CENTRAL CP734V_10

PROCESS
CP734V
Small Signal Transistors
PNP - Chopper Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
31.5 x 31.5 MILS
Die Thickness
7.0 MILS
Base Bonding Pad Area
4.7 x 6.7 MILS
Emitter Bonding Pad Area
4.7 x 8.7 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 18,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
16,986
PRINCIPAL DEVICE TYPES
CMPT404A
MPS404A
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CP734V
Typical Electrical Characteristics
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m