UTC-IC PZTA44

UTC PZTA44/ 45
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
*Collector-Emitter voltage:
VCEO=400V(PZTA44)
VCEO=350V(PZTA45)
*Collector current up to 300mA
*Complement to PZTA94/93
*Collector Dissipation:
Pc(max)=2W
1
2
3
4
APPLICATION
SOT-223
*Telephone switching
*High voltage switch
1:EMITTER 2,4:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
PARAMETER
Collector-base voltage
PZTA44
PZTA45
Collector-emitter voltage
PZTA44
PZTA45
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector dissipation(Tc=25°C)
Collector current
Junction Temperature
Storage Temperature
UTC
SYMBOL
RATING
VCBO
500
400
VCEO
400
350
6
625
2
300
150
-55 ~ +150
UNIT
V
V
VEBO
Pc
Pc
Ic
Tj
TSTG
UNISONIC TECHNOLOGIES CO. LTD
V
mW
W
mA
°C
°C
1
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UTC PZTA44/ 45
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tj=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-base breakdown voltage
PZTA44
PZTA45
Collector-emitter breakdown voltage
PZTA44
PZTA45
Emitter-base breakdown voltage
Collector cut-off current
PZTA44
PZTA45
Collector cut-off current
PZTA44
PZTA45
Emitter cut-off current
DC current gain(note)
BVCBO
Ic=100µA,IB=0
BVCEO
BVEBO
ICBO
MIN
TYP
MAX
500
400
V
400
350
6
V
Ic=1mA,IB=0
IE=100µA,Ic=0
V
µA
VCB=400V,IE=0
VCB=320V,IE=0
0.1
0.1
VCE=400V,IB=0
VCE=320V,IB=0
VEB=4V,Ic=0
VCE=10V,Ic=1mA
VCE=10V,Ic=10mA
VCE=10V,Ic=50mA
VCE=10V,Ic=100mA
Ic=1mA,IB=0.1mA
Ic=10mA,IB=1mA
Ic=50mA,IB=5mA
Ic=10mA,IB=1mA
VCE=20V,Ic=10mA,
f=100MHz
VCB=20V,IE=0
f=1MHz
0.5
0.5
0.1
µA
ICES
IEBO
hFE
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
Current gain bandwidth product
VBE(sat)
fT
Output capacitance
Cob
UNIT
40
50
45
40
µA
240
0.4
0.5
0.75
0.75
50
7
V
V
MHz
pF
Note:Pulse test:PW<300µs,Duty Cycle<2%
UTC
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NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTIC CURVES
Fig.1 DC current gain
Fig.2 Turn-on switching times
Fig.3 Turn-off switching times
2
10
140
VCE=10V
80
60
40
0
10
20
-20
0
10
1
10
2
10
3
10
Td
-1
10
0
10
4
10
1
10
Fig.4 Capacitance
0
10
Tf
-1
10
2
10
0
10
0.5
Collector-Emitter voltage(V)
Ta=25°
C
0.8
VBE(sat),Ic/IB =10
1
10
voltage(V)
Cib
0.6
VBE(ON),VCE=10V
0.4
Cob
VCE(sat),Ic/IB=10
0.2
0
10
-1
10
0
10
1
10
2
10
0
3
10
-1
10
Collector voltage(V)
0
10
1
10
2
10
Fig.7 High Frequency
current gain
0.1
0
Ta=25°
C
1
10
2
10
3
10
4
10
5
10
Ib, base current(µA)
0.1ms
C
C
3
10
1s
2
10
°
UTC
0.2
Valid Duty
Cycle<10%
25
Ic,Collector current(mA)
Ic=50mA
°
2
10
Ic=10mA
0.3
5
=2
Tc
0
10
1
10
Ic=1mA
1ms
3
10
=
Ta
Ic,Collector current(mA)
VCE=10V
f=10MHz
Ta=25° C
0
10
0.4
Fig.8 Safe operating area
4
10
-1
10
3
10
Ic,Collector current(mA)
2
10
1
10
2
10
Fig.6 Collector saturation region
1.0
2
10
1
10
Ic,Collector current(mA)
Fig.5 ON Voltage
3
10
Capacitance(pF)
Ts
Ic,Collector current(mA)
Ic,Collector current(mA)
-1
10
1
10
Tf
0
-40
Small signal current gain,H FE
Time(µs)
100
VCE=150V
Ic/IB=10
Ta=25° C
VCE=150V
Ic/IB=10
Ta=25° C
VBE(OFF)=4V
120
Time(µs)
HFE,DC current current gain
1
10
1
10
0
10
PZTA44
0
10
1
10
2
10
3
10
4
10
Collector voltage(V)
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NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
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