2N2060M w w w. c e n t r a l s e m i . c o m SILICON DUAL NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2060M is a silicon dual NPN transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation (One Die) PD Power Dissipation (Both Dice) PD Power Dissipation (One Die, TC=25°C) PD Power Dissipation (Both Dice, TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg ELECTRICAL SYMBOL ICBO IEBO BVCBO BVCER BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob Cib NF UNITS V V V V mA mW mW W W °C 100 80 60 7.0 500 500 600 1.5 3.0 -65 to +200 CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VCB=80V 2.0 VEB=5.0V 2.0 IC=100μA 100 IC=10mA, RBE=10Ω 80 IC=30mA 60 IE=100μA 7.0 IC=50mA, IB=5.0mA 1.2 IC=50mA, IB=5.0mA 0.9 25 150 VCE=5.0V, IC=10μA VCE=5.0V, IC=100μA 30 150 VCE=5.0V, IC=1.0mA 40 150 VCE=5.0V, IC=10mA 50 200 VCE=10V, IC=50mA, f=20MHz 60 VCB=10V, IE=0, f=1.0MHz 15 VBE=0.5V, IC=0, f=1.0MHz 85 VCE=10V, IC=300μA, RS=510Ω, f=1.0kHz, BW=200Hz 8.0 UNITS nA nA V V V V V V MHz pF pF dB R1 (2-December 2013) 2N2060M SILICON DUAL NPN TRANSISTOR MATCHING CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX hFE1/hFE2 (Note 1) VCE=5.0V, IC=100μA 0.9 1.0 hFE1/hFE2 (Note 1) VCE=5.0V, IC=1.0mA 0.9 1.0 |VBE1-VBE2| |VBE1-VBE2| VCE=5.0V, IC=100μA VCE=5.0V, IC=1.0mA UNITS 5.0 5.0 mV mV Notes: (1) The lowest reading is taken as hFE1. TO-78 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (2-December 2013) w w w. c e n t r a l s e m i . c o m