2N2918 DUAL SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2918 is a Dual Silicon NPN Transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) Power Dissipation (One Die, TC=25°C) Power Dissipation (Both Dice, TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD PD PD TJ, Tstg ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=45V ICEO VCE=5.0V IEBO VEB=5.0V BVCBO IC=10μA 45 BVCEO IC=10mA 45 BVEBO IE=10μA 6.0 VCE(SAT) IC=1.0mA, IB=0.1mA VBE(ON) VCE=5.0V, IC=100μA hFE VCE=5.0V, IC=10μA 150 hFE VCE=5.0V, IC=10μA, TA=–55°C 30 hFE VCE=5.0V, IC=100μA 225 hFE VCE=5.0V, IC=1.0mA 300 fT VCE=5.0V, IC=500μA, f=20MHz 60 Cob VCB=5.0V, IE=0, f=140kHz NF VCE=5.0V, IC=10μA, RS=10kΩ, f=1.0kHz, BW=200Hz hFE1/hFE2 VCE=5.0V, IC=100μA 0.8 |VBE1-VBE2| VCE=5.0V, IC=10μA |VBE1-VBE2| VCE=5.0V, IC=100μA |VBE1-VBE2| VCE=5.0V, IC=1.0mA Δ(VBE1-VBE2) VCE=5.0V, IC=100μA, TA=–55°C to +25°C Δ(VBE1-VBE2) VCE=5.0V, IC=100μA, TA=+25°C to +125°C 45 45 6.0 30 300 500 750 1.5 -65 to +200 MAX 10 2.0 2.0 0.35 0.70 600 6.0 3.0 1.0 10 5.0 10 1.6 2.0 UNITS V V V mA mW mW mW W °C UNITS nA nA nA V V V V V MHz pF dB mV mV mV mV mV R1 (4-March 2011) 2N2918 DUAL SILICON NPN TRANSISTOR TO-78 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (4-March 2011) w w w. c e n t r a l s e m i . c o m