TN805/TN815-B ® SCR’s FEATURES A ITRMS = 8 A VDRM = 400 V to 800 V IGT ≤ 5 mA and 15 mA DESCRIPTION G A The TN805/TN815-B serie of Silicon Controlled Rectifiers uses a high performance TOPGLASS PNPN technology. These parts are intended for general purpose applications using mount technology. K DPAK ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tc= 105°C 8 A IT(AV) Mean on-state current (180° conduction angle) Tc= 105°C 5 A ITSM Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 8.3 ms 73 A tp = 10 ms 70 tp = 10ms 24.5 A2s I2t I2t Value for fusing dI/dt Critical rate of rise of on-state current dIG /dt = 1 A/µs. IG = 100 mA 100 A/µs Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C 260 °C Tl Maximum lead temperature for soldering during 10s Symbol VDRM VRRM TN805 or TN815 Parameter Repetitive peak-off voltage Tj = 125°C August 1998 - Ed: 1A Unit 400B 600B 700B 800B 400 600 700 800 V 1/5 TN805/TN815-B THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient (S=0.5cm2) 70 °C/W Rth(j-c) Junction to case for D.C 2.5 °C/W GATE CHARACTERISTICS PG (AV)= 1W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) VRGM = 5 V ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Type Unit TN805 TN815 5 15 VD = 12V (DC) RL= 33Ω Tj= 25°C MAX VGT VD = 12V (DC) RL= 33Ω Tj= 25°C MAX 1.5 V VGD VD = VDRM RL = 3.3kΩ Tj= 125°C MIN 0.2 V tgt VD = VDRM IG = 40mA Tj= 25°C TYP 2 µs IH IT= 150mA Tj= 25°C MAX 25 30 mA IL IG = 1.2 IGT Tj= 25°C MAX 25 30 mA VTM ITM= 16A tp= 380µs Tj= 25°C MAX 1.6 V IDRM VDRM Rated Tj= 25°C MAX 10 µA IRRM VRRM Rated Tj = 125°C MAX 2 mA dV/dt Linear slope up to VD=67%VDRM Gate open Tj= 125°C MIN ITM = 3 x IT(AV) dIG/dt = 0.5A/us Gate open 50 150 ORDERING INFORMATION TN 8 05 - 600 CURRENT B PACKAGES : B: DPAK SCR 2/5 µA IGT SENSITIVITY VDRM / VRRM V/µs TN805/815-B Fig. 1: Maximum average power dissipation versus average on-state current . Fig. 2 : Correlation between maximum average power dissipation and maximum allowable temperatures (T amb and T case) for different thermal resistances heatsink+contact. P(W) 8 P(W) α = 180° 7 6 D.C. Rth=0°C/W 6 α = 30° 110 5 4 4 3 3 115 Rth=37°C/W 360° 2 1 0 105 α = 180° 7 α = 60° 5 Tcase (°C) 8 α = 120° α = 90° IT(av)(A) 0 1 2 3 1 α 4 5 120 2 0 6 7 Fig. 3-1: Average and D.C. on-state current versus case temperature. Tamb(°C) 0 Fig. 3-2: Average and D.C. on-state current versus case temperature. IT(av)(A) IT(av)(A) 10 D.C. 8 6 α = 180° 4 2 Tcase(°C) 0 0 125 10 20 30 40 50 60 70 80 90 100 110 120 130 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 4-1: Relative variation of thermal impedance versus pulse duration. 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 D.C. α = 180° Tamb(°C) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 4-2: Relative variation of thermal impedance versus pulse duration. K=[Zth(j-a)/Rth(j-a)] K=[Zth(j-c)/Rth(j-c)] 1.00 1.0 0.5 0.10 0.2 tp(s) 0.1 1E-3 1E-2 tp(s) 1E-1 1E+0 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 3/5 TN805/TN815-B Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. ITSM(A) Igt,IH[Tj]/Ig,IH[Tj=25°C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 80 Tj initial=25°C F=50Hz 70 Igt 60 50 IH 40 30 20 10 Tj(°C) -20 0 20 40 60 80 100 120 Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. 0 Number of cycles 1 10 100 1000 Fig. 8: On-state characteristics (maximum values). ITM(A) ITSM(A),I²t(A²s) 100.0 300 Tj initial=25°C ITSM 100 10.0 Tj max.: Vto=0.85V Rt=46m Tj=Tj max. 50 Tj=25°C I²t 1.0 20 tp(ms) 10 1 2 5 10 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). Rth(j-a) (°C/W) 100 80 60 40 20 S(Cu) (cm²) 0 4/5 0 2 4 6 8 10 12 14 16 18 20 VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TN805/815-B PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. Millimeters Min. Typ. Max Min. Typ. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C C2 0.45 0.48 0.60 0.017 0.60 0.018 0.023 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 FOOT PRINT DIMENSIONS (in millimeters) Inches 0.80 L4 0.60 V2 0° 0.031 1.00 0.023 8° 0° 0.039 8° WEIGHT : 0.30g MARKING 6.7 6.7 6.7 TYPE MARKING T805- x00B TN8 05x0 T815-x00B TN8 15x0 3 1.6 1.6 2.3 2.3 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5