WSA753 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER ◇ Low Speed Switching ◇ Complement to WSC752 ABSOLUTE MAXIMUM RATINGS Characteristic L0sdn (Ta=25℃) Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector Current(DC) IC -2 A Collector Current(Pulse)* Ic -7 A Base Current IB -0.6 A Collector Power Dissipation(Tc=25℃) PC 15 W 1. Base Collector Power Dissipation(Ta=25℃) PC 1.2 W 2. Collector Junction Temperature Tj 150 ℃ 3. Emitter Storage Temperature Tstg -55~ 3 1 2 ℃ +150 *PW≤ 10ms,Duty Cycle≤ 50% ELECTRICAL CHARACTERISTICS Characteristic (Ta=25℃, unless otherwise specified) Symbol Test Condition Min TYP MAX Unit Collector-Base Breakdown Voltage BVCBO Ic=-100㎂ ,IE=0 -40 V Collector-Emitter Breakdown Voltage BVCEO Ic=-10mA, IB=0 -30 V Emitter-Base Breakdown Voltage BVEBO Ic=-1mA ,IC=0 -5 V Collector Cut-off Current ICBO VCB=-40V ,IE=0 -0.1 ㎂ Emitter Cut-off Current IEBO VEB=-5V ,IC=0 -0.1 ㎂ *DC Current Gain #hFE VCE=-2V, IC=-500mA VCE(sat)(1) IC=-2.0A, IB=-200㎃ VCE(sat)(2) IC=-1.5A, IB=-30㎃ *Collector-Emitter Saturation Voltage Current Gain Bandwith Product fT Output Capacitance Cob VCE=-5V,IC=-500mA VCB=-10V ,IE=0 f=1MHZ 100 400 -0.5 -0.8 -2 V 120 MHZ 13 pF * Pulse test:PW≤ 350us,Duty cycle≤ 2% # hFE Classification: Classification O Y G hFE 100~200 160~320 200~400 JAN. 2003 REV:00 copyright@wooseok s.tech corp. All rights reserved. 1 WSA753 Static Characteristics DC Current Gain 1000 2.2 VCE=-2V 2.0 300 hFE ,DC Current Gain Ic, Collector Current, A IB=-10mA 1.6 IB=-8mA 1.2 IB=-6mA 0.8 IB=-4mA IB=-3mA 0.4 100 30 10 IB=-2mA IB=-1mA 0 -4 -8 -1 -16 -12 -10 Vce,Collector-Emitter Voltage ,V VBE(sat) VCE(sat),Saturation Voltage,V Current Gain Bandwidth Product,fT(MHZ) Base Emitter Saturation Voltage Collector Emitter Saturation Voltage 、 IC=10IB - -1000 VBE(sat) -100 VCE(sat) -10 -1 -10 -100 -100 -1000 VCE=-5V 300 100 50 30 10 1 -0.01 -0.1 -10 16 Ic(A)Collector Current Pc(W),Power Dissipation 14 12 8 4 150 -1 IC,Collector Current,A Power Derating 100 -10000 Current Gain-Bandwidth Product 1000 IC,Collector Current,mA 50 -1000 IC,Collector Current,mA 200 Tc(℃), Case Temperature 250 Safe Operating Area Ic Max(Pulse) 1mS -3 10mS Ic Max(DC) 100uS -1 -0.3 -0.1 -0.01 -1 -3 -10 -30 -100 -300 -1000 VCE(V),Collector Emitter Voltage JAN. 2003 REV:00 copyright@wooseok s.tech corp. All rights reserved. 2