2N3810 2N3810A SILICON DUAL PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) Operating and Storage Junction Temperature ELECTRICAL SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hFE hFE fT fT Cob Cib hie hre hfe hoe NF SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg CHARACTERISTICS: (TA=25°C unless TEST CONDITIONS VCB=50V VEB=4.0V IC=10μA IC=10mA IE=10μA IC=100μA, IB=10μA IC=1.0mA, IB=100μA IC=100μA, IB=10μA IC=1.0mA, IB=100μA VCE=5.0V, IC=100μA VCE=5.0V, IC=10μA VCE=5.0V, IC=100μA VCE=5.0V, IC=500μA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500μA, f=30MHz VCE=5.0V, IC=1.0mA, f=100MHz VCB=5.0V, IE=0, f=100kHz VBE=0.5V, IC=0, f=100kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=100μA, RG=3.0kΩ, f=100Hz, BW=20Hz otherwise noted) MIN 60 60 5.0 50 500 600 -65 to +200 MAX 10 20 60 60 5.0 0.20 0.25 0.70 0.80 0.70 100 150 150 150 125 30 100 3.0 150 5.0 UNITS V V V mA mW mW °C UNITS nA nA V V V V V V V V 450 450 450 500 4.0 8.0 30 25 600 60 7.0 MHz MHz pF pF Ω x10-4 μS dB R1 (4-June 2013) 2N3810 2N3810A SILICON DUAL PNP TRANSISTORS MATCHING CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN hFE1/hFE2 (Note 1) VCE=5.0V, IC=100μA (2N3810) 0.90 hFE1/hFE2 (Note 1) VCE=5.0V, IC=100μA (2N3810A) 0.95 |VBE1-VBE2| VCE=5.0V, IC=10μA to 10mA |VBE1-VBE2| VCE=5.0V, IC=100μA (2N3810) |VBE1-VBE2| VCE=5.0V, IC=100μA (2N3810A) MAX 1.0 1.0 5.0 3.0 1.5 UNITS mV mV mV Notes: (1) The lowest reading is taken as hFE1. TO-78 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (4-June 2013) w w w. c e n t r a l s e m i . c o m 2N3810 2N3810A SILICON DUAL PNP TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (4-June 2013) w w w. c e n t r a l s e m i . c o m