CENTRAL CMKD6000

CMKD6000
SURFACE MOUNT
DUAL PAIR, IN SERIES
ULTRA LOW LEAKAGE
SILICON SWITCHING DIODES
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6000
consists of two pair of electrically isolated, series
configured Ultra Low Leakage Switching Diodes
manufactured by the epitaxial planar process, epoxy
molded in a ULTRAmini™ SOT-363 surface mount
package.
MARKING CODE: CK0
SOT-363 CASE
FEATURES:
• Low Total Conduction Losses
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
APPLICATIONS:
• Handheld Medical Devices
• Battery Operated Equipment
• High Speed Data Line Steering
SYMBOL
VR
VRRM
75
UNITS
V
100
V
IF
IFRM
IFSM
250
mA
500
mA
4.0
A
IFSM
PD
1.0
A
250
mW
TJ, Tstg
ΘJA
-65 to +150
°C
500
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
VR=75V
400
500
IR
VR=5.0, TA=50°C
10
100
BVR
IR=100μA
VF
IF=1.0mA
VF
VF
CT
trr
100
120
UNITS
pA
pA
V
0.77
0.85
V
IF=10mA
0.85
0.95
V
IF=100mA
0.96
1.1
V
VR=0, f=1.0MHz
IR=IF=10mA, Irr=1.0mA, RL=100Ω
1.7
2.0
pF
3.0
μs
R1 (9-May 2011)
CMKD6000
SURFACE MOUNT
DUAL PAIR, IN SERIES
ULTRA LOW LEAKAGE
SILICON SWITCHING DIODES
SOT-363 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) Cathode D2
3) Anode D3, Cathode D4
4) Anode D4
5) Cathode D3
6) Cathode D1, Anode D2
MARKING CODE: CK0
R1 (9-May 2011)
w w w. c e n t r a l s e m i . c o m