TIP102 TIP105 TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 1 DESCRIPTION The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP107. Also TIP105 is a PNP type. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R2 Typ. = 150 Ω R1 Typ. = 5 KΩ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN PNP Un it TIP102 TIP105 TIP107 V CBO Collector-Base Voltage (IE = 0) 60 100 V V CEO Collector-Emitter Voltage (IB = 0) 60 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 8 A ICM Collector Peak Current 15 A IB P tot Ts tg Tj Base Current T otal Dissipation at Tc ase ≤ 25 o C T amb ≤ 25 oC Storage Temperature Max. Operating Junction Temperature 1 A 80 2 W W -65 to 150 o C 150 o C * For PNP types voltage and current values are negative. October 1999 1/4 TIP102 / TIP105 / TIP107 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 1.56 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Max. Unit I CEO Collector Cut-off Current (IB = 0) Parameter for TIP105 for T IP102/TIP107 V CE = 30 V V CE = 50 V 50 50 µA µA I CBO Collector Cut-off Current (IE = 0) for TIP105 for T IP102/TIP107 V CB = 60 V V CB = 100 V 50 50 µA µA IEBO Emitter Cut-off Current (I C = 0) V EB = 5 V 8 mA V CEO(sus ) * Collector-Emitt er Sustaining Voltage (I B = 0) VCE(sat )* Test Con ditions I C = 30 mA for TIP105 for T IP102/TIP107 Typ. 60 100 V V Collector-Emitt er Saturation Voltage IC = 3 A IC = 8 A I B = 6 mA I B = 80 mA 2 2.5 V V V BE * Base-Emitter Voltage IC = 8 A V CE = 4 V 2.8 V h F E* DC Current G ain IC = 3 A IC = 8 A V CE = 4 V V CE = 4 V VF * Forward Voltage of Commutation Diode (I B = 0) I F = - I C = 10 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area 2/4 Min. 1000 200 20000 2.8 V TIP102 / TIP105 / TIP107 TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 1.27 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 0.551 L2 L4 16.4 13.0 0.645 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 TIP102 / TIP105 / TIP107 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 4/4