TIP140/141/142 TIP145/146/147 ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 TO-218 DESCRIPTION The TIP140, TIP141 and TIP142 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration, mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TIP147 respectively. INTERNAL SCHEMATIC DIAGRAM R2 Typ. = 150 Ω R1 Typ. = 5 KΩ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP140 TIP141 TIP142 PNP TIP145 TIP146 TIP147 V CBO Collector-Base Voltage (I E = 0) 60 80 100 V V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V V EBO Emitter-Base Voltage (I C = 0) IC I CM IB P tot T stg Tj 5 V Collector Current 10 A Collector Peak Current 20 A Base Current 0.5 A Total Dissipation at T case ≤ 25 o C Storage Temperature 125 W Max. Operating Junction Temperature -65 to 150 o C 150 o C For PNP types voltage and current values are negative. March 2000 1/4 TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit I CBO Collector Cut-off Current (I E = 0) for TIP140/145 for TIP141/146 for TIP142/147 V CB = 60 V V CB = 80 V V CB = 100 V 1 1 1 mA mA mA I CEO Collector Cut-off Current (I B = 0) for TIP140/145 for TIP141/146 for TIP142/147 V CE = 30 V V CE = 40 V V CE = 50 V 2 2 2 mA mA mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA VCEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) I C = 30 mA for TIP140/145 for TIP141/146 for TIP142/147 Collector-Emitter Saturation Voltage IC = 5 A I C = 10 A I B = 10 mA I B = 40 mA V BE(on) * Base-Emitter Voltage I C = 10 A V CE = 4 V DC Current Gain IC = 5 A I C = 10 A V CE = 4 V V CE = 4 V RESISTIVE LOAD Turn-on Time Turn-off Time I C = 10 A I B2 = -40 mA I B1 = 40 mA RL = 3 Ω h FE * t on t off For PNP types voltage and current values are negative. ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % V V V 60 80 100 V CE(sat) * 2/4 Min. 2 3 V V 3 V 1000 500 0.9 4 µs µs TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147 TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 31 0.163 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 1 2 3 P025A 3/4 TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4