STW7NA100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS(on) ID STW7NA100 STH7NA100FI 1000 V 1000 V < 1.7 Ω < 1.7 Ω 7A 4.3 A ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE 3 3 2 2 1 1 TO-247 ISOWATT218 ■ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STW7NA100 V DS VDGR V GS 1000 Drain- gate Voltage (R GS = 20 kΩ) 1000 V Gate-source Voltage ± 30 V Drain Current (continuous) at T c = 25 o C ID o P tot V ISO T stg Tj STH7NA100FI Drain-source Voltage (V GS = 0) ID I DM (•) Unit Drain Current (continuous) at T c = 100 C Drain Current (pulsed) V 7 4.3 A 4.4 2.7 A 28 28 A Total Dissipation at T c = 25 o C 190 70 W Derating Factor 1.52 0.56 W/ o C 4000 Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area March 1998 1/6 STW7NA100-STH7NA100FI THERMAL DATA R thj-case Thermal Resistance Junction-case Max R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-247 ISOWATT218 0.65 1.78 30 0.1 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) Max Value Unit 7 A 800 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating I GSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 1000 VGS = 0 Unit V T c = 100 o C V GS = ± 30 V 50 250 µA µA ±100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V I D = 3.5 A ID(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 2.25 3 3.75 V 1.45 1.7 Ω Ω 7 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/6 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 3.5 A V GS = 0 Min. Typ. 5 7 3170 270 76 Max. Unit S 4100 351 99 pF pF pF STW7NA100-STH7NA100FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 500 V 3.5 A R G = 4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 800 V Min. ID = Typ. Max. Unit 28 19 40 27 ns ns 125 17 58 150 nC nC nC Typ. Max. Unit 35 15 55 50 21 77 ns ns ns Typ. Max. Unit 7 28 A A V GS = 10 V ID = 7 A V GS = 10 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 800 V R G = 4.7 Ω Min. I D = 7A V GS = 10 V SOURCE DRAIN DIODE Symbol I SD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Conditions Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 7 A I SD = 7 A V DD = 100 V V GS = 0 di/dt = 100 A/µs o T j = 150 C 1.6 V 835 ns 14 µC 33 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STW7NA100-STH7NA100FI TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 4/6 STW7NA100-STH7NA100FI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 5/6 STW7NA100-STH7NA100FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6