TA84005F/FG TOSHIBA Bipolar Linear IC Silicon Monolithic TA84005F/FG Three-Phase Wave Motor Driver IC The TA84005F/FG is a three-phase wave motor driver IC. Used with a three-phase sensorless controller (TB6548F/FG), the TA84005F/FG can provide PWM sensorless drive for three-phase brushless motors. Features • Built-in voltage detector • Overcurrent detector incorporated • Overheating protector incorporated • Multichip (MCH) structure • Rated at 25 V/1.0 A • Package: SSOP30-P-375-1.00 Uses Pch-MOS for the upper output power transistor Weight: 0.63 g (typ.) Note 1: This product has a multichip (MCP) structure utilizing Pch-MOS technology. The Pch-MOS structure is sensitive to electrostatic discharge and should therefore be handled with care. TA84005FG: The TA84005FG is Pb-free product. The following conditions apply to solderability: *Solderability 1. Use of Sn-63Pb solder bath *solder bath temperature = 230ºC *dipping time = 5 seconds *number of times = once *use of R-type flux 2. Use of Sn-3.0Ag-0.5Cu solder bath *solder bath temperature = 245ºC *dipping time = 5 seconds *number of times = once *use of R-type flux 1 2004-08-10 TA84005F/FG Block Diagram VCC IN_UP COMP N VM VZ Pin voltage detector IN_VP Pch-MOSFET × 3 IN_WP Control circuit IN_UN IN_VN OUT_U OUT_V Motor OUT_W IN_WN Overheating protector RF VISD1 ISD Overcurrent detector S_GND P_GND 2 VISD2 2004-08-10 TA84005F/FG Pin Assignment <TA84005F/FG> <TB6548F/FG> LV 1 30 OUT_V LW 2 29 VM1 OUT_W 3 28 OUT_U VM2 4 27 Lu VZ 5 26 NC LA0 1 24 WAVE LA1 2 23 OC PWM 3 22 OUT_WN RF1 6 25 RF2 CW_CCW 4 21 OUT_WP P_GND1 7 24 P_GND2 NC 5 20 NC NC 8 23 NC SEL_OUT 6 19 OUT_VN ISD 9 22 NC NC 7 18 NC IN_WN 10 21 VISD2 SEL_LAP 8 17 OUT_VP IN_WP 11 20 VISD1 NC 9 16 NC IN_VN 12 19 COMP XT 10 15 OUT_UN IN_VP 13 18 N XTin 11 14 OUT_UP IN_UN 14 17 VCC GND 12 13 VDD IN_UP 15 16 S_GND 3 2004-08-10 TA84005F/FG Pin Description Pin No. Pin Symbol Pin Function Remarks 1 LV V-phase output upper Pch gate pin Leave open. 2 LW W-phase output upper Pch gate pin Leave open. 3 OUT_W W-phase output pin Connects motor. 4 VM2 Motor drive power supply pin Externally connects to VM1. 5 VZ Reference voltage pin Used for the VM drop circuit reference voltage when VM (max) > = 22 V. Left open when VM (max) < = 22 V. 6 RF1 Output current detection pin Externally connected to RF2. (Connect a detection resistor between this pin and GND.) 7 P_GND1 Power GND pin Externally connects to P_GND2. 8 NC Not connected 9 ISD Overcurrent detection output pin Connects to the OC pin of the TB6548F/FG. 10 IN_WN W-phase upper drive input pin Connects to the OUT_WN pin of the TB6548F/FG; incorporates pull-down resistor. 11 IN_WP W-phase lower drive input pin Connects to the OUT_WP pin of the TB6548F/FG; incorporates pull-up resistor. 12 IN_VN V-phase upper drive input pin Connects to the OUT_VN pin of the TB6548F/FG; incorporates pull-down resistor. 13 IN_VP V-phase lower drive input pin Connects to the OUT_VP pin of the TB6548F/FG; incorporates pull-up resistor. 14 IN_UN U-phase upper drive input pin Connects to the OUT_UN pin of the TB6548F/FG; incorporates pull-down resistor. 15 IN_UP U-phase lower drive input pin Connects to the OUT_UP pin of the TB6548F/FG; incorporates pull-up resistor. 16 S_GND Signal GND pin 17 VCC ⎯ ⎯ Control power supply pin VCC (opr) = 4.5 to 5.5 V 18 N Mid-point pin Mid-point potential confirmation pin; left open 19 COMP Location detection signal output pin Connects to the WAVE pin of the TB6548F/FG. 20 VISD1 Overcurrent detection input pin 1 Externally connects to the RF2 pin. 21 VISD2 Overcurrent detection input pin 2 Connect a capacitor between this pin and GND. Internal resistor and capacitor used to reduce noise. 22 NC Not connected ⎯ 23 NC Not connected ⎯ 24 P_GND2 Power GND pin Externally connects to the P_GND1 pin. 25 RF2 Output current detection pin Externally connects to the RF1 pin. Connect a detection resistor between this pin and GND. 26 NC Not connected 27 Lu U-phase upper output Pch gate pin Leave open. 28 OUT_U U-phase output pin Connects motor. Motor drive power supply pin Externally connects to the VM2 pin. V-phase output pin Connects the motor. 29 VM1 30 OUT_V ⎯ 4 2004-08-10 TA84005F/FG Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Motor power supply voltage VM 25 V Control power supply voltage VCC 7 V IO 1.0 A/phase Input voltage VIN GND − 0.3 ~VCC + 0.3 V V Power dissipation Pd Output current 1.1 (Note 2) W 1.4 (Note 3) Operating temperature Topr −30~85 °C Storage temperature Tstg −55~150 °C Note 2: Standalone Note 3: When mounted on a PCB (50 × 50 × 1.6 mm; Cu area, 30%) Recommended Operating Conditions (Ta = −30~85°C) Symbol Test Circuit Test Conditions Min Typ. Max Unit Control power supply voltage VCC ⎯ ⎯ 4.5 5.0 5.5 V Motor power supply voltage VM ⎯ ⎯ 10 20 22 V Output current IO ⎯ ⎯ ⎯ ⎯ 0.5 A Input voltage VIN ⎯ ⎯ GND ⎯ VCC V fchop ⎯ ⎯ 15 20 50 kHz IZ ⎯ ⎯ ⎯ ⎯ 1.0 mA Characteristic Chopping frequency Vz current 5 2004-08-10 TA84005F/FG Electrical Characteristics (Ta = 25°C, VCC = 5 V, VM = 20 V) Characteristic Symbol Test Circuit VIN (H) 1 VIN (L) 1 IIN1 (H) 2 IIN2 (H) 2 IIN1 (L) 2 IIN2 (L) 2 ICC1 3 ICC2 3 ICC3 Min Typ. Max 2.5 ⎯ 5.0 GND ⎯ 0.8 ⎯ ⎯ 20 300 450 600 ⎯ ⎯ 1 300 450 600 Upper phase 1 ON, lower phase 1 ON, output open ⎯ 8.0 13.0 Upper phase 2 ON, synchronous regeneration mode, output open ⎯ 7.0 12.0 3 All phases OFF, output open ⎯ 6.0 11 IM1 3 Upper phase 1 ON, lower phase 1 ON, output open ⎯ 2.0 3.5 IM2 3 Upper phase 2 ON, synchronous regeneration mode, output open ⎯ 2.0 3.5 IM3 3 All phases OFF, output open ⎯ 1.8 3.2 VSAT 4 IO = 0.5 A ⎯ 1.0 1.5 V Upper output ON-resistance Ron 5 IO = ±0.5 A, bi-directional ⎯ 0.65 1.0 Ω Lower diode forward voltage VF (L) 6 IF = 0.5 A ⎯ 1.2 1.6 V Upper diode forward voltage VF (H) 7 IF = 0.5 A ⎯ 0.9 1.4 V VN 8 9.88 10.4 10.92 V VCMP 9 9.88 10.4 10.92 V VOL (CMP) 9 GND ⎯ 0.5 V ROH (CMP) 9 ⎯ 7 10 13 kΩ ⎯ 0.45 0.5 0.55 V 4.5 ⎯ 5.0 V 14 20 26 kΩ 20.9 22.0 23.1 V ⎯ 180 ⎯ °C ⎯ ⎯ 30 ⎯ °C ⎯ 0 100 ⎯ ⎯ 0 50 Input voltage Lower output saturation voltage Mid-point voltage Pin voltage detection level Pin voltage detection output voltage Overcurrent detection level IN_UP, IN_VP, IV_WP IN_UN, IN_VN, IN_WN ⎯ VIN = 5 V, IN_UP, IN_VP, IN_WP VIN = 5 V, IN_UN, IN_VN, IN_WN Input current Power supply current Test Conditions VIN = GND, VIN = GND, µA IN_UP, IN_VP, IN_WP VM = 20 V VRF = 0 V VM = 20 V VRF = 0 V IOL = 1 mA VRF 10 10 ROL (ISD) 10 Reference voltage VZ 11 IZ = 0.5 mA, Tj = 25°C TSD temperature TSD ⎯ Tj ∆T ⎯ IL (H) 12 IL (L) 13 Overcurrent detection output voltage Output leakage current V IN_UN, IN_VN, IN_WN VOH (ISD) TSD hysteresis width Unit IOH = 0.1 mA ⎯ Pch-MOS 6 mA µA 2004-08-10 TA84005F/FG Functions Input Output IN-P IN-N Upper Power Transistor Lower Power Transistor High High ON OFF High Low High ON ON Prohibit mode High Low OFF OFF High impedance Low Low OFF ON Low (Note 4) Connecting the TB6548F/FG (or TB6537P/PG/F/FG) to the TA84005F/FG allows electric motors to be controlled by PWM. Note 4: In Prohibit Mode, the output power transistor goes into vertical ON mode and through current may damage the circuit. Do not use the TA84005F/FG in this mode. This mode is not actuated when the TA84005F/FG is connected to the TB6548F/FG or TB6537P/PG/F/FG, but can be triggered by input noise during standalone testing. <Schematic> VM OUT-P IN-P Low active TB6548F/FG (TB6537P/PG /F/FG) OUT OUT-N IN-N High active <Lower PWM> Connecting the TA84005F/FG to the TB6537P/PG/F/FG controls the lower PWM. At chopping ON, the diagonally output power transistors are ON. At chopping OFF, the lower transistor is OFF, regenerating the motor current via the upper diode (incorporating the Pch-MOS). VM ON OFF <Coil current route> Pch-MOS When chopping is ON VOUT When chopping is OFF OFF 7 2004-08-10 TA84005F/FG <Synchronous rectification PWM> Connecting the TA84005F/FG to the TB6548F/FG controls the synchronous rectification PWM. At chopping OFF, power dissipation is reduced by operating the Pch-MOS in reverse and regenerating the motor’s current. VM ON <Coil current route> Pch-MOS When chopping is ON VOUT When chopping is OFF OFF <Timing Chart> When controlling synchronous rectification PWM IN-P IN-N VOUT 8 2004-08-10 TA84005F/FG Equivalent Circuit <Overcurrent detector (RF, VISD, ISD) > • Input to the VISD1 pin the voltage generated at the overcurrent detection resistor RF connected to the RF pin. • At chopping ON, voltage spikes at the RF pin as a result of the Pch-MOS output capacitance. To cancel the spike, externally connect a capacitor to the VISD2 pin (10 kΩ resistor built-in). • If the VISD2 pin voltage exceeds the internal reference voltage (VRF = 0.5 V), the overcurrent detection output ISD pin goes High. Inputting the ISD pin output to the TB6537P/PG/F/FG or TB6548F/FG OC pin limits the PWM ON time and the current at the ISD output rising edge. VCC 0.5 V (typ.) 20 kΩ (typ.) VISD1 10 kΩ VISD2 External capacitor ISD <Pin voltage detector (COMP) > The pin voltage detector outputs the result of OR-ing the output pin voltages and the virtual mid-point N voltage to determine the majority. (If at least two phases of the three-phase output are greater than the mid-point potential, the detector outputs “Low”. Conversely, if at least two phases are smaller than the mid-point potential, the circuit outputs “High”.) 10 kΩ (typ.) • Majority-determining OR data VCC COMP GND • With the virtual mid-point potential VN used as the reference for the pin voltage detection circuit considered as half the voltage applied to the motor, then VN = [ (VM − Ron (upper) *IO) − (Vsat (lower) + VRF) ]/2 + Vsat + VRF = [VM − VRF + Vsat (lower) − Ron (upper) *IO]/2 + VRF. Here, assuming that Vsat (lower) − Ron (upper) *IO ∼ − VF , we have set the following: VN = [VM − VRF + VF]/2 + VRF <Overheating protector> • Automatic restoration TSD (ON) = 180°C • Temperature hysteresis supported TSD (HYS) = 30°C 9 TSD (OFF) = 150°C 2004-08-10 TA84005F/FG <Example of 24 V support> • Incorporate a Zener diode and make the external connections shown in the diagram below. Design the device so that the voltage applied to the VM is clamped at 22 V below the maximum operating power supply voltage. • A capacitor is needed to control the effect of the counter-electromotive force. Verification is particularly necessary when the motor current is large at startup or at shutdown (output OFF). 24 V Vz pin fluctuation width 20.9 V to 23.1 V Due to the temperature characteristics (3.5 × 3 mV/°C), the following applies at an ambient temperature of 85°C: VZ Vz (max) = 23.1 + (85 − 25) × 3.5 × 3 mV = 23.73 V By taking the measures shown in the diagram on the right to bring the voltage down to 22 V, the following becomes the case: Vz (max) = 23.73 − (0.7 − 2 mV × (85 − 25) ) × 3 = 21.99 V 10 VM 2004-08-10 TA84005F/FG Example of Application Circuit VDD = 5 V VM = 20 V Location detection signal WAVE COMP PWM signal M TB6548F/FG TA84005F/FG RF ISD Overcurrent detection signal GND S_GND P_GND VISD2 1Ω OC 0.01 µF VISD1 Note 5: A short circuit between the outputs, or between output and supply or ground may damage the device. Design the output, VCC, VS, and GND lines so that short circuits do not occur. 11 2004-08-10 TA84005F/FG 5V 20 V Test Circuit 1: VIN (H), VIN (L) 17 1 2 27 4 29 19 10 18 11 500 Ω 28 12 TA84005F/FG 13 30 14 3 V 15 V V 6 0.8 V 2.5 V 25 16 7 24 9 20 21 Input VIN = 0.8 V/2.5 V, measure the output voltage, and test the function. 5V 20 V Test Circuit 2: IIN (H), IIN (L) 17 1 2 27 4 29 19 10 18 11 28 12 TA84005F/FG 13 30 14 3 15 6 25 5V A A 16 7 24 9 12 20 21 2004-08-10 TA84005F/FG Test Circuit 3: ICC1, ICC2, ICC3, IM1, IM2, IM3 ICC IM A 17 1 2 27 20 V 5V A 4 29 19 10 18 11 28 12 TA84005F/FG 13 30 14 3 15 6 0.8 V 2.5 V 25 16 7 24 9 20 21 ICC1, IM1: upper phase 1 ON, lower phase 1 ON (e.g., U-phase: H; V-phase: L; W-phase: Z) ICC2, IM2: upper phase 1 ON, synchronous regeneration mode (e.g., U-phase: H; V-phase: H; W-phase: Z) ICC3, IM3: all phases OFF 5V 20 V Test Circuit 4: Vsat 17 1 2 27 4 29 19 10 18 11 28 12 TA84005F/FG 30 14 3 Vsat V 15 6 0.5 A 13 25 16 7 24 9 13 20 21 2004-08-10 TA84005F/FG 5V 20 V Test Circuit 5: Ron 1 2 27 4 29 19 10 ±0.5 A 17 V1 V 18 11 28 12 TA84005F/FG 13 30 Ron = V1/0.5 14 3 15 6 25 5V 16 7 24 9 20 21 Test Circuit 6: VF (L) 17 1 2 27 4 29 19 10 18 11 28 12 TA84005F/FG 30 14 3 VF V 15 6 0.5 A 13 25 16 7 24 9 14 20 21 2004-08-10 TA84005F/FG Test Circuit 7: VF (H) 1 2 27 4 29 19 10 VF V 18 0.5 A 17 11 28 12 TA84005F/FG 13 30 14 3 15 6 25 16 7 24 9 20 21 5V 20 V Test Circuit 8: VN 17 1 2 27 4 29 19 10 18 11 28 12 VN V TA84005F/FG 13 30 14 3 15 6 25 16 7 24 9 15 20 21 2004-08-10 TA84005F/FG 5V 20 V Test Circuit 9: VCMP, VOL (CMP), ROH (CMP) 17 1 2 27 4 29 10 A SW1 19 18 V V2 B 10 kΩ 11 28 12 TA84005F/FG 13 30 14 3 15 6 (1) (2) 7 24 9 20 9.88 V 5V 16 10.92 V 25 21 Where output phase 2 is High (10.92 V) and phase 1 is Low (= 9.88 V), set SW1 = A and measure V2 = VOL (CMP). Where output phase 1 is High (10.92 V) and phase 2 is Low (9.88 V), set SW1 = B and confirm that 5 V × 10 kΩ/(10 kΩ + 13 kΩ) < V2 < 5 V × 10 kΩ/(10 kΩ + 7 kΩ). 5V 20 V Test Circuit 10: VRF, VOH (ISD), ROL (ISD) 17 1 2 27 4 29 19 10 18 11 28 12 TA84005F/FG 13 30 14 6 25 7 24 9 20 21 SW2 V V3 (1) (2) A 0.1 mA B 100 kΩ 5V 16 0.55 V 15 0.45 V 3 Where VISD = 0.55 V, set SW2 = A and measure V3 = VOH (ISD). Where VISD = 0.45 V, set SW2 = B and confirm that 5 V × 14 kΩ/(100 kΩ + 14 kΩ) < V3 < 5 V × 26 kΩ/(26 kΩ + 100 kΩ). 16 2004-08-10 TA84005F/FG Test Circuit 11: VZ V 17 1 2 27 5 0.5 mA VZ 4 29 19 10 18 11 28 12 TA84005F/FG 13 30 14 3 15 6 25 16 7 24 9 20 21 5V 25 V Test Circuit 12: IL (H) 17 1 2 27 4 29 19 10 Connect N pin to −0.3 V 18 11 28 12 TA84005F/FG 13 30 14 3 A 15 6 5V 25 16 7 24 9 17 20 21 2004-08-10 TA84005F/FG 5V 25 V Test Circuit Test Circuit 13: IL (L) 17 1 2 27 4 29 19 10 18 11 A 28 12 TA84005F/FG 13 30 14 3 15 6 5V 25 16 7 24 9 18 20 21 2004-08-10 TA84005F/FG Package Dimensions Weight: 0.63 g (typ.) 19 2004-08-10 TA84005F/FG Notes on Contents 1. Block Diagrams Some functional blocks, circuits, or constants may be omitted or simplified in the block diagram for explanatory purposes. 2. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 3. Timing Charts Timing charts may be simplified for explanatory purposes. 4. Maximum Ratings The absolute maximum ratings of a semiconductor device are a set of specified parameter values that must not be exceeded during operation, even for an instant. If any of these ratings are exceeded during operation, the electrical characteristics of the device may be irreparably altered and the reliability and lifetime of the device can no longer be guaranteed. Moreover, any exceeding of the ratings during operation may cause breakdown, damage and/or degradation in other equipment. Applications using the device should be designed so that no maximum rating will ever be exceeded under any operating conditions. Before using, creating and/or producing designs, refer to and comply with the precautions and conditions set forth in this document. 5. Application Circuits The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially in the phase of mass production design. In furnishing these examples of application circuits, Toshiba does not grant the use of any industrial property rights. 6. Test Circuits Components in test circuits are used only to obtain and confirm device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure in application equipment. Handling of the IC Ensure that the product is installed correctly to prevent breakdown, damage and/or degradation in the product or equipment. Overcurrent Protection and Heat Protection Circuits These protection functions are intended only as a temporary means of preventing output short circuits or other abnormal conditions and are not guaranteed to prevent damage to the IC. If the guaranteed operating ranges of this product are exceeded, these protection features may not operate and some output short circuits may result in the IC being damaged. The overcurrent protection feature is intended to protect the IC from temporary short circuits only. Short circuits persisting over longer periods may cause excessive stress and damage the IC. Systems should be configured so that any overcurrent condition will be eliminated as soon as possible. Counter-electromotive Force When the motor reverses or stops, the effect of counter-electromotive force may cause the current to flow to the power source. If the power supply is not equipped with sink capability, the power and output pins may exceed the maximum rating. The counter-electromotive force of the motor will vary depending on the conditions of use and the features of the motor. Therefore make sure there will be no damage to or operational problem in the IC, and no damage to or operational errors in peripheral circuits caused by counter-electromotive force. 20 2004-08-10 TA84005F/FG RESTRICTIONS ON PRODUCT USE 030619EBA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 21 2004-08-10