TS4872 RAIL TO RAIL INPUT/OUTPUT 1W AUDIO POWER AMPLIFIER WITH STANDBY MODE ■ OPERATING FROM VCC = 2.2V to 5.5V PIN CONNECTIONS (Top View) ■ RAIL TO RAIL INPUT/OUTPUT ■ 1W OUTPUT POWER @ Vcc=5V, THD=1%, f=1kHz, with 8Ω Load TS4872IJT - FLIP CHIP ■ ULTRA LOW CONSUMPTION IN STANDBY MODE (10nA) 7 ■ 75dB PSRR @ 217Hz @ 5 & 2.6V + ■ ULTRA LOW POP & CLICK Vin ■ ULTRA LOW DISTORTION (0.05%) 8 6 5 Vcc STDBY Vout1 Vout2 ■ UNITY GAIN STABLE ■ 8 X170µm BUMPS FLIP CHIP PACKAGE Vin GND 1 2 4 BYPASS 3 DESCRIPTION The TS4872 is an Audio Power Amplifier capable of delivering 1W of continuous RMS Ouput Power into 8Ω load @ 5V. This Audio Amplifier is exhibiting 0.1% distortion level (THD) from a 5V supply for a Pout = 250mW RMS. An external standby mode control reduces the supply current to less than 10nA. An internal shutdown protection is provided. The TS4872 has been designed for high quality audio applications such as mobile phones and to minimize the number of external components. TYPICAL APPLICATION SCHEMATIC The unity-gain stable amplifier can be configured by external gain setting resistors. Cfeed Rfeed APPLICATIONS Audio Input ■ PDAs Rin Cin ■ Laptop/Notebook computers ■ Portable Audio Devices -40, +85°C 7 VinVin+ - Vout1 8 + RL 8 Ohms 3 Bypass 5 Standby Av=-1 + Vout2 4 Rstb Package Marking J ● Bias GND TS4872IJT 1 Vcc ORDER CODE Temperature Range Cs Vcc ■ Mobile Phones (Cellular / Cordless) Part Number Vcc 6 Cb TS4872 2 YW4872 J = Flip Chip Package - only available in Tape & Reel (JT) October 2002 1/29 TS4872 ABSOLUTE MAXIMUM RATINGS Symbol VCC Vi Parameter Supply voltage Input Voltage 1) 2) Value Unit 6 V GND to VCC V °C Toper Operating Free Air Temperature Range -40 to + 85 Tstg Storage Temperature -65 to +150 °C 150 °C 200 °C/W Tj Maximum Junction Temperature Flip Chip Thermal Resistance Junction to Ambient 3) Pd Power Dissipation ESD Human Body Model ESD Machine Model Latch-up Latch-up Immunity Lead Temperature (soldering, 10sec) Rthja Internally Limited 2 200 Class A 250 kV V °C 1. All voltages values are measured with respect to the ground pin. 2. The magnitude of input signal must never exceed VCC + 0.3V / G ND - 0.3V 3. Device is protected in case of over temperature by a thermal shutdown active @ 150°C OPERATING CONDITIONS Symbol Parameter VCC Supply Voltage VICM Common Mode Input Voltage Range VCC from 2.6V to 5V VCC < 2.6V VSTB Standby Voltage Input : Device ON Device OFF RL Rthja Flip Chip Thermal Resistance Junction to Ambient 2/29 Unit 2.2 to 5.5 V GND to VCC VCC / 2 GND ≤ VSTB ≤ 0.5V VCC - 0.5V ≤ VSTB ≤ VCC Load Resistor 1. With Heat Sink Surface = 125mm 2 Value 1) V 4 - 32 Ω 95 °C/W TS4872 ELECTRICAL CHARACTERISTICS VCC = +5V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Typ. Max. Unit Supply Current No input signal, no load 6 8 mA Standby Current 1) No input signal, Vstdby = Vcc, RL = 8Ω 10 1000 nA Voo Output Offset Voltage No input signal, RL = 8Ω 5 20 mV Po Output Power THD = 1% Max, f = 1kHz, RL = 8Ω 1 W Total Harmonic Distortion + Noise Po = 250mW rms, Gv = 2, 20Hz < f < 20kHz, RL = 8Ω 0.1 % Power Supply Rejection Ratio 2) f = 217Hz, RL = 8Ω, RFeed = 22KΩ, Vripple = 200mV rms 75 dB ΦM Phase Margin at Unity Gain RL = 8Ω, CL = 500pF 70 Degrees GM Gain Margin RL = 8Ω, CL = 500pF 20 dB GBP Gain Bandwidth Product RL = 8Ω 2 MHz ICC ISTANDBY THD + N PSRR Parameter Min. 1. Standby mode is actived when Vstdby is tied to Vcc 2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the surimposed sinus signal to Vcc @ f = 217Hz VCC = +3.3V, GND = 0V, Tamb = 25°C (unless otherwise specified) 3) Symbol ICC ISTANDBY Parameter Min. Typ. Max. Unit Supply Current No input signal, no load 5.5 8 mA Standby Current 1) No input signal, Vstdby = Vcc, RL = 8Ω 10 1000 nA 5 20 mV Voo Output Offset Voltage No input signal, RL = 8Ω Po Output Power THD = 1% Max, f = 1kHz, RL = 8Ω 450 mW Total Harmonic Distortion + Noise Po = 250mW rms, Gv = 2, 20Hz < f < 20kHz, RL = 8Ω 0.1 % Power Supply Rejection Ratio 2) f = 217Hz, RL = 8Ω, RFeed = 22KΩs, Vripple = 100mV rms 68 dB ΦM Phase Margin at Unity Gain RL = 8Ω, CL = 500pF 70 Degrees GM Gain Margin RL = 8Ω, CL = 500pF 20 dB GBP Gain Bandwidth Product RL = 8Ω 2 MHz THD + N PSRR 1. Standby mode is actived when Vstdby is tied to Vcc 2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the surimposed sinus signal to Vcc @ f = 217Hz 3 All electrical values are made by correlation between 2.6v and 5v measurements 3/29 TS4872 ELECTRICAL CHARACTERISTICS VCC = 2.6V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Typ. Max. Unit Supply Current No input signal, no load 5.5 8 mA Standby Current 1) No input signal, Vstdby = Vcc, RL = 8Ω 10 1000 nA Voo Output Offset Voltage No input signal, RL = 8Ω 5 20 mV Po Output Power THD = 1% Max, f = 1kHz, RL = 8Ω 260 mW Total Harmonic Distortion + Noise Po = 200mW rms, Gv = 2, 20Hz < f < 20kHz, RL = 8Ω 0.1 % Power Supply Rejection Ratio 2) f = 217Hz, RL = 8Ω, RFeed = 22KΩ, Vripple = 200mV rms 75 dB ΦM Phase Margin at Unity Gain RL = 8Ω, CL = 500pF 70 Degrees GM Gain Margin RL = 8Ω, CL = 500pF 20 dB GBP Gain Bandwidth Product RL = 8Ω 2 MHz ICC ISTANDBY THD + N PSRR Parameter Min. 1. Standby mode is actived when Vstdby is tied to Vcc 2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the surimposed sinus signal to Vcc @ f = 217Hz VCC = 2.2V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Supply Current No input signal, no load 4.5 mA Standby Current 1) No input signal, Vstdby = Vcc, RL = 8Ω 10 nA Voo Output Offset Voltage No input signal, RL = 8Ω 2 mV Po Output Power THD = 1% Max, f = 1kHz, RL = 8Ω 180 mW Total Harmonic Distortion + Noise Po = 200mW rms, Gv = 2, 20Hz < f < 20kHz, RL = 8Ω 0.1 % Power Supply Rejection Ratio 2) f = 217Hz, RL = 8Ω, RFeed = 22KΩ, Vripple = 100mVpp 75 dB ΦM Phase Margin at Unity Gain RL = 8Ω, CL = 500pF 70 Degrees GM Gain Margin RL = 8Ω, CL = 500pF 20 dB GBP Gain Bandwidth Product RL = 8Ω 2 MHz ICC ISTANDBY THD + N PSRR 1. Standby mode is actived when Vstdby is tied to Vcc 2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the surimposed sinus signal to Vcc @ f = 217Hz 4/29 TS4872 Components Functional Description Rin Inverting input resistor which sets the closed loop gain in conjunction with Rfeed. This resistor also forms a high pass filter with Cin (fc = 1 / (2 x Pi x Rin x Cin)) Cin Input coupling capacitor which blocks the DC voltage at the amplifier input terminal Rfeed Feed back resistor which sets the closed loop gain in conjunction with Rin Cs Supply Bypass capacitor which provides power supply filtering Cb Bypass pin capacitor which provides half supply filtering Cfeed Rstb Gv Low pass filter capacitor allowing to cut the high frequency (low pass filter cut-off frequency 1 / (2 x Pi x Rfeed x Cfeed)) Pull-up resistor which fixes the right supply level on the standby pin Closed loop gain in BTL configuration = 2 x (Rfeed / Rin) REMARKS 1. All measurements, except PSRR measurements, are made with a supply bypass capacitor Cs = 100µF. 2. External resistors are not needed for having better stability when supply @ Vcc down to 3V. By the way, the quiescent current remains the same. 3. The standby response time is about 1µs. 5/29 TS4872 Fig. 1 : Open Loop Frequency Response Fig. 2 : Open Loop Frequency Response 0 -60 40 -80 -100 -120 -140 -60 -80 Phase -100 20 -120 -140 0 -160 -160 -180 -20 -180 -20 -200 -40 0.3 1 10 100 1000 -200 -220 10000 -40 0.3 1 10 Frequency (kHz) Fig. 3 : Open Loop Frequency Response 60 Vcc = 3.3V RL = 8Ω Tamb = 25°C -60 -100 -120 20 -140 -160 0 Phase (Deg) Gain (dB) Phase Gain 60 -40 -80 40 0 80 -20 Gain (dB) Gain Vcc = 3.3V ZL = 8Ω + 560pF Tamb = 25°C Phase 10 100 1000 Frequency (kHz) 10000 -140 -160 -180 -200 -20 -220 -40 0.3 -240 Fig. 5 : Open Loop Frequency Response Gain 60 Vcc = 2.6V RL = 8Ω Tamb = 25°C 60 -40 -60 -120 20 -140 -160 0 10000 Vcc = 2.6V ZL = 8Ω + 560pF Tamb = 25°C Phase -200 6/29 1 10 100 1000 Frequency (kHz) 10000 -240 -40 -60 -120 -140 -160 0 -180 -200 -20 -220 -220 -40 0.3 -20 -100 20 -180 -20 -240 -80 40 Gain (dB) -100 100 1000 Frequency (kHz) 0 Gain Phase (Deg) Gain (dB) Phase 10 80 -20 -80 40 1 Fig. 6 : Open Loop Frequency Response 0 80 -60 -120 0 -200 1 -40 -100 20 -220 -40 0.3 -20 -80 40 -180 -20 -220 10000 Fig. 4 : Open Loop Frequency Response 0 80 100 1000 Frequency (kHz) Phase (Deg) 0 -40 -40 0.3 1 10 100 1000 Frequency (kHz) 10000 -240 Phase (Deg) 20 -20 Vcc = 5V ZL = 8Ω + 560pF Tamb = 25°C Phase (Deg) Gain -40 Phase Gain (dB) 60 Gain (dB) 40 0 -20 Vcc = 5V RL = 8Ω Tamb = 25°C Gain Phase (Deg) 60 TS4872 Phase 60 100 -100 80 -120 60 Gain (dB) Gain -140 40 -160 20 0 -20 -40 0.3 -180 1 10 -140 -160 -180 -20 -220 -40 0.3 10000 -120 20 -200 100 1000 Frequency (kHz) -100 Phase 40 0 Vcc = 5V CL = 560pF Tamb = 25°C -80 Gain Gain (dB) 80 -80 Phase (Deg) 100 Fig. 8 : Open Loop Frequency Response -200 Vcc = 3.3V CL = 560pF Tamb = 25°C 1 10 Phase (Deg) Fig. 7 : Open Loop Frequency Response -220 100 1000 Frequency (kHz) 10000 -240 Fig. 9 : Open Loop Frequency Response 100 -80 80 -100 Phase Gain (dB) Gain -140 40 -160 20 -180 0 -20 -40 0.3 -200 Vcc = 2.6V CL = 560pF Tamb = 25°C 1 10 Phase (Deg) -120 60 -220 100 1000 Frequency (kHz) 10000 -240 7/29 TS4872 Fig. 10 : Power Supply Rejection Ratio (PSRR) vs Power Supply Fig. 11 : Power Supply Rejection Ratio (PSRR) vs Feedback Capacitor -10 -30 -50 -20 -30 PSRR (dB) PSRR (dB) -40 Rfeed = 22kΩ Cb = 1µF & 0.1µF Input = floating RL = 8Ω Tamb = 25°C Vcc=3.3V Ripple=100mVrms -60 Vcc=5V Ripple=200mVrms -40 -50 Vcc = 5V Cb = 1µF & 0.1µF Rfeed = 22kΩ Rfeed = 22kΩ Vripple = 200mVms Input = floating RL = 8Ω Tamb = 25°C Cfeed=0 Cfeed=150pF Cfeed=330pF -60 -70 -70 Vcc=2.6V Ripple=200mVrms -80 10 100 1000 10000 Frequency (Hz) -80 10 100000 Fig. 12 : Power Supply Rejection Ratio (PSRR) vs Bypass Capacitor -10 Cb=10µF PSRR (dB) -30 1000 10000 Frequency (Hz) Cin=1µF -40 Cb=47µF -50 100000 Vcc = 5 & 2.6V Rfeed = 22k, Rin = 22k Cb = 1µF Rg = 100Ω, RL = 8Ω Tamb = 25°C Cin=330nF -20 PSRR (dB) -20 Vcc = 5 & 2.6V Rfeed = 22k Rin = 22k, Cin = 1µF Rg = 100Ω, RL = 8Ω Tamb = 25°C 100 Fig. 13 : Power Supply Rejection Ratio (PSRR) vs Input Capacitor -10 Cb=1µF Cfeed=680pF Cin=220nF -30 -40 Cin=100nF -60 -50 -70 Cin=22nF Cb=100µF -80 10 100 1000 10000 100000 Fig. 14 : Power Supply Rejection Ratio (PSRR) vs Feedback Resistor -10 PSRR (dB) -30 -40 -50 Vcc = 5V Cb = 1µF & 0.1µF Vripple = 200mVrms Input = floating RL = 8Ω Tamb = 25°C Rfeed=110kΩ Rfeed=47kΩ Rfeed=22kΩ -60 -70 Rfeed=10kΩ -80 10 8/29 100 100 1000 Frequency (Hz) Frequency (Hz) -20 -60 10 1000 10000 Frequency (Hz) 100000 10000 100000 TS4872 Fig. 15 : Pout @ THD + N = 1% vs Supply Voltage vs RL Fig. 16 : Pout @ THD + N = 10% vs Supply Voltage vs RL 1.2 1.0 2.0 8Ω Gv = 2 & 10 Cb = 1µF F = 1kHz BW < 125kHz Tamb = 25°C Output power @ 10% THD + N (W) Output power @ 1% THD + N (W) 1.4 6Ω 4Ω 0.8 16Ω 0.6 0.4 0.2 32Ω 0.0 2.5 3.0 3.5 4.0 4.5 Gv = 2 & 10 Cb = 1µF F = 1kHz BW < 125kHz Tamb = 25°C 1.8 1.6 1.4 4Ω 1.2 1.0 16Ω 0.8 0.6 0.4 0.2 32Ω 0.0 2.5 5.0 8Ω 3.0 3.5 4.5 5.0 Fig. 18 : Power Dissipation vs Pout 1.4 0.6 Vcc=5V 1.2 F=1kHz THD+N<1% Vcc=3.3V F=1kHz 0.5 THD+N<1% RL=4Ω Power Dissipation (W) Power Dissipation (W) Fig. 17 : Power Dissipation vs Pout 1.0 0.8 0.6 RL=8Ω 0.4 RL=4Ω 0.4 0.3 0.2 RL=8Ω 0.1 0.2 RL=16Ω 0.0 0.0 0.2 0.4 0.6 0.8 RL=16Ω 1.0 1.2 0.0 0.0 1.4 0.2 Output Power (W) Flip-Chip Package Power Dissipation (W) Vcc=2.6V F=1kHz THD+N<1% RL=4Ω 0.25 0.20 0.15 RL=8Ω 0.10 0.05 0.00 0.0 RL=16Ω 0.1 0.2 Output Power (W) 0.6 0.8 Fig. 20 : Power Derating Curves 0.40 0.30 0.4 Output Power (W) Fig. 19 : Power Dissipation vs Pout Power Dissipation (W) 4.0 Vcc (V) Vcc (V) 0.35 6Ω 0.3 0.4 1.4 Heat sink surface = 125mm (See demoboard) 1.2 2 1.0 0.8 0.6 0.4 No Heat sink 0.2 0.0 0 25 50 75 100 125 150 Ambiant Temperature ( C) 9/29 TS4872 Fig. 21 : THD + N vs Output Power Fig. 22 : THD + N vs Output Power 10 Rl = 4Ω, Vcc = 5V Gv = 10 Cb = Cin = 1µF BW < 125kHz, Tamb = 25°C 20kHz 0.1 20kHz 1 THD + N (%) THD + N (%) 1 10 Rl = 4Ω Vcc = 5V Gv = 2 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 0.1 20Hz 0.01 1E-3 0.01 0.1 Output Power (W) 0.01 1E-3 1 Fig. 23 : THD + N vs Output Power 20Hz 1kHz 0.01 0.1 Output Power (W) 1 0.01 1E-3 0.01 0.1 Output Power (W) 1 Fig. 26 : THD + N vs Output Power 10 10 THD + N (%) Rl = 4Ω, Vcc = 2.6V Gv = 2 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 20kHz 0.1 1 0.1 20Hz 0.01 1E-3 20kHz 1kHz Fig. 25 : THD + N vs Output Power 1 Rl = 4Ω, Vcc = 3.3V Gv = 10 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 0.1 20Hz 0.01 1E-3 1 THD + N (%) THD + N (%) 0.1 THD + N (%) 1 10 Rl = 4Ω, Vcc = 3.3V Gv = 2 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 20kHz 10/29 0.01 0.1 Output Power (W) Fig. 24 : THD + N vs Output Power 10 1 1kHz 1kHz 20Hz 1kHz 0.01 Output Power (W) Rl = 4Ω, Vcc = 2.6V Gv = 10 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 20Hz 20kHz 1kHz 0.1 0.01 1E-3 0.01 Output Power (W) 0.1 TS4872 Fig. 27 : THD + N vs Output Power Fig. 28 : THD + N vs Output Power 10 10 THD + N (%) 1 20kHz 0.1 20kHz 20Hz 1kHz 20Hz 0.01 0.1 Output Power (W) 0.01 1E-3 1 Fig. 29 : THD + N vs Output Power 1kHz 0.01 0.1 Output Power (W) 1 Fig. 30 : THD + N vs Output Power 10 10 Rl = 8Ω, Vcc = 3.3V Gv = 2 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 0.1 20Hz 1 THD + N (%) THD + N (%) Rl = 8Ω Vcc = 5V Gv = 10 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 0.1 0.01 1E-3 1 1 THD + N (%) Rl = 8Ω Vcc = 5V Gv = 2 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 20kHz Rl = 8Ω, Vcc = 3.3V Gv = 10 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 20Hz 0.1 20kHz 1kHz 1kHz 0.01 1E-3 0.01 0.1 Output Power (W) 1 Fig. 31 : THD + N vs Output Power 0.01 1E-3 10 Rl = 8Ω, Vcc = 2.6V Gv = 2 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 20Hz 0.1 THD + N (%) THD + N (%) 1 Fig. 32 : THD + N vs Output Power 10 1 0.01 0.1 Output Power (W) 20kHz 1 Rl = 8Ω, Vcc = 2.6V Gv = 10 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 20Hz 0.1 20kHz 1kHz 1kHz 0.01 1E-3 0.01 Output Power (W) 0.1 0.01 1E-3 0.01 Output Power (W) 0.1 11/29 TS4872 Fig. 33 : THD + N vs Output Power Fig. 34 : THD + N vs Output Power 10 10 THD + N (%) 1 Rl = 8Ω, Vcc = 5V, Gv = 10 Cb = 0.1µF, Cin = 1µF BW < 125kHz, Tamb = 25°C 1 THD + N (%) Rl = 8Ω Vcc = 5V Gv = 2 Cb = 0.1µF, Cin = 1µF BW < 125kHz Tamb = 25°C 20Hz 0.1 20Hz 0.1 20kHz 20kHz 0.01 1E-3 0.01 0.1 Output Power (W) 0.01 1E-3 1 Fig. 35 : THD + N vs Output Power 1 10 Rl = 8Ω, Vcc = 3.3V Gv = 2 Cb = 0.1µF, Cin = 1µF BW < 125kHz Tamb = 25°C 0.1 20Hz Rl = 8Ω, Vcc = 3.3V, Gv = 10 Cb = 0.1µF, Cin = 1µF BW < 125kHz, Tamb = 25°C 1 THD + N (%) THD + N (%) 0.01 0.1 Output Power (W) Fig. 36 : THD + N vs Output Power 10 1 1kHz 1kHz 20kHz 20Hz 20kHz 0.1 1kHz 1kHz 0.01 1E-3 0.01 0.1 Output Power (W) 1 Fig. 37 : THD + N vs Output Power 0.01 1E-3 10 Rl = 8Ω, Vcc = 2.6V, Gv = 10 Cb = 0.1µF, Cin = 1µF BW < 125kHz, Tamb = 25°C Rl = 8Ω, Vcc = 2.6V Gv = 2 Cb = 0.1µF, Cin = 1µF BW < 125kHz Tamb = 25°C 20Hz 0.1 THD + N (%) THD + N (%) 1 Fig. 38 : THD + N vs Output Power 10 1 0.01 0.1 Output Power (W) 20kHz 1 20kHz 20Hz 0.01 Output Power (W) 0.1 0.1 1kHz 1kHz 0.01 1E-3 12/29 0.01 Output Power (W) 0.1 0.01 1E-3 TS4872 Fig. 39 : THD + N vs Output Power Fig. 40 : THD + N vs Output Power 10 10 0.1 20Hz 20kHz Rl = 16Ω, Vcc = 5V Gv = 10 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 1 THD + N (%) THD + N (%) 1 Rl = 16Ω, Vcc = 5V Gv = 2 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 20kHz 0.1 20Hz 0.01 1kHz 1kHz 1E-3 0.01 0.1 Output Power (W) 1 Fig. 41 : THD + N vs Output Power 0.01 1E-3 10 Rl = 16Ω, Vcc = 3.3V Gv = 2 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C THD + N (%) THD + N (%) 1 Fig. 42 : THD + N vs Output Power 10 1 0.01 0.1 Output Power (W) 0.1 20Hz 20kHz Rl = 16Ω Vcc = 3.3V Gv = 10 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 1 20Hz 0.1 20kHz 0.01 1kHz 1kHz 0.01 1E-3 0.01 Output Power (W) 0.1 1E-3 Fig. 43 : THD + N vs Output Power 10 Rl = 16Ω Vcc = 2.6V Gv = 2 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 0.1 20Hz THD + N (%) THD + N (%) 0.1 Fig. 44 : THD + N vs Output Power 10 1 0.01 Output Power (W) Rl = 16Ω Vcc = 2.6V Gv = 10 Cb = Cin = 1µF BW < 125kHz Tamb = 25°C 1 20Hz 0.1 20kHz 20kHz 0.01 1E-3 1kHz 1kHz 0.01 Output Power (W) 0.1 0.01 1E-3 0.01 Output Power (W) 0.1 13/29 TS4872 Fig. 45 : THD + N vs Frequency RL = 4Ω, Vcc = 5V Gv = 2 Cb = 1µF BW < 125kHz Tamb = 25°C 1 Pout = 1.2W Pout = 1.2W THD + N (%) THD + N (%) 1 Fig. 46 : THD + N vs Frequency 0.1 0.1 Pout = 600mW 0.01 20 100 1000 Frequency (Hz) Fig. 47 : THD + N vs Frequency 100 1000 Frequency (Hz) 10000 Fig. 48 : THD + N vs Frequency RL = 4Ω, Vcc = 3.3V Gv = 2 Cb = 1µF BW < 125kHz Tamb = 25°C RL = 4Ω, Vcc = 3.3V Gv = 10 Cb = 1µF BW < 125kHz Tamb = 25°C 1 Pout = 540mW THD + N (%) THD + N (%) 1 0.01 20 10000 Pout = 600mW RL = 4Ω, Vcc = 5V Gv = 10 Cb = 1µF BW < 125kHz Tamb = 25°C Pout = 540mW 0.1 0.1 Pout = 270mW Pout = 270mW 0.01 20 100 1000 Frequency (Hz) Fig. 49 : THD + N vs Frequency RL = 4Ω, Vcc = 2.6V Gv = 2 Cb = 1µF BW < 125kHz Tamb = 25°C 1000 Frequency (Hz) 10000 RL = 4Ω, Vcc = 2.6V Gv = 10 Cb = 1µF BW < 125kHz Tamb = 25°C 1 Pout = 240 & 120mW 0.1 100 Fig. 50 : THD + N vs Frequency THD + N (%) THD + N (%) 1 0.01 20 10000 0.1 Pout = 240 & 120mW 0.01 20 14/29 100 1000 Frequency (Hz) 10000 0.01 20 100 1000 Frequency (Hz) 10000 TS4872 Fig. 51 : THD + N vs Frequency Fig. 52 : THD + N vs Frequency 1 1 THD + N (%) Cb = 0.1µF 0.1 0.1 Cb = 1µF Cb = 1µF 100 1000 Frequency (Hz) 10000 Fig. 53 : THD + N vs Frequency THD + N (%) 0.1 100 1000 Frequency (Hz) RL = 8Ω, Vcc = 5V Gv = 10 Pout = 450mW BW < 125kHz Tamb = 25°C 0.1 0.01 20 10000 100 1000 Frequency (Hz) 10000 Fig. 56 : THD + N vs Frequency 1 1 RL = 8Ω, Vcc = 3.3V Gv = 2 Pout = 400mW BW < 125kHz Tamb = 25°C 0.1 Cb = 0.1µF THD + N (%) Cb = 0.1µF THD + N (%) 10000 Cb = 1µF Fig. 55 : THD + N vs Frequency Cb = 1µF 0.01 20 100 1000 Frequency (Hz) Cb = 0.1µF 1 Cb = 1µF 0.01 20 100 Fig. 54 : THD + N vs Frequency RL = 8Ω, Vcc = 5V Gv = 10 Pout = 900mW BW < 125kHz Tamb = 25°C Cb = 0.1µF 1 0.01 20 THD + N (%) 0.01 20 RL = 8Ω Vcc = 5V Gv = 2 Pout = 450mW BW < 125kHz Tamb = 25°C Cb = 0.1µF THD + N (%) RL = 8Ω Vcc = 5V Gv = 2 Pout = 900mW BW < 125kHz Tamb = 25°C RL = 8Ω, Vcc = 3.3V Gv = 2 Pout = 200mW BW < 125kHz Tamb = 25°C 0.1 Cb = 1µF 1000 Frequency (Hz) 10000 0.01 20 100 1000 Frequency (Hz) 10000 15/29 TS4872 Cb = 0.1µF THD + N (%) 1 Fig. 58 : THD + N vs Frequency RL = 8Ω, Vcc = 3.3V Gv = 10 Pout = 400mW BW < 125kHz Tamb = 25°C 0.1 100 Cb = 1µF 1000 Frequency (Hz) 0.01 20 10000 Fig. 59 : THD + N vs Frequency THD + N (%) THD + N (%) RL = 8Ω, Vcc = 2.6V Gv = 2 Pout = 220mW BW < 125kHz Tamb = 25°C 0.1 Cb = 0.1µF RL = 8Ω, Vcc = 2.6V Gv = 10 Pout = 110mW BW < 125kHz Tamb = 25°C Cb = 1µF 1000 Frequency (Hz) Cb = 0.1µF 1 0.01 20 10000 RL = 8Ω, Vcc = 2.6V Gv = 10 Pout = 220mW BW < 125kHz Tamb = 25°C 0.1 1 1000 Frequency (Hz) 10000 Cb = 0.1µF RL = 8Ω, Vcc = 2.6V Gv = 10 Pout = 110mW BW < 125kHz Tamb = 25°C 0.1 Cb = 1µF 100 100 Fig. 62 : THD + N vs Frequency THD + N (%) 100 Fig. 61 : THD + N vs Frequency THD + N (%) 10000 0.1 Cb = 1µF 16/29 1000 Frequency (Hz) 1 Cb = 0.1µF 0.01 20 100 Fig. 60 : THD + N vs Frequency 1 0.01 20 RL = 8Ω, Vcc = 3.3V Gv = 10 Pout = 200mW BW < 125kHz Tamb = 25°C 0.1 Cb = 1µF 0.01 20 Cb = 0.1µF 1 THD + N (%) Fig. 57 : THD + N vs Frequency Cb = 1µF 1000 Frequency (Hz) 10000 0.01 20 100 1000 Frequency (Hz) 10000 TS4872 Fig. 63 : THD + N vs Frequency Fig. 64 : THD + N vs Frequency 0.1 RL = 16Ω, Vcc = 5V Gv = 10, Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) THD + N (%) Pout = 310mW 0.01 Pout = 620mW 1E-3 20 100 1000 Frequency (Hz) Pout = 620mW 0.01 20 10000 10000 RL = 16Ω, Vcc = 3.3V Gv = 10, Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) 0.01 Pout = 270mW 100 Pout = 270mW 0.1 Pout = 135mW RL = 16Ω, Vcc = 3.3V Gv = 2, Cb = 1µF BW < 125kHz Tamb = 25°C 1000 Frequency (Hz) 0.01 20 10000 100 1000 Frequency (Hz) 10000 Fig. 68 : THD + N vs Frequency Fig. 67 : THD + N vs Frequency 0.1 1 RL = 16Ω, Vcc = 2.6V Gv = 10, Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) Pout = 80mW THD + N (%) 1000 Frequency (Hz) 1 Pout = 135mW 0.01 Pout = 160mW 1E-3 20 100 Fig. 66 : THD + N vs Frequency 0.1 THD + N (%) Pout = 310mW RL = 16Ω, Vcc = 5V Gv = 2, Cb = 1µF BW < 125kHz Tamb = 25°C Fig. 65 : THD + N vs Frequency 1E-3 20 0.1 100 0.1 RL = 16Ω, Vcc = 2.6V Gv = 2, Cb = 1µF BW < 125kHz Tamb = 25°C 1000 Frequency (Hz) 10000 Pout = 160mW Pout = 80mW 0.01 20 100 1000 Frequency (Hz) 10000 17/29 TS4872 Fig. 69 : Signal to Noise Ratio vs Power Supply with Unweighted Filter (20Hz to 20kHz) Fig. 70 : Signal to Noise Ratio Vs Power Supply with Unweighted Filter (20Hz to 20kHz) 100 90 90 80 RL=4Ω RL=8Ω RL=16Ω SNR (dB) SNR (dB) 80 70 Gv = 2 Cb = Cin = 1µF THD+N < 0.4% Tamb = 25°C 60 50 2.5 RL=8Ω 3.0 3.5 4.0 4.5 RL=16Ω 70 RL=4Ω Gv = 10 Cb = Cin = 1µF THD+N < 0.7% Tamb = 25°C 60 50 2.5 5.0 3.0 3.5 4.0 4.5 5.0 Vcc (V) Vcc (V) Fig. 71 : Signal to Noise Ratio vs Power Supply with Weighted Filter type A Fig. 72 : Signal to Noise Ratio vs Power Supply with Weighted Filter Type A 110 100 100 90 RL=4Ω RL=8Ω RL=16Ω SNR (dB) SNR (dB) 90 80 Gv = 2 Cb = Cin = 1µF THD+N < 0.4% Tamb = 25°C 70 60 2.5 3.0 3.5 4.0 4.5 RL=8Ω RL=16Ω 80 RL=4Ω Gv = 10 Cb = Cin = 1µF THD+N < 0.7% Tamb = 25°C 70 60 2.5 5.0 3.0 3.5 Fig. 73 : Frequency Response Gain vs Cin, & Cfeed 7 5 6 Cfeed = 680pF -15 -20 -25 10 18/29 Cin = 470nF Icc (mA) Gain (dB) -10 Cfeed = 2.2nF Vstandby = 0V Tamb = 25°C 4 3 2 Cin = 22nF Cin = 82nF 5.0 5 Cfeed = 330pF -5 4.5 Fig. 74 : Current Consumption vs Power Supply Voltage 10 0 4.0 Vcc (V) Vcc (V) Rin = Rfeed = 22kΩ Tamb = 25°C 1 0 100 1000 Frequency (Hz) 10000 0 1 2 3 Vcc (V) 4 5 TS4872 Fig. 76 : Current Consumption vs Standby Voltage @ Vcc = 3.3V Fig. 75 : Current Consumption vs Standby Voltage @ Vcc = 5V 6 7 Vcc = 5V Tamb = 25°C 6 5 4 Icc (mA) Icc (mA) Vcc = 3.3V Tamb = 25°C 5 4 3 3 2 2 1 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.0 5.0 0.5 1.0 Vstandby (V) 2.0 2.5 3.0 Fig. 78 : Clipping Voltage vs Power Supply Voltage and Load Resistor Fig. 77 : Current Consumption vs Standby Voltage @ Vcc = 2.6V 1.0 6 0.9 Vout1 & Vout2 Clipping Voltage Low side (V) Vcc = 2.6V Tamb = 25°C 5 4 Icc (mA) 1.5 Vstandby (V) 3 2 1 0 0.0 0.7 0.6 1.0 1.5 Vstandby (V) 2.0 2.5 RL = 4Ω 0.5 RL = 8Ω 0.4 0.3 0.2 0.1 0.0 2.5 0.5 Tamb = 25°C 0.8 RL = 16Ω 3.0 3.5 4.0 4.5 5.0 Power supply Voltage (V) Fig. 79 : Clipping Voltage vs Power Supply Voltage and Load Resistor 1.0 Vout1 & Vout2 Clipping Voltage High side (V) 0.9 Tamb = 25°C 0.8 0.7 0.6 0.5 RL = 4Ω RL = 8Ω 0.4 0.3 0.2 0.1 0.0 2.5 RL = 16Ω 3.0 3.5 4.0 4.5 5.0 Power supply Voltage (V) 19/29 TS4872 APPLICATION INFORMATION Fig. 80 : Demoboard Schematic Vcc S1 Vcc C1 R2 S2 GND C2 R1 Vcc Neg. input J1 C6 + 100µ Neg. input J2 6 C3 C5 R4 C4 1 R5 7 Vin- S6 Vin+ - Vout1 8 + C9 + 470µ S5 Positive Input mode Pos input J3 J4 3 Bypass 5 Standby Av=-1 + S8 Standby + + C12 1u GND S4 Vout2 4 C10 + 470µ Bias R7 100k GND Vcc OUT1 S3 GND S7 R6 Pos input C8 100n TS4872 2 C11 1u Fig. 81 : Flip Chip Demoboard Components Side 20/29 U1 Vcc R3 C7 100n Fig. 82 : Flip Chip Demoboard Top Layer TS4872 Fig. 83 : Flip Chip Demoboard Bottom Layer The differential output voltage is Rfee d Vout2 – Vo ut1 = 2Vin -------------------- (V) Rin The differential gain named gain (Gv) for more convenient usage is : Vout2 – Vou t1 Rfee d Gv = --------------------------------------- = 2 -------------------Vin Rin Remark : Vout2 is in phase with Vin and Vout1 is 180 phased with Vin. It means that the positive terminal of the loudspeaker should be connected to Vout2 and the negative to Vout1. ■ Low and high frequency response In low frequency region, the effect of Cin starts. Cin with Rin forms a high pass filter with a -3dB cut off frequency ■ BTL Configuration Principle The TS4872 is a monolithic power amplifier with a BTL output type. BTL (Bridge Tied Load) means that each end of the load is connected to two single ended output amplifiers. Thus, we have : Single ended output 1 = Vout1 = Vout (V) Single ended output 2 = Vout2 = -Vout (V) 1 F C L = -------------------------------- ( Hz ) 2 π R in Cin In high frequency region, you can limit the bandwidth by adding a capacitor (Cfeed) in parallel on Rfeed. Its form a low pass filter with a -3dB cut off frequency 1 F C H = ----------------------------------------------- ( Hz ) 2π Rfe ed Cfeed And Vout1 - Vout2 = 2Vout (V) ■ Power dissipation and efficiency The output power is : Hypothesis : Pout = ( 2 Vout RMS ) 2 (W ) RL For the same power supply voltage, the output power in BTL configuration is four times higher than the output power in single ended configuration. • Voltage and current in the load are sinusoidal (Vout and Iout) • Supply voltage is a pure DC source (Vcc) Regarding the load we have : V O UT = V PEAK sin ωt (V) ■ Gain In Typical Application Schematic (cf. page 1) and V OU T I OU T = ----------------- (A) RL In flat region (no effect of Cin), the output voltage of the first stage is : R fe ed Vout1 = – Vin -------------------- (V) Rin For the second stage : Vout2 = -Vout1 (V) and VPEAK 2 P O U T = ---------------------- (W) 2 RL 21/29 TS4872 Then, the average current delivered by the supply voltage is: I CC AVG VPEAK = 2 -------------------- (A) πR L Then, the power dissipated by the amplifier is Pdiss = Psupply - Pout (W) 2 2 Vcc P di ss = ---------------------- P OU T – P O UT (W) π RL and the maximum value is obtained when: ∂Pdiss ---------------------- = 0 ∂P OU T and its value is: Cb has an influence on THD+N in lower frequency, but its function is critical on the final result of PSRR with input grounded in lower frequency. If Cb is lower than 1µF, THD+N increase in lower frequency (see THD+N vs frequency curves) and the PSRR worsens up If Cb is higher than 1µF, the benefit on THD+N in lower frequency is small but the benefit on PSRR is substantial (see PSRR vs. Cb curve : fig.12) Note that Cin has a non-negligible effect on PSRR in lower frequency. Lower is its value, higher is the PSRR (see fig. 13). ■ Pop and Click performance Pdiss max = 2 Vcc 2 π2RL (W) Remark : This maximum value is only depending on power supply voltage and load values. The efficiency is the ratio between the output power and the power supply πV P E A K P O UT η = ------------------------ = ----------------------Psup ply 4V C C The maximum theoretical value is reached when Vpeak = Vcc, so π ----- = 78.5% 4 ■ Decoupling of the circuit Two capacitors are needed to bypass properly the TS4872. A power supply bypass capacitor Cs and a bias voltage bypass capacitor Cb. Cs has especially an influence on the THD+N in high frequency (above 7kHz) and indirectly on the power supply disturbances. With 100µF, you can expect similar THD+N performances like shown in the datasheet. If Cs is lower than 100µF, in high frequency increases, THD+N and disturbances on the power supply rail are less filtered. To the contrary, if Cs is higher than 100µF, those disturbances on the power supply rail are more 22/29 filtered. Pop and Click performance is intimately linked with the size of the input capacitor Cin and the bias voltage bypass capacitor Cb. Size of Cin is due to the lower cut off frequency and PSRR value request and size of Cb is due to THD+N and PSRR request always in lower frequency. Moreover, Cb determines the speed at which the amplifier turns ON. The slower the speed is , the softer turns ON noise. The charge time of Cb is directly proportional to the internal generator resistance 50kΩ. Then, the charging time constant for Cb is τb = 50kΩxCb (s) As Cb is directly connected to the non-inverting input (pin 3 & 7) and if we want to minimize, in amplitude and duration, the output spike on Vout1 (pin 8), Cin must be charged faster than Cb. The charge time constant of Cin is τin = (Rin+Rfeed)xCin (s) Thus we have the relation τin << τb (s) The respect of this relation permits to minimize the pop and click noise. Remark : Minimize Cin and Cb has a benefit on pop and click phenomena but also on cost and size of the application. TS4872 Example : your target for the -3dB cut off frequency is 100 Hz. With Rin=Rfeed=22 kΩ, Cin=72nF (in fact 82nF or 100nF). With Cb=1µF, if you choose the one of the latest two values of Cin, the pop and click phenomena at power supply ON or standby function ON/OFF will be very small 50 kΩx1µF >> 44kΩx100nF (50ms >> 4.4ms). Increase Cin value increases the pop and click phenomena to an unpleasant sound at power supply ON and standby function ON/OFF. Why Cs is not important in pop and click consideration ? Hypothesis : • Cs = 100µF • Supply voltage = 5V • Supply voltage internal resistor = 0.1Ω • Supply current of the amplifier Icc = 6mA First of all, we must calculate the minimum power supply voltage to obtain 0.5W into 8Ω. With curves in fig. 15, we can read 3.5V. Thus, the power supply voltage value min. will be 3.5V. Following equation the maximum Pdiss max = power 2 Vcc 2 π2RL dissipation (W) with 3.5V we have Pdissmax=0.31W. Referring to power derating curves (fig. 20), with 0.31W the maximum ambient temperature will be 100°C. This last value could be higher if you follow the example layout shown on the demoboard (better dissipation). The gain of the amplifier in flat region will be At power ON of the supply, the supply capacitor is charged through the internal power supply resistor. So, to reach 5V you need about five to ten times the charging time constant of Cs (τs = 0.1xCs (s)). Then, this time equal 50µs to 100µs << τb in the majority of application. At power OFF of the supply, Cs is discharged by a constant current Icc. The discharge time from 5V to 0V of Cs is t D i s ch C s 5Cs = -------------- = 83 ms Icc Now, we must consider the discharge time of Cb. At power OFF or standby ON, Cb is discharged by a 100kΩ resistor. So the discharge time is about τb Disch ≈ 3xCbx100kΩ (s). In the majority of application, Cb=1µF, then τbDisch≈300ms >> tdischCs. ■ Power amplifier design examples Given : • • • • • • Load impedance : 8Ω Output power @ 1% THD+N : 0.5W Input impedance : 10kΩ min. Input voltage peak to peak : 1Vpp Bandwidth frequency : 20Hz to 20kHz (0, -3dB) Ambient temperature max = 50°C V OUTP P 2 2 R L P OUT G V = --------------------- = ------------------------------------ = 5.65 VINPP VINPP We have Rin > 10kΩ. Let's take Rin = 10kΩ, then Rfeed = 28.25kΩ. We could use for Rfeed = 30kΩ in normalized value and the gain will be Gv = 6. In lower frequency we want 20 Hz (-3dB cut off frequency). Then 1 C IN = ------------------------------ = 795nF 2π RinF C L So, we could use for Cin a 1µF capacitor value that gives 16Hz. In Higher frequency we want 20kHz (-3dB cut off frequency). The Gain Bandwidth Product of the TS4872 is 2MHz typical and doesn't change when the amplifier delivers power into the load. The first amplifier has a gain of Rfee d ----------------- = 3 R in and the theoretical value of the -3dB cut-off higher frequency is 2MHz/3 = 660kHz. We can keep this value or limit the bandwidth by adding a capacitor Cfeed, in parallel on Rfeed. 23/29 TS4872 Then 1 C FE E D = --------------------------------------- = 265pF 2π R F E E D F C H So, we could use for Cfeed a 220pF capacitor value that gives 24kHz. Application n°2 : 20Hz to 20kHz bandwidth and 20dB gain BTL power amplifier. Components : Designator Part Type R1 110k / 0.125W R4 22k / 0.125W R6 Short Cicuit R7 330k / 0.125W C5 470nF C6 100µF In the following tables, you could find three another examples with values required for the demoboard. C7 100nF C9 Short Circuit Remark : components with (*) marking are optional. C10 Short Circuit C12 1 µF Application n°1 : 20Hz to 20kHz bandwidth and 6dB gain BTL power amplifier. S1, S2, S6, S7 2mm insulated Plug 10.16mm pitch S8 2 pts connector 2.54mm pitch J1 SMB Plug U1 TS4872IJ Now, we can calculate the value of Cb with the formula τb = 50kΩxCb >> τin = (Rin+Rfeed)xCin which permits to reduce the pop and click effects. Then Cb >> 0.8µF. We can choose for Cb a normalized value of 2.2µF that gives good results in THD+N and PSRR. Components : Designator Part Type R1 22k / 0.125W R4 22k / 0.125W R6 Short Cicuit Application n°3 : 50Hz to 10kHz bandwidth and 10dB gain BTL power amplifier. R7 330k / 0.125W Components : C5 470nF C6 100µF R1 33k / 0.125W C7 100nF R2 Short Circuit C9 Short Circuit R4 22k / 0.125W C10 Short Circuit R6 Short Cicuit C12 1 µF R7 330k / 0.125W S1, S2, S6, S7 2mm insulated Plug 10.16mm pitch C2 470pF C5 150nF S8 2 pts connector 2.54mm pitch C6 100µF J1 SMB plug C7 100nF U1 TS4872IJ C9 Short Circuit 24/29 Designator Part Type TS4872 Designator Part Type Designator Part Type C10 Short Circuit C6 100µF C12 1µF C7 100nF S1, S2, S6, S7 2mm insulated Plug 10.16mm pitch C9 Short Circuit C10 Short Circuit S8 2 pts connector 2.54mm pitch C12 1µF J1 SMB Plug S1, S2, S6, S7 2mm insulated Plug 10.16mm pitch U1 TS4872IJ S8 2 pts connector 2.54mm pitch J1, J3 SMB Plug U1 TS4872IJ Application n°4 : Differential inputs BTL power amplifier. In this configuration, we need to place these components : R1, R4, R5, R6, R7, C4, C5, C12. We have also : R4 = R5, R1 = R6, C4 = C5. The gain of the amplifier is : G V D I FF R1 = 2 -------- (Pos. Input - Neg.Input) R4 ■ Note on how to use the PSRR curves (page 8) We have finished a design and we have chosen the components : ■ Rin=Rfeed=22kΩ For a 20Hz to 20kHz bandwidth and 6dB gain BTL power amplifier you could follow the bill of material below. ■ Cin=100nF Components : Now, on fig. 13, we can see the PSRR (input grounded) vs frequency curves. At 217Hz we have a PSRR value of -36dB. In reality we want a value about -70dB. So, we need a gain of 34dB ! Now, on fig. 12 we can see the effect of Cb on the PSRR (input grounded) vs. frequency. With Cb=100µF, we can reach the -70dB value. The process to obtain the final curve (Cb=100µF, Cin=100nF, Rin=Rfeed=22kΩ) is a simple transfer point by point on each frequency of the curve on fig. 13 to the curve on fig. 12. The measurement results is shown on figure 84. Designator Part Type R1 22k / 0.125W R4 22k / 0.125W R5 22k / 0.125W R6 22k / 0.125W R7 330k / 0.125W C4 470nF C5 470nF ■ Cb=1µF 25/29 TS4872 Fig. 85 : PSRR measurement schematic Fig. 84 : PSRR changes with Cb 6 Vripple Vcc Cin=100nF Cb=1µF Vcc 1 Rin -50 7 VinVin+ - Vout1 8 Cin -60 10 Rg 100 Ohms 100 1000 10000 100000 Frequency (Hz) ■ Note on PSRR measurement What is the PSRR ? The PSRR is the Power Supply Rejection Ratio. It’s a kind of SVR in a determined frequency range. The PSRR of a device, is the ratio between a power supply disturbance and the result on the output. We can say that the PSRR is the ability of a device to minimize the impact of power supply disturbances to the output. How we measure the PSRR ? For PSRR measurement schematic see figure 85 26/29 RL Cin=100nF Cb=100µF -70 Vs- + 3 Bypass 5 Standby Av=-1 + Cb Vout2 4 Vs+ Bias GND PSRR (dB) -40 Rfeed Vcc = 5 & 2.6V Rfeed = 22k, Rin = 22k Rg = 100Ω, RL = 8Ω Tamb = 25°C -30 TS4872 2 ■ Principle of operation • We fixed the DC voltage supply (Vcc) • We fixed the AC sinusoidal ripple voltage (Vripple) • No bypass capacitor Cs is used The PSRR value for each frequency is : PSRR ( d B ) = 20 x Log 10 R ms ( V r i p pl e ) --------------------------------------------Rms ( Vs + - Vs - ) Remark : The measure of the Rms voltage is not a Rms selective measure but a full range (2 Hz to 125 kHz) Rms measure. It means that we measure the effective Rms signal + the noise. TS4872 TOP VIEW OF THE DAISY CHAIN MECHANICAL DATA ( all drawings dimensions are in millimeters ) 7 + Vin 8 6 5 Vcc STDBY Vout1 Vout2 Vin GND 1 2 4 1.52 BYPASS 3 3.02 REMARKS Daisy chain sample is featuring pins connection two by two. The schematic above is illustrating the way connecting pins each other. This sample is used for testing continuity on board. PCB needs to be designed on the opposite way, where pin connections are not done on daisy chain samples. By that way, just connecting an Ohmeter between pin 8 and pin 1, the soldering process continuity can be tested. ORDER CODE Part Number TSDC4872IJT Temperature Range -40, +85°C Package Marking J • DC01 27/29 TS4872 TAPE & REEL SPECIFICATION ( top view ) User direction of feed 7 6 XXX4872 8 1 2 3 7 6 5 XXX4872 8 1 28/29 5 2 3 4 4 TS4872 PIN OUT (top view) MARKING (top view) 7 + Vin 8 6 5 Vcc STDBY Vout1 Vout2 Vin GND 1 2 4 BYPASS 3 ■ Balls are underneath ■ Y : Year ■ W : Week with two digits ■ Example : 1254872 PACKAGE MECHANICAL DATA FLIP CHIP - 8 BUMPS ■ ■ ■ ■ ■ Die size : (3.02mm±10%) x (1.52mm ±10%) Die height (including bumps) : 540µm ±50µm Bump height : 140µm ±15µm (i.e. bump diameter of 185µm ±15µm) Silicon thickness : 400µm±25µm Pitch: 500µm ±10µm and 750µm±10µm Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States © http://www.st.com 29/29