CYT7090LD SURFACE MOUNT DUAL, ISOLATED LOW VCE(SAT) PNP SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT7090LD consists of two (2) isolated Low VCE(SAT) PNP Power Transistors packaged in an epoxy molded SOT-228 surface mount case. MARKING: FULL PART NUMBER SOT-228 CASE APPLICATIONS: • DC/DC Converters (low and medium power) FEATURES: • Power Management • Low Saturation Voltage, 750mV MAX @ IC=2.0A • High Current, IC=3.0A • Supply Line Switching • Efficient Dual Device Package MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA ELECTRICAL SYMBOL ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE fT CHARACTERISTICS PER TRANSISTOR: (TA=25°C TEST CONDITIONS MIN VCB=30V VCB=30V, TA=100°C VEB=4.0V IC=100µA 50 IC=10mA 40 IE=100µA 5.0 IC=500mA, IB=5.0mA IC=1.0A, IB=10mA IC=2.0A, IB=50mA IC=1.0A, IB=10mA 300 VCE=2.0V, IC=10mA VCE=2.0V, IC=500mA 250 VCE=2.0V, IC=1.0A 200 VCE=2.0V, IC=2.0A 150 VCE=5.0V, IC=50mA, f=50MHz 100 UNITS V V V A A W °C °C/W 50 40 5.0 3.0 5.0 2.0 -65 to +150 62.5 unless otherwise noted) TYP MAX 100 10 100 100 175 250 0.8 250 450 750 1.0 800 UNITS nA µA nA V V V mV mV mV V MHz R1 (23-February 2010) CYT7090LD SURFACE MOUNT DUAL, ISOLATED LOW VCE(SAT) PNP SILICON POWER TRANSISTORS SOT-228 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Collector Q1 2) Collector Q1 3) Collector Q2 4) Collector Q2 5) 6) 7) 8) Emitter Q2 Base Q2 Emitter Q1 Base Q1 MARKING: FULL PART NUMBER R1 (23-February 2010) w w w. c e n t r a l s e m i . c o m