FAIRCHILD FQT1N80TFWS

QFET
®
FQT1N80
N-Channel MOSFET
800V, 0.2A, 20Ω
Features
Description
• RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( Typ. 5.5nC)
• Low Crss ( Typ. 2.7pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
D
D
S
G
G
SOT-223
FQT Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
-Continuous (TC = 25oC)
Units
V
±30
V
0.2
-Continuous (TC = 100oC)
- Pulsed
FQT1N80
800
A
0.12
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
0.2
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.2
mJ
dv/dt
Peak Diode Recovery dv/dt
4.0
V/ns
0.8
A
(Note 2)
90
mJ
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
2.1
W
0.02
W/oC
-55 to +150
oC
300
oC
- Derate above 25oC
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient*
Min.
Max.
Units
-
60
oC/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2007 Fairchild Semiconductor Corporation
FQT1N80 Rev. A
1
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FQT1N80 N-Channel MOSFET
November 2007
Device Marking
FQT1N80
Device
FQT1N80
Package
SOT-223
Reel Size
330mm
Tape Width
12mm
Quantity
4000
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
800
-
-
V
ID = 250µA, Referenced to 25 C
-
0.8
-
V/oC
VDS = 800V, VGS = 0V
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TJ = 25oC
o
-
-
25
VDS = 640V, TC = 125oC
-
-
250
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
15.5
20
Ω
-
0.75
-
S
µA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250µA
Static Drain to Source On Resistance
VGS = 10V, ID = 0.1A
gFS
Forward Transconductance
VDS = 40V, ID = 0.1A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 640V, ID = 1A
VGS = 10V
(Note 4, 5)
-
150
195
pF
-
20
30
pF
-
2.7
5.0
pF
-
5.5
7.2
nC
-
1.1
-
nC
-
3.3
-
nC
-
10
30
ns
-
25
60
ns
-
15
40
ns
-
25
60
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 400V, ID = 1A
RG = 25Ω
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
0.2
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
0.8
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 0.2A
-
-
1.4
V
trr
Reverse Recovery Time
-
300
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 1A
dIF/dt = 100A/µs
-
0.6
-
µC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 170mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 1A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FQT1N80 Rev. A
2
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FQT1N80 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
FQT1N80 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
0
ID, Drain Current [A]
10
ID, Drain Current [A]
Top :
-1
10
0
10
o
150 C
o
25 C
o
-55 C
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
-2
10
※ Notes :
1. VDS = 50V
2. 250µs Pulse Test
-1
-1
0
10
10
1
10
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
50
40
VGS = 10V
30
VGS = 20V
20
10
※ Note : TJ = 25℃
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
2.0
0.2
0.4
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
250
150
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
50
1.0
1.2
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
Capacitance [pF]
Ciss
100
0.8
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
200
0.6
VSD, Source-Drain voltage [V]
VDS = 160V
10
VDS = 400V
VDS = 640V
8
6
4
2
※ Note : ID = 1.0 A
0
-1
10
0
10
0
1
10
FQT1N80 Rev. A
0
1
2
3
4
5
6
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FQT1N80 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 0.1 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
0.20
Operation in This Area
is Limited by R DS(on)
0.18
0
0.16
100 µs
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
10 ms
100 ms
1s
-1
10
DC
-2
10
※ Notes :
0.14
0.12
0.10
0.08
0.06
o
1. TC = 25 C
0.04
o
2. TJ = 150 C
3. Single Pulse
0.02
-3
10
0
10
1
2
10
0.00
25
3
10
10
50
VDS, Drain-Source Voltage [V]
75
100
125
150
TC, Case Temperature [°C]
Figure 11. Transient Thermal Response Curve
10
2
Zθ JC(t), Thermal Response
D = 0 .5
10
※ N o te s :
1 . Z θ J C( t) = 6 0 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .2
1
0 .1
0 .0 5
PDM
0 .0 2
10
t1
0
0 .0 1
t2
s in g le p u ls e
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FQT1N80 Rev. A
4
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FQT1N80 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQT1N80 Rev. A
5
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FQT1N80 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
GS
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a te P u ls e W id t h
D = -------------------------G a t e P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lta g e D r o p
FQT1N80 Rev. A
6
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FQT1N80 N-Channel MOSFET
Mechanical Dimensions
3.00 ±0.10
FQT1N80 Rev. A
4.60 ±0.25
6.50 ±0.20
(0.89)
(0.95)
(0.46)
1.60 ±0.20
2.30 TYP
0.70 ±0.10
(0.95)
7
10
+0.10
0.25 –0.05
0°~
7.00 ±0.30
(0.60)
+0.04
0.06 –0.02
(0.60)
3.50 ±0.20
1.75 ±0.20
MAX1.80
0.65 ±0.20
0.08MAX
SOT-223
°
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1.
2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
FQT1N80 Rev. A
8
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FQT1N80 N-Channel MOSFET
TRADEMARKS