STMICROELECTRONICS W7NB80

STW7NB80

N-CHANNEL 800V - 1.6Ω - 6.5A - TO-247
PowerMESH MOSFET
TYPE
STW 7NB80
■
■
■
■
■
■
V DSS
R DS(on)
ID
800 V
< 1.9 Ω
6.5 A
TYPICAL RDS(on) = 1.6 Ω
EXTREMELY HIGH dv/dt CAPABILITY
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
2
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
Parameter
Value
800
V
Drain- gate Voltage (R GS = 20 kΩ)
G ate-source Voltage
800
V
V
A
ID
Drain Current (continuous) at Tc = 25 C
± 30
6.5
ID
Drain Current (continuous) at Tc = 100 o C
4.1
V GS
I DM (•)
P tot
dv/dt( 1)
Ts tg
Tj
Un it
Drain-source Voltage (VGS = 0)
o
A
Drain Current (pulsed)
26
A
T otal Dissipation at Tc = 25 o C
160
W
Derating Factor
1.28
W /o C
4
V/ns
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1999
-65 to 150
o
C
150
o
C
(1) I SD ≤ 6 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STW7NB80
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
0.78
o
C/W
30
0.1
300
o
C/W
C/W
o
C
Max Value
Unit
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
o
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
6.5
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 50 V)
260
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Typ.
Max.
800
V GS = 0
I DSS
Min.
Unit
V
T c = 125 oC
V GS = ± 30 V
1
50
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbo l
Parameter
Test Con ditions
ID = 250 µA
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
V GS = 10 V
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
3
ID = 3 A
Typ.
4
5
V
1.6
1.9
Ω
Ω
6.5
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/8
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 3 A
V GS = 0
Min.
Typ.
Max.
Unit
2.5
4.7
S
1250
145
16
pF
pF
pF
STW7NB80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t d(on)
tr
Turn-on Time
Rise Time
V DD = 400 V
R G = 4.7 Ω
ID = 3 A
V GS = 10 V
19
9
ns
ns
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 640 V
R G = 4.7 Ω
ID = 6 A VGS = 10 V
V GS = 10 V
33
11
14
47
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
Min.
11
9
16
V DD = 640 V I D = 6 A
R G = 4.7 Ω VGS = 10 V
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Con ditions
Min.
Typ.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
I SD = 6 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 6 A di/dt = 100 A/µs
T j = 150 o C
V DD = 100 V
V GS = 0
Max.
Unit
6.5
26
A
A
1.6
V
700
ns
5.8
µC
16.5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STW7NB80
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STW7NB80
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STW7NB80
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STW7NB80
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
P025P
7/8
STW7NB80
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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