STMICROELECTRONICS STW38NB20

STW38NB20
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
PRELIMINARY DATA
TYPE
STW38NB20
■
■
■
■
■
■
■
V DSS
R DS(on)
ID
200 V
< 0.065 Ω
38 A
TYPICAL RDS(on) = 0.052 Ω
EXTREMELY HIGH dv/dt CAPABILITY
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
VDGR
V GS
Value
Unit
Drain-source Voltage (V GS = 0)
Parameter
200
V
Drain- gate Voltage (R GS = 20 kΩ)
200
V
± 30
V
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
38
A
ID
Drain Current (continuous) at T c = 100 o C
24
A
152
A
Total Dissipation at T c = 25 C
180
W
Derating Factor
1.44
W/ o C
Peak Diode Recovery voltage slope
5.5
V/ns
I DM (•)
P tot
dv/dt (1)
T stg
Tj
Drain Current (pulsed)
o
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
January 1998
-65 to 150
o
C
150
o
C
(1) ISD ≤38 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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STW38NB20
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
Tl
o
0.69
30
0.1
300
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ < 1%)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , VDD = 50 V)
Max Value
Unit
38
A
550
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
I DSS
I GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Gate-body Leakage
Current (V DS = 0)
Typ.
Max.
200
VGS = 0
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
o
C
Min.
Unit
V
T c = 125
V GS = ± 30 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
V DS = VGS
R DS(on)
Static Drain-source On
Resistance
V GS = 10 V
ID(on)
Min.
Typ.
Max.
Unit
3
4
5
V
0.052
0.065
Ω
I D = 19 A
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
38
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 19 A
V GS = 0
Min.
Typ.
10
19
2800
750
100
Max.
Unit
S
3800
1000
140
pF
pF
pF
STW38NB20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Typ.
Max.
Unit
t d(on)
tr
Turn-on Time
Rise Time
Parameter
V DD = 100 V
I D = 19 A
R G = 4.7 Ω
V GS = 10 V
(see test circuit, figure 3)
Test Conditions
Min.
35
40
47
55
ns
ns
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 160 V ID = 38 A V GS = 10 V
70
22
35
95
nC
nC
nC
Typ.
Max.
Unit
18
22
42
24
30
57
ns
ns
ns
Typ.
Max.
Unit
38
152
A
A
SWITCHING OFF
Symbol
t r(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V DD = 160 V
R G = 4.7 Ω
Min.
I D = 38 A
V GS = 10 V
SOURCE DRAIN DIODE
Symbol
I SD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Conditions
Min.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 38 A
I SD = 38 A
V DD = 50 V
VGS = 0
di/dt = 100 A/µs
o
T j = 150 C
1.5
V
350
ns
2.3
µC
13
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STW38NB20
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
L4
34.6
1.362
L5
5.5
0.217
0.582
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
4/5
STW38NB20
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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