PROCESS CP734V Small Signal Transistors PNP - Chopper Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31.5 x 31.5 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 4.7 x 6.7 MILS Emitter Bonding Pad Area 4.7 x 8.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 16,986 PRINCIPAL DEVICE TYPES CMPT404A MPS404A R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP734V Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m