CBCX68 SERIES NPN CBCX69 SERIES PNP SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBCX68 and CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCES 25 UNITS V VCEO VEBO 20 V 5.0 V IC 1.0 A ICM IB 2.0 A 100 mA IBM PD 200 mA 1.2 W TJ, Tstg ΘJA -65 to +150 °C 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=25V ICBO VCB=25V, TA=150°C TYP MAX 100 UNITS nA 10 µA 10 µA IEBO VEB=5.0V BVCBO IC=10µA 25 V BVCEO IC=10mA 20 V BVEBO IE=1.0µA 5.0 V VCE(SAT) VBE(ON) IC=1.0A, IB=100mA VCE=10V, IC=5.0mA VBE(ON) VCE=1.0V, IC=1.0A VCE=10V, IC=5.0mA hFE 0.5 0.6 V V 1.0 V 50 hFE hFE VCE=1.0V, IC=500mA (CBCX68, CBCX69) 85 375 VCE=1.0V, IC=500mA (CBCX68-16, CBCX69-16) 100 250 hFE VCE=1.0V, IC=500mA (CBCX68-25, CBCX69-25) VCE=1.0V, IC=1.0A 160 400 hFE fT VCE=5.0V, IC=10mA, f=20MHz 65 60 MHz R10 (4-January 2010) CBCX68 SERIES NPN CBCX69 SERIES PNP SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS SOT-89 CASE - MECHANICAL OUTLINE (BOTTOM VIEW) LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING: FULL PART NUMBER R10 (4-January 2010) w w w. c e n t r a l s e m i . c o m