QFET ® FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 5.5nC) • Low Crss ( Typ. 2.7pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D D S G G SOT-223 FQT Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) Units V ±30 V 0.2 -Continuous (TC = 100oC) - Pulsed FQT1N80 800 A 0.12 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 0.2 A EAR Repetitive Avalanche Energy (Note 1) 0.2 mJ dv/dt Peak Diode Recovery dv/dt 4.0 V/ns 0.8 A (Note 2) 90 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) 2.1 W 0.02 W/oC -55 to +150 oC 300 oC - Derate above 25oC Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction to Ambient* Min. Max. Units - 60 oC/W * When mounted on the minimum pad size recommended (PCB Mount) ©2007 Fairchild Semiconductor Corporation FQT1N80 Rev. A 1 www.fairchildsemi.com FQT1N80 N-Channel MOSFET November 2007 Device Marking FQT1N80 Device FQT1N80 Package SOT-223 Reel Size 330mm Tape Width 12mm Quantity 4000 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units 800 - - V ID = 250µA, Referenced to 25 C - 0.8 - V/oC VDS = 800V, VGS = 0V Off Characteristics BVDSS ∆BVDSS / ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC o - - 25 VDS = 640V, TC = 125oC - - 250 VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 15.5 20 Ω - 0.75 - S µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 0.1A gFS Forward Transconductance VDS = 40V, ID = 0.1A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 640V, ID = 1A VGS = 10V (Note 4, 5) - 150 195 pF - 20 30 pF - 2.7 5.0 pF - 5.5 7.2 nC - 1.1 - nC - 3.3 - nC - 10 30 ns - 25 60 ns - 15 40 ns - 25 60 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 400V, ID = 1A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 0.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 0.8 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 0.2A - - 1.4 V trr Reverse Recovery Time - 300 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 1A dIF/dt = 100A/µs - 0.6 - µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 170mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 1A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FQT1N80 Rev. A 2 www.fairchildsemi.com FQT1N80 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted FQT1N80 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 ID, Drain Current [A] 10 ID, Drain Current [A] Top : -1 10 0 10 o 150 C o 25 C o -55 C ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -2 10 ※ Notes : 1. VDS = 50V 2. 250µs Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 50 40 VGS = 10V 30 VGS = 20V 20 10 ※ Note : TJ = 25℃ 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test -1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 2.0 0.2 0.4 ID, Drain Current [A] Figure 5. Capacitance Characteristics 250 150 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 50 1.0 1.2 Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Capacitance [pF] Ciss 100 0.8 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 200 0.6 VSD, Source-Drain voltage [V] VDS = 160V 10 VDS = 400V VDS = 640V 8 6 4 2 ※ Note : ID = 1.0 A 0 -1 10 0 10 0 1 10 FQT1N80 Rev. A 0 1 2 3 4 5 6 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQT1N80 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 0.1 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 0.20 Operation in This Area is Limited by R DS(on) 0.18 0 0.16 100 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 100 ms 1s -1 10 DC -2 10 ※ Notes : 0.14 0.12 0.10 0.08 0.06 o 1. TC = 25 C 0.04 o 2. TJ = 150 C 3. Single Pulse 0.02 -3 10 0 10 1 2 10 0.00 25 3 10 10 50 VDS, Drain-Source Voltage [V] 75 100 125 150 TC, Case Temperature [°C] Figure 11. Transient Thermal Response Curve 10 2 Zθ JC(t), Thermal Response D = 0 .5 10 ※ N o te s : 1 . Z θ J C( t) = 6 0 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t) 0 .2 1 0 .1 0 .0 5 PDM 0 .0 2 10 t1 0 0 .0 1 t2 s in g le p u ls e 10 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] FQT1N80 Rev. A 4 www.fairchildsemi.com FQT1N80 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQT1N80 Rev. A 5 www.fairchildsemi.com FQT1N80 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) GS G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a te P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lta g e D r o p FQT1N80 Rev. A 6 www.fairchildsemi.com FQT1N80 N-Channel MOSFET Mechanical Dimensions 3.00 ±0.10 FQT1N80 Rev. A 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 0.70 ±0.10 (0.95) 7 10 +0.10 0.25 –0.05 0°~ 7.00 ±0.30 (0.60) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 FQT1N80 Rev. A 8 www.fairchildsemi.com FQT1N80 N-Channel MOSFET TRADEMARKS