CZT3090LE ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3090LE is an Enhanced Specification Low VCE(SAT) NPN Silicon Power Transistor packaged in an industry standard SOT-223 case. High Collector Current, coupled with a Low Saturation Voltage, make this an excellent choice for industrial and consumer applications where electrical and thermal operational efficiency are top priorities. MARKING: FULL PART NUMBER SOT-223 CASE APPLICATIONS: • Power Management / DC-DC Converters • Portable and Battery Powered Products • LAN Equipment / Motor Controllers MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ♦ ICBO ♦ IEBO ♦ BVCBO ♦ BVCEO BVEBO VCE(SAT) ♦ VCE(SAT) ♦ VCE(SAT) ♦ VCE(SAT) ♦ hFE ♦ hFE hFE ♦ Cob fT CHARACTERISTICS: (TA=25°C) TEST CONDITIONS VCB=50V VEB=5.0V IC=100μA IC=10mA IE=10µA IC=100mA, IB=1.0mA IC=1.0A, IB=20mA IC=2.0A, IB=200mA IC=3.0A, IB=60mA VCE=2.0V, IC=500mA VCE=2.0V, IC=1.0A VCE=2.0V, IC=3.0A VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=500mA FEATURES: • Low VCE(SAT) NPN Transitor • High Current (IC=3.0A MAX) • VCE(SAT)=0.155V TYP @ IC=3.0A • SOT-223 Surface Mount Package • Complementary PNP device: CZT7090LE SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA MIN UNITS V V V A A W °C °C/W 60 50 6.0 3.0 5.0 2.0 -65 to +150 62.5 TYP MAX 50 50 37 66 77 155 50 100 150 250 60 50 6.0 300 300 150 174 25 100 UNITS nA nA V V V mV mV mV mV pF MHz ♦ Enhanced Specification R1 (1-March 2010) CZT3090LE ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R1 (1-March 2010) w w w. c e n t r a l s e m i . c o m