BUV28 ® NPN SWITCHING TRANSISTOR ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON APPLICATIONS: SWITCHING REGULATORS ■ SOLENOID / RELAY DRIVERS ■ DESCRIPTION High speed transistor suited for low voltage applications. High frequency and efficiency converters switching regulators motor control. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 400 V V CEO Collector-Emitter Voltage (I B = 0) 200 V V EBO Emitter-Base Voltage (I C = 0) 7 V IC I CM IB Collector Current 10 A Collector Peak Current (t p < 5ms) 15 A 2 A Base Current I BM Base Peak Current (t p < 5ms) 4 A P tot Total Dissipation at T c < 25 o C 85 W P tot Total Dissipation at T c < 60 o C 65 T stg Tj March 2003 Storage Temperature Max. Operating Junction Temperature W -65 to +175 o C 175 o C 1/4 BUV28 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.76 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. o Max. Unit I CER Collector Cut-off Current (R BE = 50Ω) V CE = 400V T c = 125 C 3 mA I CEX Collector Cut-off Current (V BE = -1.5V) V CE = 400V T c = 125 o C 1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 0.2 A 200 Emitter-Base Voltage (I C = 0) I E = 50 mA 7 V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 3 A IC = 6 A V BE(sat) ∗ Base-Emitter Saturation Voltage V EBO t on ts tf RESISTIVE LOAD Storage Time Fall Time Turn-on Time ts tf INDUCTIVE LOAD Storage Time Fall Time V 30 V I B = 0.3 A I B = 0.6 A 0.7 1.5 V V IC = 6 A I B = 0.6 A 2 V V CC = 150 V V BE = - 6 V R BB = 5 Ω IC = 6 A I B1 = 0.6 A I B2 = - 1.2 A 1 1.5 0.25 µs µs µs V CC = 150 V I B1 = 0.6 A L B = 3 µH IC = 6 A V BE = - 5 V T c = 125 o C 3 0.2 µs µs ∗ Pulsed: Pulse duration = 300µs, duty cycle = 2 % 2/4 Typ. BUV28 TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 3/4 BUV28 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4