PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au-As - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 137,880 PRINCIPAL DEVICE TYPES CMPD6001 Series CMOD6001 CMLD6001 CMLD6001DO CMDD6001 R2 (3-August 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD91V Typical Electrical Characteristics R2 (3-August 2010) w w w. c e n t r a l s e m i . c o m