BUL128 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 4 A Collector Peak Current (t p < 5 ms) 8 A Base Current 2 A I BM Base Peak Current (t p < 5 ms) 4 A P tot Total Dissipation at T c = 25 o C T stg Storage Temperature IC I CM IB Tj Max. Operating Junction Temperature November 2001 70 W -65 to 150 o C 150 o C 1/7 BUL128 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.78 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = -1.5 V) V CE = 700 V V CE = 700 V V EBO Emitter-Base Voltage (I C = 0) I E = 10 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I CEO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I C = 100 mA Collector Cut-Off Current (I B = 0) V CE = 400 V Collector-Emitter Saturation Voltage IC IC IC IC = = = = 0.5 A 1A 2.5 A 4A Min. Typ. T j = 125 o C L = 25 mH IB IB IB IB = = = = I C = 0.5 A IC = 1 A I C = 2.5 A I B = 0.1 A I B = 0.2 A I B = 0.5 A DC Current Gain I C = 10 mA IC = 2 A Group A Group B V CE = 5 V V CE = 5 V RESISTIVE LOAD Storage Time Fall Time V CC = 125 V I B1 = 0.4 A T p = 30 µs IC = 2 A I B2 = -0.4 A (see fig.2) ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE(off) = -5 V V clamp = 200 V I B1 = 0.4 A R BB = 0 Ω (see fig.1) µA µA V 400 V 250 µA 0.7 1 1.5 V V V V 1.1 1.2 1.3 V V V 0.5 10 14 25 ts tf Unit 100 500 9 0.1 A 0.2 A 0.5 A 1A Base-Emitter Saturation Voltage Max. 28 40 0.2 3 0.4 µs µs 0.6 0.1 1 0.2 µs µs 1.5 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. 2/7 BUL128 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BUL128 Inductive Load Fall Time Inductive Load Storage Time Resistive Load Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BUL128 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BUL128 TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 6/7 BUL128 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7