, ID = 10.6 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 34 ns 36 ns 80 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 9.4 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 10.6 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 9.4 A 37.6 A 1.6 V 660 ns 8.7 µC 26 A GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Test Conditions Min. Typ. 25 Max. Unit Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) V αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance IGS = 50 mA, VGS = 0 90 Ω Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STU10NC70Z/STU10NC70ZI Safe Operating Area For Max220 Safe Operating Area For I-Max220 Thermal Impedance For Max220 Thermal Impedance For I-Max220 Output Characteristics Transfer Characteristics 4/10 STU10NC70Z/STU10NC70ZI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/10 STU10NC70Z/STU10NC70ZI Source-drain Diode Forward Characteristics 6/10 STU10NC70Z/STU10NC70ZI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STU10NC70Z/STU10NC70ZI Max220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.3 TYP. 4.6 0.169 TYP. MAX. 0.181 A1 2.2 2.4 0.087 0.094 A2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.18 0.023 D 15.9 16.3 0.626 0.641 D1 9 9.35 0.354 0.368 D2 0.8 1.2 0.031 0.047 D3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 E 10.05 10.35 0.396 0.407 L 13.2 13.6 0.520 0.535 L1 3 3.4 0.118 0.133 D1 D2 A1 A2 A C D3 b b2 b1 D e E L1 L P011R 8/10 STU10NC70Z/STU10NC70ZI I-Max220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.6 2.75 0.102 0.108 A2 1.95 2.15 0.077 0.084 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.017 0.023 D 15.9 16.3 0.626 0.641 D1 12.5 12.9 0.492 0.508 D2 0.6 1 0.023 0.039 D3 1.75 2.15 0.069 0.084 e 2.44 2.64 0.096 0.104 E 10.05 10.35 0.396 0.407 L 13.2 13.6 0.520 0.535 L1 3 3.4 0.118 0.133 P011S 9/10 STU10NC70Z/STU10NC70ZI Information furnished is believed to be accurate and reliable. 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