PRELIMINARY RMPA0966 i-Lo™ WCDMA Band V Power Amplifier Module tm Features General Description ■ 42% CDMA/WCDMA efficiency at +28dBm Pout The RMPA0966 Power Amplifier Module (PAM) is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting Cellular CDMA/WCDMA/HSDPA, AMPS and Wireless Local Loop (WLL) applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA0966 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (<+16 dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 60% at 16 dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4x4x1.0mm LCC package is pin-compatible and a drop-in replacement for last generation 4x4mm PAMs widely used today, minimizing the design time to apply this performance-enhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF’s InGaP Heterojunction Bipolar Transistor (HBT) process. ■ 21% CDMA/WCDMA efficiency (56mA total current) at ■ ■ ■ ■ ■ ■ ■ +16dBm Pout Meets HSDPA performance requirements 50% AMPS mode efficiency at +31dBm Pout Low quiescent current (Iccq): 15mA in low-power mode Single positive-supply operation with low power and shutdown modes • 3.4V typical Vcc operation • Low Vref (2.85V) compatible with advanced handset chipsets Compact Lead-free compliant LCC package – (4.0 X 4.0 x 1.0 mm nominal) Industry standard pinout Internally matched to 50 Ohms and DC blocked RF input/output Functional Block Diagram (Top View) MMIC 10 GND Vref 1 Vmode 2 GND 3 RF IN 4 Vcc1 5 BIAS/MODE SWITCH OUTPUT MATCH INPUT MATCH 9 GND 8 RF OUT 7 GND 6 Vcc2 11 (paddle ground on package bottom) ©2007 Fairchild Semiconductor Corporation RMPA0966 i-Lo™ Rev. B www.fairchildsemi.com RMPA0966 i-Lo™ WCDMA Band V Power Amplifier Module April 2007 PRELIMINARY Symbol Vcc1, Vcc2 Vref Parameter Value Supply Voltages Reference Voltage Vmode Units 5.0 V 2.6 to 3.5 V Power Control Voltage 3.5 V Pin RF Input Power +10 dBm Tstg Storage Temperature -55 to +150 °C Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics(2) Symbol f Parameter Comments Operating Frequency Min. Typ. 824 Max. Units 849 MHz CDMA/WCDMA OPERATION Gp Power Gain Po=+28 dBm; Vmode=0V Po=+16 dBm; Vmode≥2.0V Po Linear Output Power Vmode=0V Vmode≥2.0V PAEd (digital) @ +28dBm Vmode=0V 42 PAEd (digital) @ +16dBm Vmode≥2.0V 21 % High Power Total Current Po=+28 dBm, Vmode=0V 440 mA Low Power Total Current Po=+16 dBm, Vmode≥2.0V 56 mA PAEd Itot 30 20 dB dB 28 16 dBm dBm % CDMA Adjacent Channel Power Ratio IS-95 A/B Modulation ACPR1 ±885KHz Offset Po=+28 dBm; Vmode=0V Po=+16 dBm; Vmode≥2.0V -50 -55 dBc dBc ACPR2 ±1.98MHz Offset Po=+28 dBm; Vmode=0V Po=+16 dBm; Vmode≥2.0V -60 -65 dBc dBc Adjacent Channel Leakage Ratio WCDMA Modulation 3GPP 3.2 03-00 DPCCH +1 DCDCH ACLR1 ±5MHz Offset Po=+28 dBm; Vmode=0V Po=+16 dBm; Vmode≥2.0V -40 -45 dBc dBc ACLR2 ±10MHz Offset Po=+28 dBm; Vmode=0V Po=+16 dBm; Vmode≥2.0V -53 -60 dBc dBc Power Gain Po=+31 dBm 29 dB Power-Added Efficiency (analog) Po=+31 dBm 50 % WCDMA AMPS OPERATION Gp PAEa GENERAL CHARACTERISTICS VSWR NF Input Impedance 2.0:1 Noise Figure 2.5:1 4 dB Rx No Receive Band Noise Power Po≤+28 dBm; 869 to 894MHz 2fo-5fo Harmonic Suppression(4) Po≤+28 dBm -30 dBc Spurious Outputs(3)(4) Load VSWR≤5.0:1 -60 dBc Ruggedness w/ Load Mismatch(4) No permanent damage. 10:1 S Tc Case Operating Temperature -134 dBm/Hz -30 85 °C DC CHARACTERISTICS Iccq Quiescent Current Vmode≥2.0V 15 Iref Reference Current Po≤+28 dBm 2 Shutdown Leakage Current No applied RF signal 1 Icc(off) mA mA 5 µA Notes: 2. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted. 3. All phase angles. 4. Guaranteed by design. ©2007 Fairchild Semiconductor Corporation RMPA0966 i-Lo™ Rev. B www.fairchildsemi.com 2 RMPA0966 i-Lo™ WCDMA Band V Power Amplifier Module Absolute Maximum Ratings(1) PRELIMINARY Symbol Parameter Min. Typ. Max. Units f Operating Frequency 824 849 MHz Vcc1, Vcc2 Supply Voltage 3.0 3.4 4.2 V Vref Reference Voltage (Operating) (Shutdown) 2.7 0 2.85 3.1 0.5 V V Bias Control Voltage (Low-Power) (High-Power) 1.8 0 2.0 3.0 0.5 V V +28 dBm dBm +85 °C Vmode Pout Tc Linear Output Power (High-Power) (Low-Power) +16 Case Operating Temperature -30 DC Turn-On Sequence 1) Vcc1 = Vcc2 = 3.4V (typical) 2) Vref = 2.85V (typical) 3) High-Power: Vmode = 0V (Pout > 16 dBm) Low-Power: Vmode = 2V (Pout < 16 dBm) ©2007 Fairchild Semiconductor Corporation RMPA0966 i-Lo™ Rev. B www.fairchildsemi.com 3 RMPA0966 i-Lo™ WCDMA Band V Power Amplifier Module Recommended Operating Conditions PRELIMINARY 5 1 7 3 4 2 Z XYTT 0966 5 6 8 6 Materials List Qty Item No. Part Number Description Vendor 1 1 G657549-1 V2 PC Board Fairchild 2 2 #142-0701-841 SMA Connector Johnson #2340-5211TN Terminals 3M Assembly, RMPA0966 Fairchild GRM39X7R102K50V 1000pF Capacitor (0603) Murata Panasonic 8 3 Ref 4 2 5 2 5 (Alt) ECJ-1VB1H102K 1000pF Capacitor (0603) 2 6 C3216X5R1A335M 3.3µF Capacitor (1206) TDK 1 7 GRM39Y5V104Z16V 0.1µF Capacitor (0603) Murata 1 7 (Alt) ECJ-1VB1C104K 0.1µF Capacitor (0603) Panasonic 1 8 GRM39X7R331K50V 330pF Capacitor (0603) Murata A/R 9 SN63 Solder Paste Indium Corp. A/R 10 SN96 Solder Paste Indium Corp. Evaluation Board Schematic 0.1 µF 1000 pF Vref 1 Vmode Vcc1 3.3 µF ©2007 Fairchild Semiconductor Corporation RMPA0966 i-Lo™ Rev. B 6 5 1000 pF 8 11 50 Ohm TRL SMA2 RF OUT Z SMA1 RF IN 4 XYTT 50 Ohm TRL 3,7,9,10 0966 2 330 pF (package base) Vcc2 3.3 µF www.fairchildsemi.com 4 RMPA0966 i-Lo™ WCDMA Band V Power Amplifier Module Evaluation Board Layout PRELIMINARY I/O 1 INDICATOR TOP VIEW 2 9 8 7 0 Z T T XY 9 6 6 4 Z 3 XYTT 10 0966 (4.00mm +.100 –.050 ) SQUARE 1 6 5 1.1mm MAX. FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .10mm .30mm TYP. .10mm .85mm TYP. 11 3.65mm .40mm .45mm 2 1 1.08mm .18mm 1.84mm DETAIL A. TYP. BOTTOM VIEW Signal Descriptions Pin # Signal Name Description 1 Vref Reference Voltage 2 Vmode High Power/Low Power Mode Control 3 GND Ground 4 RF In RF Input Signal 5 Vcc1 Supply Voltage to Input Stage 6 Vcc2 Supply Voltage to Output Stage 7 GND Ground 8 RF Out RF Output Signal 9 GND Ground 10 GND Ground 11 GND Paddle Ground ©2007 Fairchild Semiconductor Corporation RMPA0966 i-Lo™ Rev. B www.fairchildsemi.com 5 RMPA0966 i-Lo™ WCDMA Band V Power Amplifier Module Package Outline PRELIMINARY CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. Reflow Profile • Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3°C/sec. • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200°C. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255–260°C, with a maximum limit of 260°C. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. • Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Device Usage: Fairchild recommends the following procedures prior to assembly. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices. • Assemble the devices within 7 days of removal from the dry pack. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15°C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed. • During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C • If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure per JEDEC J-STD-020 must be performed. Recommended Solder Reflow Profile Peak temp 260 +0/-5 °C 10 - 20 sec 260 Temperature (°C) Ramp-Up Rate 3 °C/sec max 217 200 Time above liquidus temp 60 - 150 sec 150 Preheat, 150 to 200 °C 60 - 180 sec 100 Ramp-Up Rate 3 °C/sec max Ramp-Down Rate 6 °C/sec max 50 25 Time 25 °C/sec to peak temp 6 minutes max Time (Sec) ©2007 Fairchild Semiconductor Corporation RMPA0966 i-Lo™ Rev. B www.fairchildsemi.com 6 RMPA0966 i-Lo™ WCDMA Band V Power Amplifier Module Applications Information PRELIMINARY ® ACEx Across the board. Around the world.¥ ActiveArray¥ Bottomless¥ Build it Now¥ CoolFET¥ CROSSVOLT¥ CTL™ Current Transfer Logic™ DOME¥ 2 E CMOS¥ ® EcoSPARK EnSigna¥ FACT Quiet Series™ ® FACT ® FAST FASTr¥ FPS¥ ® FRFET GlobalOptoisolator¥ GTO¥ Programmable Active Droop¥ ® QFET QS¥ QT Optoelectronics¥ Quiet Series¥ RapidConfigure¥ RapidConnect¥ ScalarPump¥ SMART START¥ ® SPM STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SyncFET™ TCM¥ ® The Power Franchise HiSeC¥ i-Lo¥ ImpliedDisconnect¥ IntelliMAX¥ ISOPLANAR¥ MICROCOUPLER¥ MicroPak¥ MICROWIRE¥ MSX¥ MSXPro¥ OCX¥ OCXPro¥ ® OPTOLOGIC ® OPTOPLANAR PACMAN¥ POP¥ ® Power220 ® Power247 PowerEdge¥ PowerSaver¥ ® PowerTrench ® TinyLogic TINYOPTO¥ TinyPower¥ TinyWire¥ TruTranslation¥ PSerDes¥ ® UHC UniFET¥ VCX¥ Wire¥ ™ TinyBoost¥ TinyBuck¥ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I24 ©2007 Fairchild Semiconductor Corporation RMPA0966 i-Lo™ Rev. B www.fairchildsemi.com 7 RMPA0966 i-Lo™ WCDMA Band V Power Amplifier Module TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.