STMICROELECTRONICS T1650-600G

T1635-600G
T1650-600G
®
HIGH PERFORMANCE TRIAC
FEATURES
HIGH COMMUTATION PERFORMANCES
SNUBBERLESSTM TECHNOLOGY
HIGH NOISE IMMUNITY (dV/dt)
HIGH ITSM
A2
DESCRIPTION
A2
The T1635-600G and T1650-600G triacs are
using
high
performance
SNUBBERLESS
technology.
They are intended for AC control applications
using surface mount technology.
These devices are perfectly suited where high
commutation and surge performances are
required.
G
A1
D2PAK
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
600
V
IT(RMS)
RMS on-state current
(360° conduction angle)
Tc= 105°C
16
A
Non repetitive surge peak on-state current
(Tj initial = 25°C)
tp = 8.3ms
170
A
tp = 10 ms
160
I2t Value for fusing
tp = 10 ms
128
A2s
Critical rate of rise of on-state current
Repetitive
F = 50 Hz
20
A/µs
Non Repetitive
100
ITSM
I2t
dI/dt
IG = 500 mA
Tstg
Tj
T
dIG /dt = 1 A/µs.
Storage temperature range
Operating junction temperature range
Maximum temperature for soldering during 10s
May 1998 - Ed: 2A
- 40, + 150
- 40, + 125
°C
260
°C
1/5
T1635-600G / T1650-600G
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient (S=1cm2)
45
°C/W
Rth(j-c)
Junction to case for DC
1.6
°C/W
Rth(j-c)
Junction to case for AC 360° conduction angle (F=50Hz)
1.2
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs)
IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
Quadrant
VD=12V (DC) RL=33Ω
Tj= 25°C
I-II-III
T1635 T1650
Unit
2
mA
MIN
MAX
35
50
VGT
VD=12V (DC) RL=33Ω
Tj= 25°C
I-II-III
MAX
1.3
V
VGD
VD=VDRM RL=3.3kΩ
Tj= 125°C
I-II-III
MIN
0.2
V
IH *
IT= 100mA
Tj= 25°C
IL
IG = 1.2 IGT
Gate open
Tj = 25°C
MAX
35
50
mA
I-III
MAX
50
60
mA
II
MAX
80
120
VTM *
ITM= 22.5A tp= 380µs
Tj= 25°C
MAX
1.5
V
IDRM
VD = VDRM
Tj= 25°C
MAX
5
µA
IRRM
VR = VRRM
Tj= 125°C
MAX
2
mA
Linear slope up to VD=67%VDRM
Gate open
Tj= 125°C
MIN
500
1000
V/µs
Without snubber
Tj= 125°C
MIN
8.5
14
A/ms
dV/dt *
(dI/dt)c *
* For either polarity of electrode A2 voltage with reference to electrode A1.
ORDERING INFORMATION
Add "-TR" suffix for Tape & Reel shipment
T 16
35 - 600
PACKAGE :
G = D2PAK
TRIAC
CURRENT
2/5
G
SENSITIVITY
VOLTAGE
T1635-600G / T1650-600G
Fig 1: Maximum power dissipation versus RMS
on-state current.
Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink+contact.
P(W)
P(W)
20
20
Rth=2°C/W
Rth=4°C/W
α=180°
Rth=1°C/W Rth=0°C/W
105
α=120°
15
Tcase (°C)
15
110
α=90°
10
5
0
10
α=60°
115
5
α=30°
IT(RMS)(A)
0
120
α=180°
2
4
6
8
10
12
14
16
0
0
20
Tamb(°C)
40
60
80
100
120
140
125
Fig. 3: RMS on-state current versus case temperature.
Fig. 4: Relative variation of thermal impedance
versus pulse duration.
IT(RMS)(A)
K=[Zth/Rth]
18
16
14
12
10
8
6
4
2
0
1.00
α=180°
Zth(j-c)
Zth(j-a)
0.10
Tcase(°C)
0
25
50
tp(s)
75
100
125
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig. 5: Relative variation of gate trigger current and
holding current versus junction temperature (typical values).
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
IGT,IH[Tj]/IGT,IH[Tj=25°C]
ITSM(A)
2.5
160
2.0
Tj initial=25°C
F=50Hz
140
IGT
120
100
1.5
80
1.0
IH
60
40
0.5
20
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100 120 140
0
Number of cycles
1
10
100
1000
3/5
T1635-600G / T1650-600G
Fig. 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t.
Fig. 8: On-state characteristics (maximum values).
ITM(A)
ITSM(A),I²t(A²s)
200
1000
Tj max.:
Vto=0.77V
Rt=30 mΩ
100
Tj initial=25°C
500
Tj=Tj max.
ITSM
10
Tj=25°C
200
I²t
100
tp(ms)
1
2
5
10
Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35µm).
VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 10: Typical reflow soldering heat profile, either
for mounting on FR4 or metal-backed boards.
Rth(j-a) (°C/W)
T (°C)
80
250
245°C
70
215°C
200
60
50
150
Epoxy FR4
board
40
100
30
20
10
0
Metal-backed
board
50
S(Cu) (cm²)
0
4/5
4
8
12
16
20
24
t (s)
28
32
36
40
0
0
40
80
120
160 200 240 280 320 360
T1635-600G / T1650-600G
PACKAGE MECHANICAL DATA
D2PAK
DIMENSIONS
REF.
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
2.0 MIN.
FLAT ZONE
V2
A
4.30
4.60 0.169
0.181
A1
2.49
2.69 0.098
0.106
A2
0.03
0.23 0.001
0.009
B
0.70
0.93 0.027
0.037
B2
C
1.25 1.40
0.048 0.055
0.45
0.60 0.017
0.024
C2
1.21
1.36 0.047
0.054
D
8.95
9.35 0.352
0.368
E
10.00
10.28 0.393
0.405
G
4.88
5.28 0.192
0.208
L
15.00
15.85 0.590
0.624
L2
1.27
1.40 0.050
0.055
L3
1.40
R
FOOT PRINT DIMENSIONS (in millimeters)
1.75 0.055
0.40
V2
0°
0.069
0.016
8°
0°
8°
MARKING
16.90
10.30
Inches
Min. Typ. Max. Min. Typ. Max.
A
E
Millimeters
5.08
TYPE
MARKING
T1635-600G
T1635
600G
T1650-600G
T1650
600G
1.30
3.70
8.90
PACKING
Tube : 50 units
Tape and reel : 500 units
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
© 1998 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The
Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5