STB12NK80Z STP12NK80Z - STW12NK80Z N-CHANNEL 800V - 0.65Ω - 10.5A - TO220-D²PAK-TO247 Zener-Protected SuperMESH™ MOSFET General features VDSS Type STB12NK80Z STP12NK80Z STW12NK80Z Package RDS(on) 800 V <0.75 Ω 800 V <0.75 Ω 800 V <0.75 Ω ID Pw 10.5 A 10.5 A 10.5 A 190 W 190 W 190 W 3 1 ■ EXTREMELY HIGH dv/dt CAPABILITY ■ IMPROVED ESD CAPABILITY ■ 100% AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEABILITY 3 2 2 1 TO-220 3 TO-247 1 D²PAK Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Applications ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTOR AND PFC Order codes Sales Type Marking Package Packaging STB12NK80ZT4 B12NK80Z D²PAK TAPE & REEL STP12NK80Z P12NK80Z TO-220 TUBE STW12NK80Z W12NK80Z TO-247 TUBE September 2005 Rev 2 1/15 www.st.com 15 STB12NK80Z - STP12NK80Z - STW12NK80Z 1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Drain-Source Voltage (VGS = 0) 800 V Drain-gate Voltage (RGS = 20kΩ) 800 V Gate-Source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 10.5 A ID Drain Current (continuous) at TC = 100°C 6.6 A Drain Current (pulsed) 42 A Total Dissipation at TC = 25°C 190 W Derating Factor 1.51 W/°C Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) 6000 V dv/dt Note 1 Peak Diode Recovery voltage slope 4.5 V/ns -55 to 150 °C VDS VDGR VGS IDM Note 2 PTOT Tj Tstg Table 2. Parameter Operating Junction Temperature Storage Temperature Thermal data TO-220/D²PAK Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-amb Max Tl Table 3. Maximum Lead Temperature For Soldering Purpose TO-247 0.66 62.5 Unit °C/W 50 °C/W 300 °C Avalanche characteristics Symbol Parameter Max Value Unit IAR Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max) 10.5 A EAS Single Pulse Avalanche Energy (starting Tj=25°C, ID=IAR, VDD = 50V) 400 mJ 2/15 STB12NK80Z - STP12NK80Z - STW12NK80Z 2 2 Electrical characteristics Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Test Conditions ID = 1mA, V GS= 0 Min. Typ. Max. 800 Unit V VDS = Max Rating, VDS = Max Rating,Tc = 125°C 1 50 µA µA Gate Body Leakage Current (VDS = 0) VGS = ±20V ±10 µA VGS(th) Gate Threshold Voltage VDS= VGS, ID = 100 µA 3.75 4.5 V RDS(on) Static Drain-Source On Resistance VGS= 10 V, ID= 4.5 A 0.65 0.75 Ω Typ. Max. Unit Table 5. Symbol gfs Note 4 Ciss Coss Crss Coss eq. Note 5 Qg Qgs Qgd Table 6. Symbol td(on) tr td(off) tf tr(Voff) tf tc 3 Dynamic Parameter Forward Transconductance Test Conditions Min. VDS =15V, ID = 5.25A 12 S Input Capacitance VDS =25V, f=1 MHz, V GS=0 Output Capacitance Reverse Transfer Capacitance 2620 250 53 pF pF pF Equivalent Ouput Capacitance VGS=0, VDS =0V to 640V 100 pF 87 14 44 nC nC nC Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=640V, ID = 10.5 A VGS =10V (see Figure 17) Switching times Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD=400 V, ID=5.25 A, RG=4.7Ω, VGS=10V (see Figure 18) VDD=400 V, ID=5.25A, RG=4.7Ω, VGS=10V (see Figure 18) VDD=640 V, ID=10.5A, RG=4.7Ω, VGS=10V (see Figure 18) Min. Typ. Max. Unit 30 18 ns ns 70 20 ns ns 16 15 28 ns ns ns 3/15 STB12NK80Z - STP12NK80Z - STW12NK80Z 2 Electrical characteristics Table 7. Source drain diode Symbol Parameter ISD ISDMNote 2 Source-drain Current Source-drain Current (pulsed) VSDNote 4 Forward on Voltage ISD=10.5 A, VGS=0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=10.5A, di/dt = 100A/µs, VDD=100 V, Tj=150°C trr Qrr IRRM Table 8. Symbol BVGSO Note 6 Test Conditions Min. Typ. Max. Unit 10.5 42 A A 1.6 V 635 5.9 18.5 ns µC A Gate-source zener diode Parameter Gate-Source Breakdown Voltage Test Conditions Igs=±1mA (Open Drain) Min. 30 Typ. Max. Unit V (1) ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX (2) Pulse width limited by safe operating area (3) Limited only by maximum temperature allowed (4) Pulsed: pulse duration = 300µs, duty cycle 1.5% (5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%VDSS (6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/15 STB12NK80Z - STP12NK80Z - STW12NK80Z 2.1 2 Electrical characteristics Electrical Characteristics (curves) Figure 1. Safe Operating Area for TO-220/D²PAK Figure 2. Thermal Impedance for TO-220/D²PAK Figure 3. Safe Operating Area for TO-247 Figure 4. Thermal Impedance for TO-247 Figure 5. Output Characteristics Figure 6. Transfer Characteristics 5/15 2 Electrical characteristics STB12NK80Z - STP12NK80Z - STW12NK80Z Figure 7. Transconductance Figure 8. Figure 9. Gate Charge vs Gate -Source Voltage Figure 11. Capacitance Variations Static Drain-Source on Resistance Figure 10. Normalized Gate Threshold Voltage Figure 12. Normalized on Resistance vs vs Temperatute Temperature 6/15 STB12NK80Z - STP12NK80Z - STW12NK80Z Figure 13. Source-drain Diode Forward Characteristics 2 Electrical characteristics Figure 14. Normalized BVDSS vs Temperature Figure 15. Maximum Avalanche Energy vs Temperature 7/15 3 Test circuits 3 STB12NK80Z - STP12NK80Z - STW12NK80Z Test circuits Figure 16. Switching Times Test Circuit For Resistive Load Figure 17. Gate Charge Test Circuit Figure 18. Test Circuit For Indictive Load Switching and Diode Recovery Times Figure 20. Unclamped Inductive Load Test Circuit Figure 19. Unclamped Inductive Waveform 8/15 STB12NK80Z - STP12NK80Z - STW12NK80Z 4 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/15 STB12NK80Z - STP12NK80Z - STW12NK80Z 4 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/15 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STB12NK80Z - STP12NK80Z - STW12NK80Z 4 Package mechanical data TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 11/15 STB12NK80Z - STP12NK80Z - STW12NK80Z 4 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 E1 G 0.368 0.315 10.4 0.393 8.5 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 12/15 STB12NK80Z - STP12NK80Z - STW12NK80Z 5 5 Packing mechanical data Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 13/15 STB12NK80Z - STP12NK80Z - STW12NK80Z 6 Revision History 6 14/15 Revision History Date Revision 02-Sep-2005 2 Changes Inserted Ecopack indication STB12NK80Z - STP12NK80Z - STW12NK80Z 6 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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