DG441/442 Quad SPST CMOS Analog Switches Features Benefits Applications Less Signal Errors and Distortion Reduced Power Supply Requirements Faster Throughput Improved Reliability Reduced Pedestal Errors Simplifies Retrofit Simple Interfacing Low On-Resistance: 50 Low Leakage: 80 pA Low Power Consumption: 0.2 mW Fast Switching Action—tON: 150 ns Low Charge Injection—Q: –1 pC DG201A/DG202 Upgrades TTL/CMOS-Compatible Logic Single Supply Capability Audio Switching Battery Powered Systems Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Medical Instruments Description The DG441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The DG441 has a normally closed function. The DG442 has a normally open function. Combining low on-resistance (50 , typ.) with high speed (tON 150 ns, typ.), the DG441/442 are ideally suited for upgrading DG201A/202 sockets. Charge injection has been minimized on the drain for use in sample-and-hold circuits. To achieve high voltage ratings and superior switching performance, the DG441/442 are built on Siliconix’s high-voltage silicon-gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off. Functional Block Diagram and Pin Configuration IN1 IN2 D1 D2 S1 S2 V– GND S4 Dual-In-Line and SOIC DG441 V+ NC S3 D4 D3 IN4 IN3 S1 S2 V– V+ NC DG441 NC GND NC S4 S3 Truth Table Logic DG441 DG442 0 ON OFF 1 OFF ON Logic “0” 0.8 V Logic “1” 2.4 V Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70053. Siliconix S-52880—Rev. F, 28-Apr-97 1 DG441/442 Ordering Information Temp Range Package Part Number 16-Pin Plastic DIP –40 to 85_C DG441DJ DG442DJ DG441DY 16-Pin Narrow SOIC DG442DY DG441AK DG441AK/883 5962-9204101MEA 16-Pin CerDIP –55 to 125_C DG442AK DG442AK/883 5962-9204102MEA 5962-9204101M2A LCC-20 5962-9204102M2A Absolute Maximum Ratings V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . 100 mA Storage Temperature (AK Suffix) . . . . . . . . . . . . . . –65 to 150_C (DJ, DY Suffix) . . . . . . . . . . . –65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 16-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW 16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 12 mW/_C above 25_C Schematic Diagram (Typical Channel) V+ 5 V Reg INX V– Level Shift/ Drive V+ GND D V– Figure 1. 2 Siliconix S-52880—Rev. F, 28-Apr-97 DG441/442 Specificationsa for Dual Supplies Test Conditions Unless Specified Parameter Symbol V = 15 V, V V– V = –15 15 V V+ VIN = 2.4 V, 0.8 Vf Tempb Typc A Suffix D Suffix –55 to 125_C –40 to 85_C Mind Maxd Mind Maxd Unit 15 V 85 100 W Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off L k Leakage C Current ID(off) Full IS = –10 mA, VD = "8.5 V V+ = 13.5 V, V– = –13.5 V V+ = 16.5,, V– = –16.5 V VD = "15.5 15 5 V, V VS = #15.5 15 5 V –15 15 –15 Room Full 50 85 100 Room Full "0.01 –0.5 –20 0.5 20 –0.5 –5 0.5 5 Room Full "0.01 –0.5 –20 0.5 20 –0.5 –5 0.5 5 ID(on) V+ = 16.5 V, V– = –16.5 V VS = VD = "15.5 V Room Full "0.08 –0.5 –40 0.5 40 –0.5 –10 0.5 10 Input Current VIN Low IIL VIN under test = 0.8 V All Other = 2.4 V Full –0.01 –500 500 –500 500 Input Current VIN High IIH VIN under test = 2.4 V All Other = 0.8 V Full 0.01 –500 500 –500 500 Room 150 250 250 Room 90 120 120 Room 110 210 210 Room –1 Room 60 Room 100 Room 4 Channel On Leakage Current nA Digital Control nA Dynamic Characteristics Turn-On Time tON DG441 Turn-Off Time tOFF DG442 Charge Injectione Q Off Isolatione OIRR Crosstalke (Channel-to-Channel) XTALK Source Off Capacitancee CS(off) Drain Off Capacitancee Channel On Capacitancee CD(off) CD(on) RL = 1 kW , CL = 35 pF F VS = "10 V, See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W RL = 50 W , CL = 5 pF f = 1 MHz f = 1 MHz ns pC dB Room 4 VANALOG = 0 V Room 16 Full 15 V+ = 16.5 V, V– = –16.5 V VIN = 0 or 5 V Room Full –0.0001 –1 –5 –1 –5 Full –15 –100 –100 pF Power Supplies Positive Supply Current Negative Supply Current Ground Current I+ I– IGND 100 100 mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Siliconix S-52880—Rev. F, 28-Apr-97 3 DG441/442 Specificationsa for Single Supply Test Conditions Unless Otherwise Specified Parameter A Suffix D Suffix –55 to 125_C –40 to 85_C V = 12 V, V V– V =0V V+ VIN = 2.4 V, 0.8 Vf Tempb IS = –10 mA, VD = 3 V, 8 V V+ = 10.8 V Room Full 100 160 200 Symbol Typc Mind Maxd Mind 12 0 Maxd Unit 12 V 160 200 W Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance rDS(on) Full 0 Dynamic Characteristics Turn-On Time tON 300 450 450 tOFF RL = 1 kW , CL = 35 pF p VS = 8 V, V See S Figure Fi 2 Room Turn-Off Time Room 60 200 200 Q CL = 1 nF Vgen = 6 V, Rgen = 0 W Room 2 Full 15 Room Full –0.0001 –1 –100 –1 –100 Full –15 –100 –100 Charge Injection ns pC Power Supplies Positive Supply Current I+ Negative Supply Current I– Ground Current V+ = 16.5 V, V– = –16.5 V VIN = 0 or 5 V IGND 100 100 mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Typical Characteristics rDS(on) vs. VD and Power Supply Voltage rDS(on) vs. VD and Temperature 80 5 V 80 8 V 10 V 12 V 15 V 60 40 20 V 20 0 –20 –15 –10 –5 0 5 VD – Drain Voltage (V) 4 10 15 20 rDS(on) – Drain-Source On-Resistance ( W rDS(on) – Drain-Source On-Resistance ( W 100 V+ = 15 V V– = –15 V 70 60 125_C 50 85_C 40 25_C 30 20 10 0 –15 –55_C 0_C –40_C –10 –5 0 5 10 15 VD – Drain Voltage (V) Siliconix S-52880—Rev. F, 28-Apr-97 DG441/442 Typical Characteristics (Cont’d) rDS(on) vs. VD and Unipolar Power Supply Voltage rDS(on) vs. VD and Temperature (Single 12-V Supply) 140 V– = 0 V rDS(on) – Drain-Source On-Resistance ( rDS(on) – Drain-Source On-Resistance ( 300 250 V+ = 5 V 200 150 8V 100 10 V 12 V 15 V 50 20 V 0 120 125_C 85_C 100 80 25_C 60 –55_C 40 0_C –40_C 20 V+ = 12 V V– = 0 V 0 4 0 8 12 16 20 0 2 4 VD – Drain Voltage (V) 6 8 10 12 VD – Drain Voltage (V) Crosstalk and Off Isolation vs. Frequency Charge Injection vs. Source Voltage 50 140 CL = 1 nF 40 120 Crosstalk 30 100 V+ = 15 V V– = –15 V Q (pC) (–dB) 20 80 60 10 0 Off Isolation 40 V+ = 12 V V– = 0 V –10 V+ = 15 V V– = –15 V Ref. 10 dBm 20 –20 0 –30 100 1k 10 k 100 k 1M –5 –10 10 M f – Frequency (Hz) 5 0 10 VS – Source Voltage (V) Switching Threshold vs. Supply Voltage Source/Drain Leakage Currents 2.4 20 IS(off) , ID(off) 0 1.6 VIN (V) I S , I D (pA) –20 0.8 –40 ID(on) –60 V+ = 15 V V– = –15 V For I(off), VD = –VS –80 0 0 5 10 15 20 V+, V– Positive and Negative Supplies (V) Siliconix S-52880—Rev. F, 28-Apr-97 –100 –15 –10 –5 0 5 10 15 VD or VS – Drain or Source Voltage (V) 5 DG441/442 Typical Characteristics (Cont’d) Source/Drain Leakage Currents (Single 12-V Supply) Operating Voltage 50 10 0 –10 V+ (V) I S , I D (pA) V+ 44 40 IS(off) , ID(off) IS(on) + ID(on) –20 5 V – CMOS Compatible ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ D IN 30 V– 20 TTL Compatible VIN = 0.8 V, 2.4 V V+ = 12 V V– = 0 V For ID, VS = 0 For IS, VD = 0 –30 10 0 2 6 4 8 10 12 0 –20 –10 VD or VS – Drain or Source Voltage (V) 160 CMOS Compatible 3 0 –40 –30 –50 –40 V– – Negative Supply (V) Switching Time vs. Power Supply Voltage Switching Time vs. Power Supply Voltage 500 V– = 0 V 140 tON 400 120 tON 300 100 t (ns) t (ns) S 80 200 tOFF 60 100 40 20 10 tOFF 12 14 16 18 20 0 22 8 10 Supply Voltage (V) 12 14 16 18 20 22 VS – Source Voltage (V) Test Circuits +15 V Logic Input 3V 50% V+ 10 V S VO RL 1 k 3V GND 0V D IN tr <20 ns tf <20 ns 50% CL 35 pF tOFF Switch Input VS Switch Output 0V VO 80% 80% V– –15 V CL (includes fixture and stray capacitance) Note: tON Logic input waveform is inverted for DG442. Figure 2. Switching Time 6 Siliconix S-52880—Rev. F, 28-Apr-97 DG441/442 Test Circuits (Cont’d) +15 V DVO VO V+ Rg D S VO IN Vg INX OFF CL 1 nF 3V GND ON OFF (DG441) V– –15 V INX OFF ON Q = DVO x CL OFF (DG442) Figure 3. Charge Injection C = 1 mF tantalum in parallel with 0.01 mF ceramic +15 V C +15 V C V+ S1 VS D1 V+ Rg = 50 W 50 W IN1 VO D Rg = 50 W 0V, 2.4 V NC 0V, 2.4 V S VS S2 VO D2 0V, 2.4 V RL IN2 GND V– RL IN GND V– C C –15 V –15 V Off Isolation = 20 log VS XTALK Isolation = 20 log C = RF bypass VS VO VO Figure 4. Crosstalk Figure 5. Off Isolation +15 V C S V+ Meter IN HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D GND V– C –15 V Figure 6. Source/Drain Capacitances Siliconix S-52880—Rev. F, 28-Apr-97 7 DG441/442 Applications +24 V +15 V RL DG442 V+ I = 3A 150 +15 V VN0300L, M IN +15 V VIN 10 k +15 V GND 1/4 DG442 D S + – CH + – VOUT V– –15 V IN 0 = Load Off 1 = Load On Figure 7. Power MOSFET Driver VIN H = Sample L = Hold Figure 8. Open Loop Sample-and-Hold + – VOUT +15 V Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. V+ GAIN1 AV = 1 R1 90 k GAIN2 AV = 10 R2 5 k With SW4 Closed VOUT VIN GAIN3 AV = 20 R3 4 k GAIN4 AV = 100 R4 1 k = R1 + R2 + R3 + R4 = 100 R4 DG441 or DG442 V– GND –15 V Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier 8 Siliconix S-52880—Rev. F, 28-Apr-97