PROCESS CP207 Small Signal Transistor NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 2.7 x 2.7 MILS Emitter Bonding Pad Area 2.7 x 2.7 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 6,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 93,430 PRINCIPAL DEVICE TYPES 2N2369A CMPT2369 BACKSIDE COLLECTOR R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP207 Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m