TEMIC DG201HSDY

DG201HS
High-Speed Quad SPST CMOS Analog Switch
Features
Benefits
Applications
Fast Switching—tON: 38 ns
Low On-Resistance: 25 Low Leakage: 100 pA
Low Charge Injection
TTL/CMOS Logic Compatible
Single Supply Compatibility
High Current Rating: –30 mA
Faster Throughput
Higher Accuracy
Reduced Pedestal Error
Upgrades Existing Designs
Simple Interfacing
Replaces HI201HS, ADG201HS
Space Savings (TSSOP)
Data Acquisition
Hi-Rel Systems
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Integrator Reset Circuits
Choppers
Gain Switching
Avionics
Description
The DG201HS is an improved monolithic device
containing four independent analog switches. It is
designed to provide high speed, low error switching of
analog signals. Combining low on-resistance (25 ) with
high speed (tON: 38 ns), the DG201HS is ideally suited for
high speed data acquisition requirements.
high-voltage silicon-gate process. An epitaxial layer
prevents latchup.
Each switch conducts equally well in both directions
when on, and blocks input voltages to the supply values,
when off.
To achieve high voltage ratings and superior switching
performance, the DG201HS is built on a proprietary
Functional Block Diagram and Pin Configuration
LCC
Dual-In-Line, SOIC and TSSOP
D1
IN1
1
16 IN2
D1
2
15 D2
S1
3
14 S2
V–
GND
Key
S4
6
11 S3
D4
7
10 D3
IN4
8
9
IN3
Top View
1
20
19
4
18
S2
V–
5
17
V+
NC
6
16
NC
0
ON
7
15
NC
1
OFF
8
14
S3
12 NC
5
2
D2
S1
13 V+
4
3
IN1 NC IN2
GND
S4
9
D4
10
11
12
IN4 NC IN3
Top View
Truth Table
Logic
Switch
Logic
g “0” 0.8 V
L i “1” 2.4
Logic
24V
13
D3
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70038.
Siliconix
E-77071—Rev. E, 01-Sep-97
1
DG201HS
Ordering Information
Temp Range
–40 to 85_C
–55 to 125_C
Package
Part Number
16-Pin Plastic DIP
DG201HSDJ
16-Pin Narrow SOIC
DG201HSDY
16-Pin TSSOP
DG201HSDQ
16-Pin CerDIP
DG201HSAK/883
LCC-20
DG201HSAZ/883
Absolute Maximum Ratings
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . (V–) –4 V to (V+) +4 V
16-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
16-Pin Narrow Body SOIC and TSSOPe . . . . . . . . . . . . . . . . 600 mW
LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . 100 mA
Storage Temperature
(A Suffix) . . . . . . . . . . . . . –65 to 150_C
(D Suffix) . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped
by internal diodes. Limit forward diode current to maximum
current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/_C above 75_C.
d. Derate 12 mW/_C above 75_C.
e. Derate 7.6 mW/_C above 75_C.
Schematic Diagram (Typical Channel)
V+
SX
5V
Reg
Level
Shift/
Drive
V–
V+
DX
INX
GND
V–
Figure 1.
2
Siliconix
E-77071—Rev. E, 01-Sep-97
DG201HS
Conditions Unless
Otherwise Specified
Parameter
Symbol
V = 15 V,
V V–
V = –15
15 V
V+
VIN = 3 V, 0.8 Vf
A Suffix
–55 to 125_C
Tempb
Typc
Mind
D Suffix
–40 to 85_C
Maxd Mind
Maxd
Unit
V+
V
50
75
W
Analog Switch
Analog Signal Rangee
Drain-Source On-Resistance
VANALOG
rDS(on)
Full
IS = –10 mA, VD = "8.5 V
V+ = 13.5 V, V– = –13.5 V
rDS(on) Match
IS(off)
Switch Off Leakage Current
ID(off)
Channel On Leakage Current
ID(on)
V+ = 16.5 V, V– = –16.5 V
VD = "15.5 V
VS = #15.5 V
V+ = 16.5 V, V– = –16.5 V
VS = VD = #15.5 V
V–
V+
V–
Room
Full
25
50
75
Room
3
Room
Full
0.1
–1
–60
1
60
–1
–20
1
20
Room
Full
0.1
–1
–60
1
60
–1
–20
1
20
Room
Full
0.1
–1
–60
1
60
–1
–20
1
20
%
nA
Digital Control
Input, High Voltage
VINH
Full
Input, Low Voltage
VINL
Full
Cin
Full
Input Capacitance
Input Current
IINL or
IINH
VIN under test = 0.8 V, 3 V
2.4
2.4
0.8
0.8
5
Full
V
pF
–1
1
–1
1
mA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
tON
tOFF1
RL = 1 kW , CL = 35 pF
VS = "10 V, VINH = 3 V
See Figure 3
tOFF2
Output Settling Time to 0.1%
ts
Room
Full
48
60
75
60
75
Room
Full
30
50
70
50
70
Room
150
Room
180
Q
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 W
Room
–5
OFF Isloation
OIRR
RL = 1 kW , CL = 10 pF
f = 100 kHz
Room
85
Crosstalk
(Channel-to-Channel)
XTALK
Any Other Channel Switches
RL = 1 kW , CL = 10 pF
f = 100 kHz
Room
100
Source Off Capacitance
CS(off)
Room
8
Drain Off Capacitance
CD(off)
Room
8
Room
30
Charge Injection
V S , VD = 0 V
V, f = 1 MHz
ns
pC
dB
Channel On Capacitance
CD(on)
Drain-to-Source Capacitance
CDS(off)
Room
0.5
I+
Room
Full
4.5
Room
Full
3.5
pF
Power Supplies
Positive Supply Current
Negative Supply Current
Power
Consumptionc
Siliconix
E-77071—Rev. E, 01-Sep-97
I–
PC
V V–
V = –15
15 V
V+ = 15 V,
VIN = 0 or 5 V
Full
10
10
mA
–6
–6
240
240
mW
3
DG201HS
Specificationsa for Single Supply
Conditions Unless
Otherwise Specified
Parameter
Symbol
V+ = 10.8 V to 16.5 V
V– = GND = 0 V
VIN = 3 V, 0.8 Vf
A Suffix
–55 to 125_C
Tempb
Typc
D Suffix
–40 to 85_C
Mind Maxd Mind Maxd
Unit
Analog Switch
Analog Signal Rangee
Drain-Source On-Resistance
VANALOG
rDS(on)
IS(off)
Switch Off Leakage Current
ID(off)
Channel On Leakage Current
ID(on) +
IS(on)
Full
IS = –10 mA, VD = 8.5 V
V+ = 10.8 V
V+ = 16.5 V,, VS = 0.5 V,, 10 V
VD = 10 V,
V 00.5
5V
V+ = 16.5 V, VD = 0.5 V, 10 V
0
V+
0
90
120
V+
V
90
120
W
Room
Full
65
Room
Full
0.1
–1
–60
1
60
–1
–20
1
20
Room
Full
0.1
–1
–60
1
60
–1
–20
1
20
Room
Full
0.1
–1
–60
1
60
–1
–20
1
20
nA
Digital Control
Input, High Voltage
VINH
Full
Input, Low Voltage
VINL
Full
Input Capacitance
Input Current
Cin
IINL or
IINH
Full
V+ = 16.5 V
VIN under test = 0.8 V, 3 V
2.4
2.4
0.8
0.8
5
Full
V
pF
–1
1
–1
1
mA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
tON
tOFF1
F VS = 2 V
RL = 1 kW , CL = 35 pF,
V= 10.8 V, See Figure 2
tOFF2
Output Settling Time to 0.1%
50
70
50
70
Room
Full
50
70
50
70
Room
150
Room
180
Q
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 W
Room
10
Off Isloation
OIRR
RL = 1 kW , CL = 10 pF
f = 100 kHz
Room
85
Crosstalk
(Channel-to-Channel)
XTALK
Any Other Channel Switches
RL = 1 kW , CL = 10 pF
f = 100 kHz
Room
100
Room
10
Room
10
Room
30
Charge Injection
ts
Room
Full
Source Off Capacitance
CS(off)
Drain Off Capacitance
CD(off)
Channel On Capacitance
CD(on)
f = 1 MHz
VANALOG = 0 V
ns
pC
dB
pF
Power Supplies
Positive Supply Current
Power
Consumptionc
I+
PC
V+ = 15 V,
V VIN = 0 or 5 V
Full
10
10
mA
Full
150
150
mW
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
4
Siliconix
E-77071—Rev. E, 01-Sep-97
DG201HS
Typical Characteristics
rDS(on) vs. VD and Power Supply Voltages
60
50
5 V
40
10 V
30
15 V
20
20 V
10
0
–20 –16 –12 –8
–4
0
4
8
12
16
rDS(on) vs. VD and Temperature
50
rDS(on) – Drain-Source On-Resistance ( W )
rDS(on) – Drain-Source On-Resistance ( W )
70
20
V+ = 15 V
V– = –15 V
40
125_C
85_C
30
25_C
20
0_C
–55_C
10
0
–15
–10
–5
VD – Drain Voltage (V)
rDS(on) vs. VD and Single Power Supply Voltages
10 nA
10
15
Leakage Currents vs. Temperature
V+ = 5 V
160
140
1 nA
120
Leakage
rDS(on) – Drain-Source On-Resistance ( W )
5
VD – Drain Voltage (V)
180
7V
100
80
10 V
60
ID(on)
100 pA
12 V
IS(off), ID(off)
15 V
40
20
0
0
2
4
6
8
10
12
14
10 pA
–60 –40 –20
16
0
VD – Drain Voltage (V)
2
50
Switching Time (ns)
55
1
0
4
60
80 100 120 140
45
tON
40
35
0.5
40
Switching Time vs. Power Supply Voltage
2.5
1.5
20
Temperature (_C)
Input Switching Threshold vs. Supply Voltage
VIN ( V )
0
tOFF
30
6
8
10 12 14 16 18 20
Positive/Negative Supplies (V)
Siliconix
E-77071—Rev. E, 01-Sep-97
4
6
8
10 12 14 16 18 20
Supply Voltage (V)
5
DG201HS
Typical Characteristics (Cont’d)
Switching Times vs. Temperature
V+ = 15 V
V– = –15 V
Switching Times vs. Single Supply Voltage
65
45
60
tON
55
t ON , t OFF (ns)
Switching Time (ns)
40
35
tOFF
30
50
45
tON
40
25
35
tOFF
20
–55
30
–25
0
25
50
75
100
4
125
6
Temperature (_C)
Switching Times vs. Temperature
14
16
18
20
Charge Injection vs. Source Voltage
V+ = 15 V, V– = 0 V
V+ = 10.8 V
V– = 0 V
10
Chargie Injection (pC)
Switching Time (ns)
12
20
40
tON
35
tOFF
30
0
–10
V+ = 15 V
V– = –15 V
–20
–30
25
20
–55
10
V+ – Positive Supply (V)
50
45
8
–25
0
25
50
75
100
–40
–15
125
–10
Temperature (_C)
–5
0
5
10
15
VS – Source Voltage (V)
Off Isolation vs. Frequency
120
V+ = 15 V
V– = –15 V
110
100
RL = 100 OIRR
90
80
70
RL = 1 k
60
50
40
10 k
100 k
1M
10 M
f – Frequency (Hz)
6
Siliconix
E-77071—Rev. E, 01-Sep-97
DG201HS
Test Circuits
+15 V
V+
D
S
10 V
VO
IN
RL
1 kW
3V
GND
V–
CL
35 pF
3V
Logic
Input
tr <20 ns
tf <20 ns
50%
0V
tOFF1
Switch
Input
VS
Switch
Output
VO
90%
10%
tON
–15 V
tOFF2
CL (includes fixture and stray capacitance)
RL
VO = VS
RL + rDS(on)
Figure 2. Switching Time
+15 V
V+
Rg
S
D
VO
IN
CL
1 nF
3V
GND
DVO
VO
INX
V–
SWON
OFF
Q = DVO x CL
–15 V
Figure 3. Charge Injection
+15 V
C
+15 V
V+
C
V+
S
VS
S1
VS
VO
D
Rg = 50 W
D1
50 W
IN1
0V, 2.4 V
Rg = 50 W
0V, 2.4 V
RL
IN
GND
V–
C
NC
0V, 2.4 V
D2
S2
VO
RL
IN2
GND
V–
C
–15 V
–15 V
Off Isolation = 20 log
Figure 4. Off Isolation
Siliconix
E-77071—Rev. E, 01-Sep-97
VS
VO
XTALK Isolation = 20 log
C = RF bypass
VS
VO
Figure 5. Crosstalk
7
DG201HS
Applications
A high-speed, low-glitch analog switch such as Siliconix’s DG201HS improves the accuracy and shortens the acquisition
and settling times of a sample-and-hold circuit.
Input
Buffer
DG201HS
JFET Buffer
OUTPUT
to A/D Converter
VANALOG
CH
(Polystyrene)
Si581
SAMPLE/HOLD
8
Siliconix
E-77071—Rev. E, 01-Sep-97