PROCESS CP392V Smal Signal Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 3.7 x 3.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 93,826 PRINCIPAL DEVICE TYPES 2N3904 CMKT3904 CMLT3904E CMPT3904 CMPT3904E CMST3904 CXT3904 CZT3904 R0 BACKSIDE COLLECTOR R2 (13-May 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP392V Typical Electrical Characteristics R2 (13-May 2010) w w w. c e n t r a l s e m i . c o m