TOSHIBA TA84005F

TA84005F/FG
TOSHIBA Bipolar Linear IC Silicon Monolithic
TA84005F/FG
Three-Phase Wave Motor Driver IC
The TA84005F/FG is a three-phase wave motor driver IC. Used with a three-phase sensorless controller
(TB6548F/FG), the TA84005F/FG can provide PWM sensorless
drive for three-phase brushless motors.
Features
•
Built-in voltage detector
•
Overcurrent detector incorporated
•
Overheating protector incorporated
•
Multichip (MCH) structure
•
Rated at 25 V/1.0 A
•
Package: SSOP30-P-375-1.00
Uses Pch-MOS for the upper output power transistor
Weight: 0.63 g (typ.)
Note 1: This product has a multichip (MCP) structure utilizing Pch-MOS technology. The Pch-MOS structure is
sensitive to electrostatic discharge and should therefore be handled with care.
TA84005FG:
The TA84005FG is Pb-free product.
The following conditions apply to solderability:
*Solderability
1. Use of Sn-63Pb solder bath
*solder bath temperature = 230ºC
*dipping time = 5 seconds
*number of times = once
*use of R-type flux
2. Use of Sn-3.0Ag-0.5Cu solder bath
*solder bath temperature = 245ºC
*dipping time = 5 seconds
*number of times = once
*use of R-type flux
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2004-08-10
TA84005F/FG
Block Diagram
VCC
IN_UP
COMP
N
VM
VZ
Pin voltage detector
IN_VP
Pch-MOSFET × 3
IN_WP
Control circuit
IN_UN
IN_VN
OUT_U
OUT_V
Motor
OUT_W
IN_WN
Overheating
protector
RF
VISD1
ISD
Overcurrent
detector
S_GND
P_GND
2
VISD2
2004-08-10
TA84005F/FG
Pin Assignment
<TA84005F/FG>
<TB6548F/FG>
LV
1
30
OUT_V
LW
2
29
VM1
OUT_W
3
28
OUT_U
VM2
4
27
Lu
VZ
5
26
NC
LA0
1
24
WAVE
LA1
2
23
OC
PWM
3
22
OUT_WN
RF1
6
25
RF2
CW_CCW
4
21
OUT_WP
P_GND1
7
24
P_GND2
NC
5
20
NC
NC
8
23
NC
SEL_OUT
6
19
OUT_VN
ISD
9
22
NC
NC
7
18
NC
IN_WN
10
21
VISD2
SEL_LAP
8
17
OUT_VP
IN_WP
11
20
VISD1
NC
9
16
NC
IN_VN
12
19
COMP
XT
10
15
OUT_UN
IN_VP
13
18
N
XTin
11
14
OUT_UP
IN_UN
14
17
VCC
GND
12
13
VDD
IN_UP
15
16
S_GND
3
2004-08-10
TA84005F/FG
Pin Description
Pin
No.
Pin
Symbol
Pin Function
Remarks
1
LV
V-phase output upper Pch gate pin
Leave open.
2
LW
W-phase output upper Pch gate pin
Leave open.
3
OUT_W
W-phase output pin
Connects motor.
4
VM2
Motor drive power supply pin
Externally connects to VM1.
5
VZ
Reference voltage pin
Used for the VM drop circuit reference voltage when VM (max) >
= 22 V.
Left open when VM (max) <
= 22 V.
6
RF1
Output current detection pin
Externally connected to RF2.
(Connect a detection resistor between this pin and GND.)
7
P_GND1
Power GND pin
Externally connects to P_GND2.
8
NC
Not connected
9
ISD
Overcurrent detection output pin
Connects to the OC pin of the TB6548F/FG.
10
IN_WN
W-phase upper drive input pin
Connects to the OUT_WN pin of the TB6548F/FG; incorporates pull-down
resistor.
11
IN_WP
W-phase lower drive input pin
Connects to the OUT_WP pin of the TB6548F/FG; incorporates pull-up
resistor.
12
IN_VN
V-phase upper drive input pin
Connects to the OUT_VN pin of the TB6548F/FG; incorporates pull-down
resistor.
13
IN_VP
V-phase lower drive input pin
Connects to the OUT_VP pin of the TB6548F/FG; incorporates pull-up
resistor.
14
IN_UN
U-phase upper drive input pin
Connects to the OUT_UN pin of the TB6548F/FG; incorporates pull-down
resistor.
15
IN_UP
U-phase lower drive input pin
Connects to the OUT_UP pin of the TB6548F/FG; incorporates pull-up
resistor.
16
S_GND
Signal GND pin
17
VCC
⎯
⎯
Control power supply pin
VCC (opr) = 4.5 to 5.5 V
18
N
Mid-point pin
Mid-point potential confirmation pin; left open
19
COMP
Location detection signal output pin
Connects to the WAVE pin of the TB6548F/FG.
20
VISD1
Overcurrent detection input pin 1
Externally connects to the RF2 pin.
21
VISD2
Overcurrent detection input pin 2
Connect a capacitor between this pin and GND. Internal resistor and
capacitor used to reduce noise.
22
NC
Not connected
⎯
23
NC
Not connected
⎯
24
P_GND2
Power GND pin
Externally connects to the P_GND1 pin.
25
RF2
Output current detection pin
Externally connects to the RF1 pin. Connect a detection resistor between
this pin and GND.
26
NC
Not connected
27
Lu
U-phase upper output Pch gate pin
Leave open.
28
OUT_U
U-phase output pin
Connects motor.
Motor drive power supply pin
Externally connects to the VM2 pin.
V-phase output pin
Connects the motor.
29
VM1
30
OUT_V
⎯
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2004-08-10
TA84005F/FG
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Motor power supply voltage
VM
25
V
Control power supply voltage
VCC
7
V
IO
1.0
A/phase
Input voltage
VIN
GND − 0.3
~VCC + 0.3 V
V
Power dissipation
Pd
Output current
1.1 (Note 2)
W
1.4 (Note 3)
Operating temperature
Topr
−30~85
°C
Storage temperature
Tstg
−55~150
°C
Note 2: Standalone
Note 3: When mounted on a PCB (50 × 50 × 1.6 mm; Cu area, 30%)
Recommended Operating Conditions (Ta = −30~85°C)
Symbol
Test
Circuit
Test Conditions
Min
Typ.
Max
Unit
Control power supply voltage
VCC
⎯
⎯
4.5
5.0
5.5
V
Motor power supply voltage
VM
⎯
⎯
10
20
22
V
Output current
IO
⎯
⎯
⎯
⎯
0.5
A
Input voltage
VIN
⎯
⎯
GND
⎯
VCC
V
fchop
⎯
⎯
15
20
50
kHz
IZ
⎯
⎯
⎯
⎯
1.0
mA
Characteristic
Chopping frequency
Vz current
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2004-08-10
TA84005F/FG
Electrical Characteristics (Ta = 25°C, VCC = 5 V, VM = 20 V)
Characteristic
Symbol
Test
Circuit
VIN (H)
1
VIN (L)
1
IIN1 (H)
2
IIN2 (H)
2
IIN1 (L)
2
IIN2 (L)
2
ICC1
3
ICC2
3
ICC3
Min
Typ.
Max
2.5
⎯
5.0
GND
⎯
0.8
⎯
⎯
20
300
450
600
⎯
⎯
1
300
450
600
Upper phase 1 ON,
lower phase 1 ON, output open
⎯
8.0
13.0
Upper phase 2 ON,
synchronous regeneration
mode, output open
⎯
7.0
12.0
3
All phases OFF, output open
⎯
6.0
11
IM1
3
Upper phase 1 ON,
lower phase 1 ON, output open
⎯
2.0
3.5
IM2
3
Upper phase 2 ON,
synchronous regeneration
mode, output open
⎯
2.0
3.5
IM3
3
All phases OFF, output open
⎯
1.8
3.2
VSAT
4
IO = 0.5 A
⎯
1.0
1.5
V
Upper output ON-resistance
Ron
5
IO = ±0.5 A, bi-directional
⎯
0.65
1.0
Ω
Lower diode forward voltage
VF (L)
6
IF = 0.5 A
⎯
1.2
1.6
V
Upper diode forward voltage
VF (H)
7
IF = 0.5 A
⎯
0.9
1.4
V
VN
8
9.88
10.4
10.92
V
VCMP
9
9.88
10.4
10.92
V
VOL (CMP)
9
GND
⎯
0.5
V
ROH (CMP)
9
⎯
7
10
13
kΩ
⎯
0.45
0.5
0.55
V
4.5
⎯
5.0
V
14
20
26
kΩ
20.9
22.0
23.1
V
⎯
180
⎯
°C
⎯
⎯
30
⎯
°C
⎯
0
100
⎯
⎯
0
50
Input voltage
Lower output saturation voltage
Mid-point voltage
Pin voltage detection level
Pin voltage detection output voltage
Overcurrent detection level
IN_UP, IN_VP, IV_WP
IN_UN, IN_VN, IN_WN
⎯
VIN = 5 V,
IN_UP, IN_VP, IN_WP
VIN = 5 V,
IN_UN, IN_VN, IN_WN
Input current
Power supply current
Test Conditions
VIN = GND,
VIN = GND,
µA
IN_UP, IN_VP, IN_WP
VM = 20 V
VRF = 0 V
VM = 20 V
VRF = 0 V
IOL = 1 mA
VRF
10
10
ROL (ISD)
10
Reference voltage
VZ
11
IZ = 0.5 mA, Tj = 25°C
TSD temperature
TSD
⎯
Tj
∆T
⎯
IL (H)
12
IL (L)
13
Overcurrent detection output voltage
Output leakage current
V
IN_UN, IN_VN, IN_WN
VOH (ISD)
TSD hysteresis width
Unit
IOH = 0.1 mA
⎯
Pch-MOS
6
mA
µA
2004-08-10
TA84005F/FG
Functions
Input
Output
IN-P
IN-N
Upper Power
Transistor
Lower Power
Transistor
High
High
ON
OFF
High
Low
High
ON
ON
Prohibit mode
High
Low
OFF
OFF
High impedance
Low
Low
OFF
ON
Low
(Note 4)
Connecting the TB6548F/FG (or TB6537P/PG/F/FG) to the TA84005F/FG allows electric motors to be controlled
by PWM.
Note 4: In Prohibit Mode, the output power transistor goes into vertical ON mode and through current may damage
the circuit. Do not use the TA84005F/FG in this mode.
This mode is not actuated when the TA84005F/FG is connected to the TB6548F/FG or TB6537P/PG/F/FG,
but can be triggered by input noise during standalone testing.
<Schematic>
VM
OUT-P
IN-P
Low active
TB6548F/FG
(TB6537P/PG
/F/FG)
OUT
OUT-N
IN-N
High active
<Lower PWM>
Connecting the TA84005F/FG to the TB6537P/PG/F/FG controls the lower PWM.
At chopping ON, the diagonally output power transistors are ON.
At chopping OFF, the lower transistor is OFF, regenerating the motor current via the upper diode
(incorporating the Pch-MOS).
VM
ON
OFF
<Coil current route>
Pch-MOS
When chopping is ON
VOUT
When chopping is OFF
OFF
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TA84005F/FG
<Synchronous rectification PWM>
Connecting the TA84005F/FG to the TB6548F/FG controls the synchronous rectification PWM.
At chopping OFF, power dissipation is reduced by operating the Pch-MOS in reverse and regenerating the
motor’s current.
VM
ON
<Coil current route>
Pch-MOS
When chopping is ON
VOUT
When chopping is OFF
OFF
<Timing Chart>
When controlling synchronous rectification PWM
IN-P
IN-N
VOUT
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2004-08-10
TA84005F/FG
Equivalent Circuit
<Overcurrent detector (RF, VISD, ISD) >
•
Input to the VISD1 pin the voltage generated at the overcurrent detection resistor RF connected to the
RF pin.
•
At chopping ON, voltage spikes at the RF pin as a result of the Pch-MOS output capacitance. To cancel
the spike, externally connect a capacitor to the VISD2 pin (10 kΩ resistor built-in).
•
If the VISD2 pin voltage exceeds the internal reference voltage (VRF = 0.5 V), the overcurrent detection
output ISD pin goes High.
Inputting the ISD pin output to the TB6537P/PG/F/FG or TB6548F/FG OC pin limits the PWM ON time
and the current at the ISD output rising edge.
VCC
0.5 V
(typ.)
20 kΩ
(typ.)
VISD1 10 kΩ VISD2
External
capacitor
ISD
<Pin voltage detector (COMP) >
The pin voltage detector outputs the result of OR-ing the output pin voltages and the virtual mid-point N
voltage to determine the majority.
(If at least two phases of the three-phase output are greater than the mid-point potential, the detector
outputs “Low”. Conversely, if at least two phases are smaller than the mid-point potential, the circuit
outputs “High”.)
10 kΩ
(typ.)
•
Majority-determining
OR data
VCC
COMP
GND
•
With the virtual mid-point potential VN used as the reference for the pin voltage detection circuit
considered as half the voltage applied to the motor, then
VN = [ (VM − Ron (upper) *IO) − (Vsat (lower) + VRF) ]/2 + Vsat + VRF
= [VM − VRF + Vsat (lower) − Ron (upper) *IO]/2 + VRF.
Here, assuming that Vsat (lower) − Ron (upper) *IO ∼
− VF ,
we have set the following: VN = [VM − VRF + VF]/2 + VRF
<Overheating protector>
•
Automatic restoration
TSD (ON) = 180°C
•
Temperature hysteresis supported
TSD (HYS) = 30°C
9
TSD (OFF) = 150°C
2004-08-10
TA84005F/FG
<Example of 24 V support>
•
Incorporate a Zener diode and make the external connections shown in the diagram below. Design the
device so that the voltage applied to the VM is clamped at 22 V below the maximum operating power
supply voltage.
•
A capacitor is needed to control the effect of the counter-electromotive force.
Verification is particularly necessary when the motor current is large at startup or at shutdown (output
OFF).
24 V
Vz pin fluctuation width
20.9 V to 23.1 V
Due to the temperature characteristics (3.5 × 3 mV/°C),
the following applies at an ambient temperature of 85°C:
VZ
Vz (max) = 23.1 + (85 − 25) × 3.5 × 3 mV
= 23.73 V
By taking the measures shown in the diagram on the right to bring
the voltage down to 22 V, the following becomes the case:
Vz (max) = 23.73 − (0.7 − 2 mV × (85 − 25) ) × 3
= 21.99 V
10
VM
2004-08-10
TA84005F/FG
Example of Application Circuit
VDD = 5 V
VM = 20 V
Location detection signal
WAVE
COMP
PWM signal
M
TB6548F/FG
TA84005F/FG
RF
ISD
Overcurrent detection signal
GND
S_GND P_GND
VISD2
1Ω
OC
0.01 µF
VISD1
Note 5: A short circuit between the outputs, or between output and supply or ground may damage the device. Design
the output, VCC, VS, and GND lines so that short circuits do not occur.
11
2004-08-10
TA84005F/FG
5V
20 V
Test Circuit 1: VIN (H), VIN (L)
17
1 2 27
4 29
19
10
18
11
500 Ω
28
12
TA84005F/FG
13
30
14
3
V
15
V
V
6
0.8 V
2.5 V
25
16
7
24
9
20
21
Input VIN = 0.8 V/2.5 V, measure the output voltage, and test the function.
5V
20 V
Test Circuit 2: IIN (H), IIN (L)
17
1 2 27
4 29
19
10
18
11
28
12
TA84005F/FG
13
30
14
3
15
6
25
5V
A
A
16
7
24
9
12
20
21
2004-08-10
TA84005F/FG
Test Circuit 3: ICC1, ICC2, ICC3, IM1, IM2, IM3
ICC
IM
A
17
1 2 27
20 V
5V
A
4 29
19
10
18
11
28
12
TA84005F/FG
13
30
14
3
15
6
0.8 V
2.5 V
25
16
7
24
9
20
21
ICC1, IM1: upper phase 1 ON, lower phase 1 ON (e.g., U-phase: H; V-phase: L; W-phase: Z)
ICC2, IM2: upper phase 1 ON, synchronous regeneration mode (e.g., U-phase: H; V-phase: H; W-phase: Z)
ICC3, IM3: all phases OFF
5V
20 V
Test Circuit 4: Vsat
17
1 2 27
4 29
19
10
18
11
28
12
TA84005F/FG
30
14
3
Vsat V
15
6
0.5 A
13
25
16
7
24
9
13
20
21
2004-08-10
TA84005F/FG
5V
20 V
Test Circuit 5: Ron
1 2 27
4 29
19
10
±0.5 A
17
V1 V
18
11
28
12
TA84005F/FG
13
30
Ron = V1/0.5
14
3
15
6
25
5V
16
7
24
9
20
21
Test Circuit 6: VF (L)
17
1 2 27
4 29
19
10
18
11
28
12
TA84005F/FG
30
14
3
VF V
15
6
0.5 A
13
25
16
7
24
9
14
20
21
2004-08-10
TA84005F/FG
Test Circuit 7: VF (H)
1 2 27
4 29
19
10
VF V
18
0.5 A
17
11
28
12
TA84005F/FG
13
30
14
3
15
6
25
16
7
24
9
20
21
5V
20 V
Test Circuit 8: VN
17
1 2 27
4 29
19
10
18
11
28
12
VN V
TA84005F/FG
13
30
14
3
15
6
25
16
7
24
9
15
20
21
2004-08-10
TA84005F/FG
5V
20 V
Test Circuit 9: VCMP, VOL (CMP), ROH (CMP)
17
1 2 27
4 29
10
A
SW1
19
18
V V2
B 10 kΩ
11
28
12
TA84005F/FG
13
30
14
3
15
6
(1)
(2)
7
24
9
20
9.88 V
5V
16
10.92 V
25
21
Where output phase 2 is High (10.92 V) and phase 1 is Low (= 9.88 V), set SW1 = A and measure
V2 = VOL (CMP).
Where output phase 1 is High (10.92 V) and phase 2 is Low (9.88 V), set SW1 = B and confirm that
5 V × 10 kΩ/(10 kΩ + 13 kΩ) < V2 < 5 V × 10 kΩ/(10 kΩ + 7 kΩ).
5V
20 V
Test Circuit 10: VRF, VOH (ISD), ROL (ISD)
17
1 2 27
4 29
19
10
18
11
28
12
TA84005F/FG
13
30
14
6
25
7
24
9
20
21
SW2
V V3
(1)
(2)
A
0.1 mA
B 100 kΩ
5V
16
0.55 V
15
0.45 V
3
Where VISD = 0.55 V, set SW2 = A and measure V3 = VOH (ISD).
Where VISD = 0.45 V, set SW2 = B and confirm that
5 V × 14 kΩ/(100 kΩ + 14 kΩ) < V3 < 5 V × 26 kΩ/(26 kΩ + 100 kΩ).
16
2004-08-10
TA84005F/FG
Test Circuit 11: VZ
V
17
1 2 27 5
0.5 mA
VZ
4 29
19
10
18
11
28
12
TA84005F/FG
13
30
14
3
15
6
25
16
7
24
9
20
21
5V
25 V
Test Circuit 12: IL (H)
17
1 2 27
4 29
19
10
Connect N pin to −0.3 V
18
11
28
12
TA84005F/FG
13
30
14
3
A
15
6
5V
25
16
7
24
9
17
20
21
2004-08-10
TA84005F/FG
5V
25 V
Test Circuit Test Circuit 13: IL (L)
17
1 2 27
4 29
19
10
18
11
A
28
12
TA84005F/FG
13
30
14
3
15
6
5V
25
16
7
24
9
18
20
21
2004-08-10
TA84005F/FG
Package Dimensions
Weight: 0.63 g (typ.)
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2004-08-10
TA84005F/FG
Notes on Contents
1. Block Diagrams
Some functional blocks, circuits, or constants may be omitted or simplified in the block diagram for
explanatory purposes.
2. Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory
purposes.
3. Timing Charts
Timing charts may be simplified for explanatory purposes.
4. Maximum Ratings
The absolute maximum ratings of a semiconductor device are a set of specified parameter values that must not
be exceeded during operation, even for an instant.
If any of these ratings are exceeded during operation, the electrical characteristics of the device may be
irreparably altered and the reliability and lifetime of the device can no longer be guaranteed.
Moreover, any exceeding of the ratings during operation may cause breakdown, damage and/or degradation in
other equipment. Applications using the device should be designed so that no maximum rating will ever be
exceeded under any operating conditions.
Before using, creating and/or producing designs, refer to and comply with the precautions and conditions set
forth in this document.
5. Application Circuits
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation
is required, especially in the phase of mass production design.
In furnishing these examples of application circuits, Toshiba does not grant the use of any industrial property
rights.
6. Test Circuits
Components in test circuits are used only to obtain and confirm device characteristics. These components and
circuits are not guaranteed to prevent malfunction or failure in application equipment.
Handling of the IC
Ensure that the product is installed correctly to prevent breakdown, damage and/or degradation in the product
or equipment.
Overcurrent Protection and Heat Protection Circuits
These protection functions are intended only as a temporary means of preventing output short circuits or other
abnormal conditions and are not guaranteed to prevent damage to the IC.
If the guaranteed operating ranges of this product are exceeded, these protection features may not operate
and some output short circuits may result in the IC being damaged.
The overcurrent protection feature is intended to protect the IC from temporary short circuits only. Short
circuits persisting over longer periods may cause excessive stress and damage the IC. Systems should be
configured so that any overcurrent condition will be eliminated as soon as possible.
Counter-electromotive Force
When the motor reverses or stops, the effect of counter-electromotive force may cause the current to flow to
the power source.
If the power supply is not equipped with sink capability, the power and output pins may exceed the maximum
rating.
The counter-electromotive force of the motor will vary depending on the conditions of use and the features of
the motor. Therefore make sure there will be no damage to or operational problem in the IC, and no damage to
or operational errors in peripheral circuits caused by counter-electromotive force.
20
2004-08-10
TA84005F/FG
RESTRICTIONS ON PRODUCT USE
030619EBA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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2004-08-10