T810-xxxB T835-xxxB ® HIGH PERFORMANCE TRIACS FEATURES ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA HIGH COMMUTATION TECHNOLOGY HIGH ITSM CAPABILITY A2 DESCRIPTION The T810-xxxB and T835-xxxB series are using high performance TOPGLASS PNPN technology. These devices are intented for AC control applications, using surface mount technology where high commutating and surge performances are required (like power tools, Solid State Relay). G A2 A1 DPAK (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM 2 I t dI/dt Tstg Tj T Parameter Unit RMS on-state current (360° conduction angle) Tc =110 °C 8 A Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 8.3 ms 85 A tp = 10 ms 80 I t value for fusing tp = 10 ms 32 A2s Critical rate of rise of on-state current IG = 50mA diG/dt = 0.1A/µs Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 2 Storage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C 260 °C T810-/T835- Unit Maximum temperature for soldering during 10 s Symbol VDRM VRRM Value Parameter Repetitive peak off-state voltage Tj = 125 °C May 1998 Ed : 1A 400B 600B 400 600 V 1/5 T810-xxxB / T835-xxxB THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-c) Junction to case for DC 2.1 °C/W Rth (j-c) Junction to case for AC 360° conduction angle ( F= 50 Hz) 1.6 °C/W Rth (j-a) Junction to ambient (S = 0.5 cm2) 70 °C/W Suffix Unit GATE CHARACTERISTICS (maximum values) PG(AV) = 1 W PGM= 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant T810 T835 10 35 IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 1.3 V VGD VD=VDRM RL=3.3kΩ Tj=125°C I-II-III MIN 0.2 V IG=1.2 IGT Tj=25°C I-II-III MAX 25 60 mA IH * IT= 100mA gate open Tj=25°C MAX 15 35 mA VTM * ITM= 11A tp= 380µs Tj=25°C MAX 1.5 V VDRM Rated VRRM Rated Tj=25°C MAX 10 µA Tj=125°C MAX 2 mA Linear slope up to VD=67%VDRM gate open Tj=125°C MIN 50 500 V/µs (dI/dt)c * (dV/dt)c = 0.1V/µs Tj=125°C MIN 5.4 9 A/ms (dV/dt)c = 15V/µs Tj=125°C MIN 2.7 4.5 A/ms IL IDRM IRRM dV/dt * * For either polarity of electrode A2 voltage with reference to electrode A1. ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment T 8 10 - 600 TRIAC VOLTAGE PACKAGE B = DPAK CURRENT SENSITIVITY 2/5 B mA T810-xxxB / T835-xxxB Fig 1a: Maximum power dissipation versus RMS on-state current (T810 only). P(W) 10 Fig 1b: Maximum power dissipation versus RMS on-state current. (T835 only) P(W) 10 α 8 α 8 α α 6 6 α 4 180° α α α α 4 180° 2 α α α 2 IT(RMS)(A) IT(RMS)(A) 0 0 1 2 3 4 5 6 7 8 Fig 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact. 110 Rth=5°C/W Rth=10 °C/W 8 Rth=0°C/W 115 6 Rth=15 °C/W 4 120 2 α Tamb(°C) 0 0 25 50 75 100 125 0 0 1 2 3 4 5 6 7 8 Fig 3: RMS on-state current versus ambient temperature. IT(RMS)(A) Tcase (°C) P(W) 10 α α 125 Fig 4: Relative variation of thermal impedance junction to case versus pulse duration. K=[Zth(j-c)/Rth(j-c)] 9 8 7 6 5 4 3 2 1 0 α Tamb(°C) 0 50 75 100 125 Fig 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values). 2.5 1.0 25 IGT,IH[Tj]/IGT,IH[Tj=25°C] 2.0 0.5 IGT 1.5 IH 1.0 0.2 0.5 Tj(°C) tp(s) 0.1 1E-3 1E-2 1E-1 1E+0 0.0 -40 -20 0 20 40 60 80 100 120 3/5 140 T810-xxxB / T835-xxxB Fig 6: Non repetitive surge peak on-state current versus number of cycles. 80 Fig 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. ITSM(A),I²t(A²s) ITSM(A) 500 Tj initial=25°C F=50Hz 70 Tj initial=25°C 60 ITSM 50 100 40 30 I²t 20 10 0 Number of cycles 1 10 100 tp(ms) 1000 Fig 8: On-state characteristics (maximum values). 10 10.0 100 Tj max.: Vto=0.8V Rt=60m Ω Tj=Tj max. 2 5 10 Fig 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). ITM(A) 100.0 1 Rth(j-a) (°C/W) 80 60 Tj=25°C 40 1.0 20 S(Cu) (cm²) VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4/5 0 0 2 4 6 8 10 12 14 16 18 20 T810-xxxB / T835-xxxB PACKAGE MECHANICAL DATA DPAK Plastic REF. E A B2 C2 L2 D H L4 A1 B G C A2 0.60 MIN. V2 FOOT PRINT (millimeters) A A1 A2 B B2 C C2 D E G H L2 L4 V2 DIMENSIONS Millimeters Inches Min. Typ. Max Min. Typ. Max. 2.20 2.40 0.086 0.094 0.90 1.10 0.035 0.043 0.03 0.23 0.001 0.009 0.64 0.90 0.025 0.035 5.20 5.40 0.204 0.212 0.45 0.60 0.017 0.023 0.48 0.60 0.018 0.023 6.00 6.20 0.236 0.244 6.40 6.60 0.251 0.259 4.40 4.60 0.173 0.181 9.35 10.10 0.368 0.397 0.80 0.031 0.60 1.00 0.023 0.039 0° 8° 0° 8° WEIGHT : 0.30g 6.7 MARKING TYPE MARKING T810-400B T8 1040 6.7 T810-600B T8 1060 3 T835-400B T8 3540 T835-600B T8 3560 6.7 1.6 1.6 2.3 2.3 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5