STMICROELECTRONICS STX83003

STX83003
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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ST83003 SILICON IN TO-92 PACKAGE
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS:
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
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DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STX83003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STX93003, its
complementary PNP transistor.
TO-92
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CES
V CEO
V EBO
IC
I CM
IB
I BM
P tot
T stg
Tj
Parameter
Collector-Emitter Voltage (V BE = 0)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage
o
(I C = 0, I B = 0.5 A, t p < 10µs, T j < 150 C)
Collector Current
Collector Peak Current (t p < 5 ms)
Base Current
Base Peak Current (t p < 5 ms)
Total Dissipation at T C = 25 o C
Storage Temperature
Max. Operating Junction Temperature
October 2002
Value
700
400
V (BR)EBO
Unit
V
V
V
1
3
0.5
1.5
1.5
-65 to 150
150
A
A
A
A
W
o
C
o
C
1/7
STX83003
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
83.3
200
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CES
V (BR)EBO
Parameter
Test Conditions
Min.
Collector Cut-off
Current (V BE = 0)
V CE = 700V
V CE = 700V
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 10 mA
12
I C = 10 mA
L = 25 mH
400
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Typ.
T j = 125 o C
Max.
Unit
1
5
mA
mA
18
V
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 0.5 A
I C = 0.35 A
I B = 0.1 A
I B = 50 mA
0.5
1
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 0.5 A
I B = 0.1 A
1
V
DC Current Gain
I C = 10 mA
I C = 0.35 A
IC = 1 A
V CE = 5 V
V CE = 5 V
V CE = 5 V
10
16
4
25
32
V CC = 125 V
I B2 = -70 mA
(see figure 2)
1.5
100
2.2
0.2
2.9
h FE ∗
tr
ts
tf
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I C = 0.35 A
I B1 = 70 mA
T p ≥ 25 µs
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
I C = 0.5 A
V BE(off) = -5 V
V clamp = 300 V
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.
2/7
I B1 = 0.1 A
L = 10 mH
(see figure 1)
450
90
ns
µs
µs
ns
ns
STX83003
Safe Operating Area
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
STX83003
Resistive Load Fall Time
Resistive Load Storage Time
Inductive Load Fall Time
Inductive Load Storage Time
Reverse Biased SOA
4/7
STX83003
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
STX83003
TO-92 MECHANICAL DATA
mm
DIM.
MIN.
6/7
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.32
4.95
0.170
0.195
b
0.36
0.51
0.014
0.020
D
4.45
4.95
0.175
0.194
E
3.30
3.94
0.130
0.155
e
2.41
2.67
0.095
0.105
e1
1.14
1.40
0.045
0.055
L
12.70
15.49
0.500
0.609
R
2.16
2.41
0.085
0.094
S1
1.14
1.52
0.045
0.059
W
0.41
0.56
0.016
0.022
V
4 degree
6 degree
4 degree
6 degree
STX83003
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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