CENTRAL CP392V_10

PROCESS
CP392V
Smal Signal Transistor
NPN - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
11 x 11 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Area
3.7 x 3.7 MILS
Emitter Bonding Pad Area
3.7 x 3.7 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 12,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
93,826
PRINCIPAL DEVICE TYPES
2N3904
CMKT3904
CMLT3904E
CMPT3904
CMPT3904E
CMST3904
CXT3904
CZT3904
R0
BACKSIDE COLLECTOR
R2 (13-May 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CP392V
Typical Electrical Characteristics
R2 (13-May 2010)
w w w. c e n t r a l s e m i . c o m