KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 30 Units V VCEO VEBO Collector-Emitter Voltage 30 V Emitter-Base Voltage 5 V IC Collector Current 2 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 30 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 30 BVEBO Emitter-Base Breakdown Voltage IE=1mA, IC=0 5 ICBO Collector Cut-off Current VCB=30V, IE=0 Typ. Max. Units V V V 100 nA 100 nA IEBO Emitter Cut-off Current VEB=5V, IC=0 hFE DC Current Gain VCE=2V, IC=500mA VBE (on) Base-Emitter On Voltage VCE=2V, IC=500mA 1.0 VCE (sat) Collector-Emitter Saturation Voltage IC=1.5A, IB=0.03A 2.0 fT Current Gain Bandwidth Product VCE=2V, IC=500mA 120 MHz Cob Collector Output Capacitance VCB=10V,IE=0, f=1MHz 30 pF 100 320 V V hFE Classification Classification O Y hFE 100 ~ 200 160 ~ 320 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2328A Typical Characteristics 1400 VCE = 2V IB = 6mA 1000 IB = 5mA 800 IB = 4mA 600 IB = 3mA 400 IB = 2mA 200 IB = 1mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB = 7mA 1200 1000 100 10 0 0 2 4 6 8 10 12 14 16 1 18 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC current Gain 1400 VCE = 2V IC = 50 IB 1200 IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic o Ta = 25 C 1 0.1 1000 800 600 400 200 0 0.0 0.01 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 1.4 IC (MAX) PULSE IC (MAX) 1s 1 T DC C =2 5 O o C PE RA TI N PC[W], POWER DISSIPATION 1.2 s 1m IC[A], COLLECTOR CURRENT 100 G 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 0.8 0.6 0.4 0.2 V CEO (MAX) 0.01 0.1 1.0 100 0.0 0 25 50 75 100 125 150 175 o Ta[ C], AMIBIENT TEMPERATURE Figure 6. Power Derating Rev. A2, September 2002 KSC2328A Package Dimensions TO-92L 0.70MAX. 1.00 ±0.10 1.70 ±0.20 13.50 ±0.40 8.00 ±0.20 4.90 ±0.20 0.80 ±0.10 1.00MAX. 0.50 ±0.10 1.27TYP [1.27 ±0.20] 0.45 ±0.10 3.90 ±0.20 0.45 ±0.10 3.90 ±0.20 1.45 ±0.20 2.54 TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1