TLP570,TLP571 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP570,TLP571 Programmable Controllers AC / DC−Input Module Solid State Relay Unit in mm The TOSHIBA TLP570 and TLP571 consist of a darlington connected photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. TLP570 is no−base internal connection for high−EMI environments. z Collector−emitter voltage: 35V (min.) z Current transfer ratio: 1000% (min.) z Isolation voltage: 2500Vrms (min.) z UL recognized: UL1577, file no. E67349 Pin Configurations (top view) TOSHIBA 1 11−7A8 2007-10-01 TLP570,TLP571 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 70 mA ΔIF / °C −0.7 mA / °C Peak forward current (100μs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 35 V Collector−base voltage (TLP571) VCBO 80 V Emitter−collector voltage VECO 7 V Emitter−base voltage (TLP571) VEBO 7 V Collector current IC 150 mA Power dissipation PC 150 mW ΔPC / °C −1.5 mW / °C Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10s) Tsold 260 °C Total package power dissipation PT 250 mW ΔPT / °C −2.5 mW / °C BVS 2500 Vrms Forward current Detector LED Forward current derating (Ta ≥ 25°C) Power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal: Pins1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommends Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 25 mA Collector current IC ― ― 50 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP570,TLP571 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR)CEO IC = 1 mA 35 ― ― V Emitter−collector breakdown voltage V(BR)ECO IE = 0.1 mA 7 ― ― V Collector−base breakdown voltage (TLP571) V(BR)CBO IC = 0.1 mA 80 ― ― V Emitter−base breakdown voltage (TLP571) V(BR)EBO IE = 0.1 mA 7 ― ― V VCE = 24 V ― 10 200 nA VCE = 24 V, Ta = 85°C ― ― 300 μA Collector dark current ICEO Collector dark current (TLP571) ICER VCE = 24 V, Ta = 85°C RBE = 10 MΩ ― 0.5 10 μA Collector dark current (TLP571) ICBO VCB = 10 V ― 0.01 ― nA DC forward current gain (TLP571) hFE VCE = 5 V, IC = 10 mA ― 50k ― ― Capacitance (collector to emitter) CCE V = 0, f = 1 MHz ― 10 ― pF MIn. Typ. Max. Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Base photo−current (TLP571) Collector−emitter saturation voltage Symbol Test Condition IC / IF IF = 1 mA, VCE = 1 V 1000 2000 ― % IC / IF (sat) IF = 10 mA, VCE = 1 V 500 ― ― % IPB IF = 1 mA, VCB = 1 V ― 2 ― μA IC = 10 mA, IF = 1 mA ― ― 1.0 IC = 100 mA, IF = 10 mA 0.3 ― 1.2 VCE (sat) 3 V 2007-10-01 TLP570,TLP571 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60% BVS Typ. Max. Unit ― 0.8 ― pF ― Ω 5×10 AC, 1 minute Isolation voltage Min. 10 10 14 2500 ― ― AC, 1 second, in oil ― 5000 ― DC, 1 minute, in oil ― 5000 ― Vdc Min. Typ. Max. Unit ― 40 ― ― 30 ― ― 45 ― ― 35 ― ― 5 ― ― 20 ― ― 100 ― ― 5 ― ― 15 ― ― 60 ― Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time tON Turn−off time tOFF Turn−on time tON Storage time ts Turn−off time tOFF Turn−on time tON Storage time ts Turn−off time tOFF Test Condition VCC = 10 V IC = 10 mA RL = 100Ω RL = 180Ω RBE = open VCC = 10 V, IF = 10 mA (Fig.1) RL = 180Ω RBE = 10MΩ (TLP571) VCC = 10 V, IF = 10 mA (Fig.1) μs μs μs Fig. 1 Switching time test circuit 4 2007-10-01 TLP570,TLP571 5 2007-10-01 TLP570,TLP571 6 2007-10-01 TLP570,TLP571 7 2007-10-01 TLP570,TLP571 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01