PRELIMINARY RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector Features General Description ■ Temperature compensated, integrated power detector with >20dB dynamic range ■ 41% WCDMA efficiency at +28dBm average output power 1920–1980MHz ■ Meets UMTS/WCDMA and HSDPA performance requirements ■ Compact Lead-free compliant LCC package– (3.0 x 3.0 x 1.0 mm nominal) ■ Single positive-supply operation and low power and shutdown modes ■ Low Vref (2.85V) compatible with advanced handset chipsets ■ Internally matched to 50Ω and DC blocked RF input/output The RMPA2271 Power Amplifier Module (PAM) is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting WCDMA/UMTS applications. Answering the call for integrated Power Detection, the RMPA2271 offers the ability to measure power output over a 20dB range. This feature eliminates the need of an external power detector and lossy directional coupler, improving system perfomance and reducing overall cost. Simple two-state Vmode control is all that is needed to change the PA optimization from high power to low power mode to minimize current usage. The 3 x 3 x 1.0mm LCC package fits into the tightest spaces available on handset boards and is footprint compatible with existing 3 x 3mm LCC power amplifiers. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild’s InGaP Heterojunction Bipolar Transistor (HBT) process. Device Functional Block Diagram 11 RF IN 22 Input Match Vmode 33 DC Bias Control Vref 44 ©2005 Fairchild Semiconductor Corporation RMPA2271 Rev. B MMIC Vcc1 Output Match Power Detector 1 88 Vcc2 77 RF OUT 66 GND 55 Pdet www.fairchildsemi.com RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector May 2005 PRELIMINARY Symbol Parameter VCC1, VCC2 Supply Voltages Vref Reference Voltage Vmode Power Control Voltage PIN RF Input Power TSTG Storage Temperature Ratings Units 5.0 V 2.6 to 3.5 V 3.5 V +10 dBm -55 to +150 °C Note: 1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics (1920 to 1980 MHz)1 Symbol f Parameter Operating Frequency Min Typ 1920 Max Units 1980 MHz Comments WCDMA Operation Gp Po PAEd Itot Pdet Power Gain Linear Output Power 27 dB 26 dB Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode ≥ 2.0V 28 dBm Vmode = 0V 16 dBm Vmode ≥ 2.0V PAEd (digital) @ +28dBm 41 % PAEd (digital) @ +16dBm 9 % Vmode ≥ 2.0V PAEd (digital) @ +16dBm 25 % Vmode ≥ 2.0V, Vcc = 1.4V High Power Total Current 450 mA Po = +28dBm, Vmode = 0V Low Power Total Current 130 mA Po = +16dBm, Vmode ≥ 2.0V Detector Output 1.4 V Po = +28dBm, Vmode = 0V 0.3 V Po = +16dBm, Vmode ≥ 2.0V Adjacent Channel Leakage Ratio Vmode = 0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH+1 DCDCH ACLR1 ±5.00MHz Offset 1920–1980MHz -40 dBc Po = +28dBm, Vmode = 0V -42 dBc Po = +16dBm, Vmode ≥ 2.0V ACLR2 ±10.00MHz Offset 1920–1980MHz -54 dBc Po = +28dBm, Vmode = 0V -66 dBc Po = +16dBm, Vmode ≥ 2.0V General Characteristics VSWR Input Impedance NF Noise Figure 2.0:1 4 dB dBm/Hz Po ≤ +28dBm, 2110 to 2170MHz Rx No Receive Band Noise Power 2fo – 5fo Harmonic Suppression3 -50 dBc Po ≤ +28dBm S Spurious Outputs2, 3 -60 dBc Load VSWR ≤ 5.0:1 Ruggedness with Load Mismatch3 10:1 Tc Case Operating Temperature -142 -30 85 No permanent damage °C DC Characteristics Iccq Quiescent Current 50 mA Vmode ≥ 2.0V Iref Reference Current 7 mA Po ≤ +28dBm Icc(off) Shutdown Leakage Current 1 µA No applied RF signal 5 Notes: 1. All parameters met at TC = +25°C, VCC = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted. 2 RMPA2271 Rev. B www.fairchildsemi.com RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector Absolute Ratings 1 PRELIMINARY Frequency and Temperature dependency RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=28dBm 32 45 31 44 30 43 29 42 PAE (%) Gain (dB) RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=28dBm 28 27 26 41 40 39 T=25°C T=85°C T=-30 °C 38 25 T=25°C 24 37 T=85°C 23 36 T=- 30°C 35 1920 22 1920 1950 1980 1950 Frequency (MHz) Frequency (MHz) RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=28dBm RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=28dBm -30 -40 -32 -42 -34 -44 T=25°C -46 T=85°C -48 T= -30°C ACLR2 (dBc) ACLR1 (dBc) 1980 -36 -38 -40 -42 -50 -52 -54 -44 T=25°C -46 T=85°C -56 -48 T= -30 °C -58 -60 -50 1920 1950 1920 1980 1950 Frequency (MHz) 1980 Frequency (MHz) Power Detector dependency RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vmode=0V, Freq=1950MHz, Temp=25°C RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vmode=0V, Freq=1950MHz, Vref=2.85V 1.8 1.8 1.6 1.6 1.4 1.4 T=25°C Pdet (Vdc) Pdet (Vdc) Vref=2.75V 1.2 Vref=2.85V 1 Vref=2.95V 0.8 0.6 1.2 T= 85°C 1 T=-30°C 0.8 0.6 0.4 0.4 0.2 0.2 0 0 -10 -5 0 5 10 15 20 25 -10 30 Pout (dBm) 0 5 10 15 20 25 30 Pout (dBm ) 3 RMPA2271 Rev. B -5 www.fairchildsemi.com RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector Typical Characteristics PRELIMINARY Due to the varying amplitude envelope of WCDMA signal, a filter is required at the Pdet pin in order to minimize the ripple noise of the detector output voltage (Pdet). RMPA2271 has no integrated filter for the Pdet pin. Therefore, an external low-pass filter, comprising a shunt resistor (R) and a shunt capacitor (C), is required to detect the WCDMA signal properly. The filter bandwidth is determined by the RC time constant of the filter, and can be reduced by increasing the values of the resistor and/or capacitor. A narrower filter bandwidth has the advantage of lower voltage ripple noise, but it comes at the expense of increased response time. A tradeoff needs to be made between the ripple noise and response time for the optimal system performance. 3.3 µF 1 Vcc1 SMA1 RF IN 8 2271 XYTT Z 2 50 ohm TRL 3.3 µF 1000 pF 1000 pF 3 7 Vcc2 50 ohm TRL SMA2 RF OUT 6 Vmode 4 Vref 1000 pF Pdet 5 0.1 µF 9 (package base) R C The detector output voltage (Pdet) range can be adjusted by the value of the external shunt resistor (R). The following figure shows the dependence of Pdet voltage as a function of R. The maximum Pdet voltage can be increased by raising the value of R. This provides the added flexibility to handset designers to change the detector range to meet the system requirements. Pdet (Vdc) RMPA2271 3x3 WCDMA PAM with Power Detector Vcc=3.4V, Vref=2.85V, Vmode=0V, Freq=1950MHz, Temp=25°C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -10 R=9.1k Ohm R=5.1k Ohm R=2.4k Ohm -5 0 5 10 15 20 25 30 Pout (dBm) It is recommended that the value of the resistor R is first determined depending on the desired detector output voltage range. Then the value of the shunt capacitor C is selected for the required detector output voltage ripple level, and response time. 4 RMPA2271 Rev. B www.fairchildsemi.com RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector Application Note PRELIMINARY In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers frequently operate at 10-20 dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for WCDMA modulation with excellent margin. High-efficiency DC-DC converters are now available to implement switched-voltage operation. With the PA module in low-power mode (Vmode = +2.0V) at+16dBm output power and supply voltages reduced from 3.4V nominal down to 1.2V, power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (Vcc = 1.2V) while maintaining a typical ACLR1 of –40dBc and ACLR2 of less than –54dBc. Operation at even lower levels of Vcc supply voltage are possible with a further restriction on the maximum RF output power. Recommended Operating Conditions Symbol Parameter Min Typ Units f Operating Frequency 1980 MHz Vcc1, Vcc2 Supply Voltage 3.0 3.4 4.2 V Vref Reference Voltage (Operating) (Shutdown) 2.7 0 2.85 3.1 0.5 V V Bias Control Voltage (Low-Power) (High-Power) 1.8 0 2.0 3.0 0.5 V V +28 +16 dBm dBm +85 °C Vmode Pout Tc 1920 Max Linear Output Power (High-Power) (Low-Power) Case Operating Temperature -30 DC Turn On Sequence: 1. Vcc1 = Vcc2 = 3.4V (typical) 2. Vref = 2.85V (typical) 3. High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2.0V (Pout < 16dBm) 5 RMPA2271 Rev. B www.fairchildsemi.com RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector Efficiency Improvement Applications PRELIMINARY 3 6 1 6 5 5 2 9 8 4 5 7 Material List Qty Item No. 1 1 F100088 Part Number Description Vendor 2 2 #142-0701-841 SMA Connector Johnson 6 3 #S1322-XX-ND RT Angle SGL M Header Digikey REF 4 Assembly, RMPA2271 Fairchild 3 5 GRM39X7R102K50V 1000 pF Capacitor (0603) Murata 3 5 (ALT) ECJ-1VB1H102K 1000 pF Capacitor (0603) Panasonic 2 6 C3215X5R1A335M 3.3 µF Capacitor (1206) TDK 1 7 GRM39Y5V104Z16V 0.1 µF Capacitor (0603) Murata 1 7 (ALT) 1 8 PC, Board Fairchild ECJ-1VB1C104K 0.1 µF Capacitor (0603) Panasonic GRM1885C1H101JA01D 100 pF Capacitor (0603) Murata 1 9 RCI-0603-5101J 5.1 KΩ Resistor (0603) IMS A/R 10 SN63 Solder Paste Indium Corp. A/R 11 SN96 Solder Paste Indium Corp. Evaluation Board Schematic 3.3 µF 1 Vcc1 2 50 ohm TRL 3 8 2271 XYTT Z SMA1 RF IN 3.3 µF 1000 pF 1000 pF 7 Vcc2 50 ohm TRL Vmode 1000 pF Vref 4 0.1 µF 6 RMPA2271 Rev. B Pdet 5 9 (package base) SMA2 RF OUT 6 5.1K Ω 100 pF www.fairchildsemi.com RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector Evaluation Board Layout PRELIMINARY I/O 1 INDICATOR TOP VIEW 8 1 3 Z +.100 3.00 –.050 mm SQ. 2271 XYTT 2 2 XY 271 T Z T 7 6 5 4 FRONT VIEW 1.10mm MAX. 4X R.25mm 4 5 3 6 2 7 1 8 2 BACK SIDE SODER MASK 0.40mm 1 2.60mm SEE DETAIL A 0.40mm 0.10mm 0.20mm 0.85mm 0.40mm 0.10mm DETAIL A TYP. 1.30mm BOTTOM VIEW Signal Description Pin # Signal Name 1 Vcc1 Description Supply Voltage to Input Stage 2 RF In 3 Vmode RF Input Signal 4 Vref 5 PDET Power detector output voltage 6 GND Ground 7 RF Out 8 Vcc2 Supply Voltage to Output Stage 9 GND Ground High Power/Low Power Switch Reference Voltage RF Output Signal 7 RMPA2271 Rev. B www.fairchildsemi.com RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector Package Outline PRELIMINARY CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. • Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking temperature. • Assemble the dry-baked devices within 7 days of removal from the oven. • During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C • If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. 8 RMPA2271 Rev. B www.fairchildsemi.com RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector Applications Information PRELIMINARY The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 9 RMPA2271 Rev. B www.fairchildsemi.com RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector TRADEMARKS