TN1625-G SCR FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY A DESCRIPTION A The TN1625 series of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This SCR is designed for power supplies up to 400Hz on resistive or inductive load. G K D2PAK ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conductionangle) Tc= 110°C 16 A IT(AV) Average on-state current (180° conductionangle) Tc= 110°C 10 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms 199 A (Tj initial = 25°C) tp = 10 ms 190 I2t Value for fusing tp = 10ms 180 A2s I2 t dI/dt Critical rate of rise of on-state current IG = 100 mA dIG /dt = 1 A/µs. 100 A/µs T stg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C 260 °C Tl Maximum temperature for soldering during 10 s Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 125°C January 1998 - Ed: 4 TN1625600G 800G 600 800 Unit V 1/5 TN1625-G THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient (S=1cm2) 45 °C/W Rth(j-c) Junction to case for D.C 1.1 °C/W GATE CHARACTERISTICS PG (AV)= 1W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) VRGM = 5V ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD = 12V (DC) RL= 33Ω Tj= 25°C Type Value Unit MIN 3 mA MAX 25 VGT VD = 12V (DC) RL= 33Ω Tj= 25°C MAX 1.3 V VGD VD = VDRM RL = 3.3kΩ Tj= 125°C MIN 0.2 V IH IT= 100mA Tj= 25°C MAX 40 mA IL IG = 1.2 IGT Tj= 25°C MAX 60 mA VTM ITM= 32A tp= 380µs Tj= 25°C MAX 1.5 V IDRM VD = VDRM Tj= 25°C MAX 5 µA IRRM VR = VRRM Tj= 125°C MAX 2 mA dV/dt VD=67%VDRM Gate open Tj= 125°C MIN 500 V/µs Gate open ORDERING INFORMATION TN Add ”-TR” suffix for Tape & Reel shipment 16 25 - 600 PACKAGES : G: D2PAK SCR CURRENT G SENSITIVITY 2/5 VOLTAGE TN1625-G Fig. 1: Maximum average power dissipation versus average on-state current . Fig. 2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase ) for different thermal resistances heatsink+contact. P(W) P(W) 16 16 α=180° 14 D.C. Rth=6°C/W α=120° Rth=0°C/W 110 α=60° 10 8 8 6 6 4 4 2 0 Rth=2°C/W 12 α=30° 10 Rth=4°C/W 14 α=90° 12 Tcase (°C) 115 120 α=180° 2 IT(AV)(A) Tamb(°C) 0 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 125 Fig. 3: Average and D.C. on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance versus pulse duration. IT(AV)(A) K=[Zth/Rth] 1.00 18 D.C. 16 Zth(j-c) 14 12 α=180° Zth(j-a) 10 0.10 8 6 4 2 0 Tcase( °C) 0 25 50 tp(s) 75 100 125 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger currentand holding current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. IGT,IH[Tj]/IGT,IH[Tj=25°C] ITSM(A) 2.5 200 2.0 IGT 1.5 1.0 Tj initial=25°C F=50Hz 160 120 IH 80 40 0.5 Number of cycles Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/5 TN1625-G Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. Fig. 8: On-state characteristics(maximum values). ITSM(A),I t(A s) ITM(A) 200 1000 Tj initial=25°C 500 100 Tj=Tj max. ITSM Tj max.: Vto=0.77V Rt=23mΩ 10 Tj=25°C It 200 VTM(V) tp(ms) 100 1 2 5 10 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxyprinted circuit board FR4, copper thickness: 35µm). 1 0 1 2 3 4 5 Fig. 10: Typical reflow soldering heat profile, either for mounting on FR4 or metal-backed boards. Rth(j-a) (°C/W) T (°C) 80 250 245°C 70 215°C 200 60 50 Epoxy FR4 board 150 40 100 30 20 10 0 Metal-backed board 50 S(Cu) (cm ) 0 4 8 12 16 20 24 t (s) 28 32 36 40 4/5 0 0 40 80 120 160 200 240 280 320 360 TN1625-G PACKAGE MECHANICAL DATA D2PAK REF. A E Min. Typ. Max. Min. Typ. Max. C2 L2 DIMENSIONS Millimeters Inches D L A 4.30 4.60 0.169 0.181 A1 A2 B 2.49 0.03 0.70 2.69 0.098 0.23 0.001 0.93 0.027 0.106 0.009 0.037 B2 L3 A1 B2 R C B G A2 2.0 MIN. FLAT ZONE V2 1.40 0.055 C C2 0.45 1.21 0.60 0.017 1.36 0.047 0.024 0.054 D 8.95 9.35 0.352 0.368 E G 10.00 4.88 10.28 0.393 5.28 0.192 0.405 0.208 L 15.00 15.85 0.590 0.624 L2 L3 1.27 1.40 1.40 0.050 1.75 0.055 0.055 0.069 R V2 0.40 0° 0.016 8° 0° 8° FOOT PRINT DIMENSIONS (in millimeters) 16.90 MARKING: TN1625 x00G 10.30 5.08 1.30 3.70 8.90 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorizedfor use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. 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