UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V *Low VCE(sat) : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA) 3 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C) PARAMETER SYMBOL LIMITS UNIT VCBO VCEO VEBO Ic Pc Tj TSTG -80 -80 -5 -0.5 0.2 150 -55 ~ +150 V V V A W °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob TEST CONDITIONS MIN Ic= -50μA TYP MAX -80 -80 -5 Ic= -2mA IE= -50μA VCB= -50V VEB= -4V Ic/IB= -0.5A/-50mA VCE= -3V,Ic= -0.1A VCE=-10V,IE= 50 mA, f=100MHz VCB= -10V, IE= 0 A, f=1MHz -0.2 120 -0.5 -0.5 -0.5 390 180 11 UNIT V V V μA μA V MHz pF CLASSIFICATION OF hFE RANK RANGE MARKING UTC Q 120-270 AKQ UNISONIC TECHNOLOGIES R 180-390 AKR CO. LTD 1 QW-R206-040,A UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CURVES Figure 1.Grounded Emitter PropagationCharacteristics -2 -1 -500m T a=25℃ T a= -25℃ -20m -10m -5m -2m -1m 0 500 T a=100℃ T a=25℃ 200 T a= -25℃ 100 50 20 Collector Saturation Voltage:V CE (sat) ( V) 10 -1m -10m -100m -1 Collector Current : Ic(A) Figure5.Collector-emitter Saturation Voltage vs.Collector Current (II) Ic/IB =10 -1 -500m -200m T a=100 ℃ -100m -50m T a=25℃ T a= -25℃ -20m -10m -1 UTC -10 -100 Collector Current : Ic(mA) -1A Collector Saturation Voltage:V CE (sat) ( V) Figure 3.DC Current Gain vs.Collector Current V CE= -3V T a=25℃ -45mA -40mA -0.4 -35mA -30mA -0.3 -25mA -20mA -5.0mA -1.5mA -1.0mA -0.2 -0.5mA -0.1 IB =0mA -0.4 -0.8 -1.2 -1.6 -2.0 Collector toEmitter Voltage:V CE (V) Figure4.Collector-emitter Saturation Voltage vs.Collector Current (I) 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base toEmitter Voltage:V BE (V) 1000 DC Current Gain:hFE Collector Current: Ic(A) T a=100℃ -200m -100m -50m -2 -0.5 V CE = -3V Collector Saturation Voltage:V CE(sat) ( V) Collector Current: Ic(mA) -10 -5 Figure 2.Grounded Emitter OutputCharacteristics -2 T a=25℃ -1 -500m -200m Ic/IB=50 -100m 20 -50m 10 -20m -10m -1 -2 -10 -100 -1A Collector Current : Ic(mA) Figure6.Collector-emitter Saturation Voltage vs.Collector Current (III) Ic/IB =20 -1 -500m -200m -100m T a=100℃ T a=25 ℃ T a= -25 ℃ -50m -20m -10m -1 -10 -100 Collector Current : Ic(mA) UNISONIC TECHNOLOGIES -1A CO. LTD 2 QW-R206-040,A UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR Ic/IB=50 -5 -2 -1 Ta=100℃ -500m Ta= 25℃ -200m Ta= -25℃ -100m -50m Figure 8. Gain Bandwidth Product vs.Emitter Current 1000 Transetion Frequency :fT (MHz) -10 Ta= 25℃ VCE= -10V 500 200 100 50 20 -20m -10m -1 1000 Emitter Input Capacitance :Cib (pF) Collector Output Capacitance :Cob (pF) Collector Saturation Voltage:VCE(sat) ( V) Figure 7.Collector-emitter Saturation Voltage vs.Collector Current (IV) -100 -10 Collector Current : Ic(mA) -1A 10 1m 10m 100m Emitter Current : IE (mA) 1 Figure9.Collector Output Capacitance vs.Collector-Base Voltage Emitter Input Capacitance vs.Emitter-Base Voltage Ta=25℃ f =1MHz IE=0A Ic=0A 500 200 100 50 20 10 5 2 1 -0.1 -1 -10 -100 Collector to Base Voltage:VCB (V) Emitter to Base Voltage:VEB (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R206-040,A