STC9014 NPN Silicon Transistor Audio Frequency Amplifier & High Frequency OSC. • • • • Complement to STC9015 Collector-Base Voltage : VCBO=60V High Current Gain Bandwidth Product : fT=300MHz (TYP) Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO VEBO Collector-Emitter Voltage 50 V Emitter-Base Voltage 5 IC V Collector Current 150 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 60 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 50 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 ICBO Collector Cut-off Current VCB=40V, IE=0 IEBO Emitter Cut-off Current VEB=3V, IC=0 hFE DC Current Gain VCE=6V, IC=1.0mA Typ. Max. Units V V V 40 0.1 µA 0.1 µA 700 VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.15 fT Current Gain Bandwidth Product VCE=6V, IC=10mA 300 0.3 MHz V Cob Output Capacitance VCB=6V, IE=0, f=1MHz 2.5 pF NF Noise Figure VCE=6V, IC=0.5mA f=1KHz, RS=500Ω 4.0 dB hFE Classification Classification A B C D hFE 40 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 1/2 Typical Characteristics STC9014 100 VCE = 6V IB = 400µ A IB = 350 µ A IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT 100 80 IB = 300µ A IB = 250µ A 60 IB = 200µ A IB = 150 µ A 40 IB = 100 µ A 20 IB = 50µ A 2 4 6 8 10 12 14 16 18 1 0.1 0.0 0 0 10 20 VCE[V], COLLECTOR-EMITTER VOLTAGE 0.6 0.8 1.0 1.2 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. Transfer Characteristic 1000 VCE = 6V hFE, DC CURRENT GAIN 0.4 VBE[V], BASE-EMITTER VOLTAGE Figure 1. Static Characteristic 100 10 10 IC = 10 IB V BE(sat) 1 0.1 V CE(sat) 0.01 1 10 100 1000 1 100 IE = 0 f = 1MHz 10 1 0.1 10 100 1000 Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Output Capacitance 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Figure 3. DC current Gain 1 10 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Cob [pF], CAPACITANCE 0.2 1000 VCE = 6V 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product 2/2