UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V(PZTA44) VCEO=350V(PZTA45) *Collector current up to 300mA *Complement to PZTA94/93 *Collector Dissipation: Pc(max)=2W 1 2 3 4 APPLICATION SOT-223 *Telephone switching *High voltage switch 1:EMITTER 2,4:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified) PARAMETER Collector-base voltage PZTA44 PZTA45 Collector-emitter voltage PZTA44 PZTA45 Emitter-base voltage Collector dissipation(Ta=25°C) Collector dissipation(Tc=25°C) Collector current Junction Temperature Storage Temperature UTC SYMBOL RATING VCBO 500 400 VCEO 400 350 6 625 2 300 150 -55 ~ +150 UNIT V V VEBO Pc Pc Ic Tj TSTG UNISONIC TECHNOLOGIES CO. LTD V mW W mA °C °C 1 QW-R207-003,A UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Tj=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-base breakdown voltage PZTA44 PZTA45 Collector-emitter breakdown voltage PZTA44 PZTA45 Emitter-base breakdown voltage Collector cut-off current PZTA44 PZTA45 Collector cut-off current PZTA44 PZTA45 Emitter cut-off current DC current gain(note) BVCBO Ic=100µA,IB=0 BVCEO BVEBO ICBO MIN TYP MAX 500 400 V 400 350 6 V Ic=1mA,IB=0 IE=100µA,Ic=0 V µA VCB=400V,IE=0 VCB=320V,IE=0 0.1 0.1 VCE=400V,IB=0 VCE=320V,IB=0 VEB=4V,Ic=0 VCE=10V,Ic=1mA VCE=10V,Ic=10mA VCE=10V,Ic=50mA VCE=10V,Ic=100mA Ic=1mA,IB=0.1mA Ic=10mA,IB=1mA Ic=50mA,IB=5mA Ic=10mA,IB=1mA VCE=20V,Ic=10mA, f=100MHz VCB=20V,IE=0 f=1MHz 0.5 0.5 0.1 µA ICES IEBO hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage Current gain bandwidth product VBE(sat) fT Output capacitance Cob UNIT 40 50 45 40 µA 240 0.4 0.5 0.75 0.75 50 7 V V MHz pF Note:Pulse test:PW<300µs,Duty Cycle<2% UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R207-003,A UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTIC CURVES Fig.1 DC current gain Fig.2 Turn-on switching times Fig.3 Turn-off switching times 2 10 140 VCE=10V 80 60 40 0 10 20 -20 0 10 1 10 2 10 3 10 Td -1 10 0 10 4 10 1 10 Fig.4 Capacitance 0 10 Tf -1 10 2 10 0 10 0.5 Collector-Emitter voltage(V) Ta=25° C 0.8 VBE(sat),Ic/IB =10 1 10 voltage(V) Cib 0.6 VBE(ON),VCE=10V 0.4 Cob VCE(sat),Ic/IB=10 0.2 0 10 -1 10 0 10 1 10 2 10 0 3 10 -1 10 Collector voltage(V) 0 10 1 10 2 10 Fig.7 High Frequency current gain 0.1 0 Ta=25° C 1 10 2 10 3 10 4 10 5 10 Ib, base current(µA) 0.1ms C C 3 10 1s 2 10 ° UTC 0.2 Valid Duty Cycle<10% 25 Ic,Collector current(mA) Ic=50mA ° 2 10 Ic=10mA 0.3 5 =2 Tc 0 10 1 10 Ic=1mA 1ms 3 10 = Ta Ic,Collector current(mA) VCE=10V f=10MHz Ta=25° C 0 10 0.4 Fig.8 Safe operating area 4 10 -1 10 3 10 Ic,Collector current(mA) 2 10 1 10 2 10 Fig.6 Collector saturation region 1.0 2 10 1 10 Ic,Collector current(mA) Fig.5 ON Voltage 3 10 Capacitance(pF) Ts Ic,Collector current(mA) Ic,Collector current(mA) -1 10 1 10 Tf 0 -40 Small signal current gain,H FE Time(µs) 100 VCE=150V Ic/IB=10 Ta=25° C VCE=150V Ic/IB=10 Ta=25° C VBE(OFF)=4V 120 Time(µs) HFE,DC current current gain 1 10 1 10 0 10 PZTA44 0 10 1 10 2 10 3 10 4 10 Collector voltage(V) UNISONIC TECHNOLOGIES CO. LTD 3 QW-R207-003,A UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R207-003,A