STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 3 1 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (•) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 1000 1000 ± 30 4.2 2.6 16.8 125 1 -65 to 150 150 Unit V V V A A A W W/ o C o C o C (•) Pulse width limited by safe operating area October 1997 1/5 STP4NA100 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o 1 62.5 0.5 300 C/W oC/W o C/W o C Max Value Unit AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 4.2 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 50 V) 160 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VGS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating I GSS Gate-body Leakage V GS = ± 30 V Current (V DS = 0) Min. Typ. Max. 1000 Unit V T c = 100 o C 50 250 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions ID = 250 µA V GS(th) Gate Threshold Voltage V DS = VGS R DS(on) Static Drain-source On V GS = 10V ID = 2.1 A Resistance ID(on) Min. Typ. Max. Unit 2.25 3 3.75 V 3 3.5 Ω On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance ReverseTransfer Capacitance V DS = 25 V f = 1 MHz I D =2.1 A V GS = 0 Min. Typ. Max. Unit 2 5.5 S 1650 127 31 pF pF pF STP4NA100 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. t d(on) tr Turn-on Time Rise Time V DD = 500 V ID = 2.1 A R G = 4.7 Ω V GS = 10 V Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 800 V V I D = 4.2 A VGS = 10 Typ. Max. Unit 14 12 ns ns 59 9.4 26.5 nC nC nC SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 800 V I D = 4.2 A R G = 47 Ω VGS = 10 V (see test circuit, figure 5) Typ. Max. Unit ns ns ns 94 30 142 SOURCE DRAIN DIODE Symbol Parameter I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage t rr Q rr I RRM Reverse Time Reverse Charge Reverse Current Test Conditions I SD = 4.2 A Typ. V GS = 0 Recovery I SD = 4.2 A di/dt = 100 A/µs o V DD = 100 V T j = 150 C Recovery (see circuit, figure 5) Recovery Min. Max. Unit 4.2 16.8 A A 1.6 V 1000 ns 14 µC 28 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STP4NA100 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L7 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/5 L4 P011C STP4NA100 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5