STP22NE03L N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE STP22NE03L ■ ■ ■ ■ ■ V DSS R DS(on) ID 30 V < 0.05 Ω 22 A TYPICAL RDS(on) = 0.034 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION 3 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. ) ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Parameter Value Unit Drain-source Voltage (V GS = 0) 30 V Drain- gate Voltage (R GS = 20 kΩ) 30 V ± 15 V 22 A Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C ID o IDM (•) P tot dv/dt T stg Tj Drain Current (continuous) at T c = 100 C 16 A Drain Current (pulsed) 88 A Total Dissipation at T c = 25 o C 60 W Derating Factor 0.4 W/ o C 6 V/ns Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area January 1998 -65 to 175 o C 175 o C (1) ISD ≤22 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/5 STP22NE03L THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o 2.5 62.5 0.5 300 C/W oC/W o C/W o C Max Value Unit 22 A TBD mJ AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 15 V) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating I GSS Gate-body Leakage Current (V DS = 0) Typ. Max. 30 VGS = 0 I DSS Min. Unit V T c =125 o C V GS = ± 15 V 1 10 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V V GS = 5V I D = 11 A I D = 11 A ID(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 1 1.7 2.5 V 0.034 0.049 0.05 0.06 Ω 22 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =11 A V GS = 0 Min. Typ. 7 13 680 160 60 Max. Unit S 950 220 85 pF pF pF STP22NE03L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 15 V R G =4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 24 V Min. I D = 11 A V GS = 5 V I D = 22 A VGS = 5 V Typ. Max. Unit 15 70 20 100 ns ns 13 6 6 18 nC nC nC Typ. Max. Unit 13 33 55 18 46 77 ns ns ns Typ. Max. Unit 22 88 A A SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 24 V I D = 22 A R G =4.7 Ω V GS = 5 V SOURCE DRAIN DIODE Symbol I SD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Conditions Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 22 A I SD = 22 A V DD = 15 V VGS = 0 di/dt = 100 A/µs o T j = 150 C 1.5 V 40 ns 44 µC 2.2 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STP22NE03L TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/5 L4 P011C STP22NE03L Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5