STD16NF06 N-Channel 60V - 0.060Ω - 16A - DPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD16NF06 60V <0.070Ω 16A 3 ■ Typical R DS(on) = 0.060Ω ■ Exceptional dv/dt Capability ■ 100% Avalanche Tested ■ Application Oriented Characterization 1 DPAK TO-252 Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility Internal schematic diagram Applications ■ Audio Amplifiers ■ Power Tools ■ Automotive Environment Order codes Part Number Marking Package Packaging STD16NF06T4 D16NF06 TO-252 TAPE & REEL January 2006 Rev 1 1/11 www.st.com 11 STD16NF06 1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit VDS Drain-source Voltage (VGS = 0V) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V ± 20 V VGS Gate-Source Voltage ID Drain Current (continuous) at TC = 25°C 16 A ID Drain Current (continuous) at TC = 100°C 11 A Drain Current (pulsed) 64 A Total Dissipation at TC = 25°C 40 W Derating Factor 0.27 W/°C dv/dt Peak Diode Recovery voltage slope 10.5 V/ns EAS Single Pulse Avalanche Energy 178 mJ TJ Operating Junction Temperature Storage Temperature -55 to 175 °C IDM Note 4 PTOT Tstg Table 2. Thermal data RthJC Thermal Resistance Junction-case Max 3.75 °C/W RthJA Thermal Resistance Junction-amb Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C Tl 2/11 Parameter STD16NF06 2 2 Electrical characteristics Electrical characteristics ( TCASE = 25 °C unless otherwise specified ) Table 3. On/off states Symbol Parameter Test Conditions V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate Body Leakage Current (VDS = 0) VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(on) Static Drain-Source On Resistance VGS = 10V ID = 8A Table 4. Symbol gfs Note 5 Ciss Coss Crss Qg Qgs Qgd Table 5. Symbol td(on) tr td(off) tf ID = 250µA VGS= 0 Min. Typ. Max. 60 Unit V VDS = Max Rating VDS = Max Rating TC=125°C 1 10 µA µA ±100 µA 2 V 0.060 0.070 Ω Typ. Max. Unit Dynamic Parameter Forward Transconductance Test Conditions VDS = 25V Min. ID = 8A Input Capacitance VDS = 15V, f = 1MHz, VGS = 0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =30 ID = 16A VGS =10V Figure 14 on page 7 6 S 400 103 41.5 pF pF pF 14.1 2.8 5.4 nC nC nC Switching times Parameter Turn-on Delay Time Rise Time Off voltage Rise Time FallTime Test Conditions VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V Min. Typ. Max. Unit 4 15 ns ns 16 5.5 ns ns Figure 13 on page 7 VDD = 30V, ID = 8A, RG = 4.7Ω, VGS = 10V Figure 15 on page 7 3/11 STD16NF06 2 Electrical characteristics Table 6. Source drain diode Symbol Parameter ISD ISDM Note 4 Source-drain Current Source-drain Current (pulsed) VSD Note 5 Forward on Voltage ISD = 8A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 16A, di/dt = 100A/µs, VDD = 20V, TJ =150°C trr Qrr IRRM Test Conditions 2 Garanted when external Rg=4.7 Ω and tf < tfmax. 3 Starting TJ = 25°C, ID = 19A, VDD = 18V 4 Pulse width limited by safe operating area 5 Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/11 Typ. VGS = 0 Figure 15 on page 7 Note: 1 Value limited by wire bonding Min. 49 78 3.2 Max. Unit 16 64 A A 1.5 V ns µC A STD16NF06 2.1 2 Electrical characteristics Electrical chraracteristics (curves) Figure 1. Safe Operating Area Figure 2. Thermal Impedance Figure 3. Output Characteristics Figure 4. Transfer Characteristics Figure 5. Transconductance Figure 6. Static Drain-Source on Resistance 5/11 STD16NF06 2 Electrical characteristics Figure 7. Gate Charge vs Gate-Source Voltage Figure 8. Figure 9. Normalized Gate Threshold Voltage Figure 10. Normalized on Resistance vs vs Temperature Temperature Figure 11. Source-drain Diode Forward Characteristics 6/11 Capacitance Variations Figure 12. Normalized Breakdown Voltage vs Temperature STD16NF06 3 3 Test circuits Test circuits Figure 13. Switching Times Test Circuit For Resistive Load Figure 14. Gate Charge Test Circuit Figure 15. Test Circuit For Inductive Load Switching and Diode Recovery Times Figure 17. Unclamped Inductive Load Test Circuit Figure 16. Unclamped Inductive Waveform 7/11 4 Package mechanical data 4 STD16NF06 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STD16NF06 4 Package mechanical data TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = 1 = G 2 = = = = E B2 3 B DETAIL "A" L4 0068772-B 9/11 STD16NF06 5 Revision History 5 Revision History Date Revision 10-Jan-2006 1 10/11 Description of changes First release STD16NF06 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11