PROCESS CP191V Small Signal Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 41,699 PRINCIPAL DEVICE TYPES CMLT2222A CMLT2207 CMLM2205 CMKT2207 R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP191V Typical Electrical Characteristics R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m