CENTRAL CMLT4413

CMLT4413
SURFACE MOUNT
COMPLEMENTARY NPN/PNP
SILICON TRANSISTOR
SOT-563 CASE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT4413
consists of one isolated 2N4401 NPN silicon transistor
and one complementary isolated 2N4403 PNP silicon
transistor, manufactured by the epitaxial planar process
and epoxy molded in an SOT-563 surface mount
package. This PICOmini™ device is designed for
small signal general purpose amplifier and switching
applications.
MARKING CODE: PC3
• Device is Halogen Free by design
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
ΘJA
NPN (Q1)
60
40
6.0
PNP (Q2)
40
40
5.0
600
350
300
150
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
ICEV
VCE=35V, VEB=0.4V
0.1
0.1
IBEV
VCE=35V, VEB=0.4V
0.1
0.1
BVCBO
IC=100μA
60
40
BVCEO
IC=1.0mA
40
40
BVEBO
IE=100μA
6.0
5.0
VCE(SAT)
IC=150mA, IB=15mA
0.40
0.40
VCE(SAT)
IC=500mA, IB=50mA
0.75
0.75
VBE(SAT)
IC=150mA, IB=15mA
0.75
0.95
0.75
0.95
VBE(SAT)
IC=500mA, IB=50mA
1.2
1.3
hFE
VCE=1.0V, IC=0.1mA
20
30
hFE
VCE=1.0V, IC=1.0mA
40
60
hFE
VCE=1.0V, IC=10mA
80
100
hFE
VCE=1.0V, IC=150mA
100
300
hFE
VCE=2.0V, IC=150mA
100
300
hFE
VCE=2.0V, IC=500mA
40
20
fT
VCE=10V, IC=20mA, f=100MHz
250
200
Cob
VCB=5.0V, IE=0, f=1.0MHz
6.5
8.5
Cib
VBE=0.5V, IC=0, f=1.0MHz
30
30
UNITS
V
V
V
mA
mW
mW
mW
°C
°C/W
UNITS
μA
μA
V
V
V
V
V
V
V
MHz
pF
pF
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
R1 (20-January 2010)
CMLT4413
SURFACE MOUNT
COMPLEMENTARY NPN/PNP
SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C)
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
hie
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
15
1.5
15
hre
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
0.1
8.0
0.1
8.0
UNITS
kΩ
x10-4
40
500
60
500
1.0
30
1.0
100
μS
-
15
-
15
ns
-
20
-
20
ns
ts
VCC=30V, VBE=2.0V, IC=150mA, IB1=15mA
VCC=30V, VBE=2.0V, IC=150mA, IB1=15mA
VCC=30V, IC=150mA, IB1=IB2=15mA
-
225
-
225
ns
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
-
30
-
30
ns
hoe
td
tr
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
MARKING CODE: PC3
R1 (20-January 2010)
w w w. c e n t r a l s e m i . c o m