STP3NB90 STP3NB90FP ® N - CHANNEL 900V - 4 Ω - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET TARGET DATA TYPE STP3NB90 STP3NB90FP ■ ■ ■ ■ ■ V DSS R DS(on) ID 900 V 900 V < 4.2 Ω < 4.2 Ω 3.5 A 3.5 A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 1 3 2 1 TO-220 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ■ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP4NB90 V DS V DGR V GS Unit STP4NB90FP Drain-source Voltage (V GS = 0) 900 Drain- gate Voltage (R GS = 20 kΩ) Gate-source Voltage 900 V V ± 30 V ID Drain Current (continuous) at T c = 25 o C 3.5 3.5(**) A ID Drain Current (continuous) at T c = 100 o C 2.2 1.26(*) A Drain Current (pulsed) 14 14 A IDM o Total Dissipation at T c = 25 C 100 35 W Derating Factor 0.8 0.28 W/ o C Peak Diode Recovery voltage slope 4.5 4.5 V/ns VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature P tot dv/dt( 1 ) Tj Max. Operating Junction Temperature (*) Pulse width limited by safe operating area October 1998 2000 V -65 to 150 o C 150 o C (1) ISD ≤ 3.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (**) Limited only TJMAX 1/6 STP3NB90/FP THERMAL DATA R thj-case Thermal Resistance Junction-case R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose Max TO-220 TO220-FP 1.25 3.57 62.5 0.5 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Parameter 3.5 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) 233 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (V DS = 0) Typ. Max. 900 V GS = 0 I DSS Min. Unit V T c = 125 o C V GS = ± 30 V 1 50 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V I D = 1.7 A I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 3 4 5 V 4 4.2 Ω 3.5 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/6 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 1.7 A V GS = 0 Min. Typ. 1.6 Max. Unit S 700 90 7 pF pF pF STP3NB90/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 450 V R G = 4.7 Ω ID = 1.7 A VGS = 10 V Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 720 V ID = 3.5 A V GS = 10 V Min. Typ. Max. Unit TBD ns ns 21 8 9 nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. Typ. Max. TBD V DD = 720V I D = 3.5 A R G = 4.7 Ω V GS = 10 V Unit ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 3.5 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3.5 A di/dt = 100 A/µs V DD = 100 V T j = 150 o C t rr Q rr I RRM Min. Typ. V GS = 0 TBD Max. Unit 3.5 14 A A 1.6 V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STP3NB90/FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/6 L4 P011C STP3NB90/FP TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 5/6 STP3NB90/FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 6/6