Central TM Semiconductor Corp. CEN-U45 NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN-U45 type is an NPN Silicon Monolithic Darlington Transistor designed for applications requiring high gain and high power dissipation. MARKING CODE: FULL PART NUMBER JEDEC TO-202 CASE FEATURES: • High Collector current (2.0A) APPLICATIONS: • Designed for general purpose • High DC current gain (25K MIN) • Low Voltage (50V MAX) amplifiers and drivers MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage SYMBOL UNITS 50 V Collector-Emitter Voltage VCEO 40 V Collector-Emitter Voltage VCES 40 V Emitter-Base Voltage VEBO 12 V Collector Current IC 2.0 A Power Dissipation PD 2.0 W Power Dissipation (TC=25°C) PD 10 W TJ,Tstg -65 to +150 °C 62.5 12.5 °C/W Operating and Storage Junction Temperature VCBO Thermal Resistance ΘJA Thermal Resistance ΘJC °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO IEBO VCB=30V BVCBO IC=100μA IC=100μA 50 V 40 V 12 V VCE(SAT) VCE(SAT) IE=10μA IC=1.0A, IB=2.0mA IC=200mA, IB=2.0mA VBE(SAT) VBE(ON) IC=1.0A, IB=2.0mA VCE=5.0V, IC=1.0A BVCES BVEBO VEB=10V 100 nA 100 nA 1.5 V 1.0 V 2.0 V 2.0 V R1 (28-August 2007) Central TM CEN-U45 NPN SILICON DARLINGTON TRANSISTOR Semiconductor Corp. ELECTRICAL CHARACTERISTICS: (continued) SYMBOL TEST CONDITIONS MIN MAX hFE 25K 150K hFE VCE=5.0V, IC=200mA VCE=5.0V, IC=500mA VCE=5.0V, IC=1.0A fT Cob VCE=5.0V, IC=200mA, f=100MHz VCB=10V, IE=0, f=1.0MHz hFE UNITS 15K 4.0K 100 MHz 8.0 pF TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3) COLLECTOR MARKING CODE: FULL PART NUMBER R1 (28-August 2007)