KSA1203 KSA1203 Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -30 Units V VCEO VEBO Collector-Emitter Voltage -30 V Emitter-Base Voltage -5 IC V Collector Current -1.5 A IB Base Current -0.3 A PC PC * Collector Power Dissipation 500 1,000 mW mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Mounted on Ceramic Board (250mm2 × 0.8mm) Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC= -10mA, IB=0 Min. -30 Typ. Max. Units V -100 nA -100 nA BVEBO Emitter-Base Breakdown Voltage IE= -1mA, IC=0 ICBO Collector Cut-off Current VCB= -30V, IE=0 -5 V IEBO Emitter Cut-off Current VBE= -5V, IC=0 hFE DC Current Gain VCE= -2V, IC= -500mA VCE (sat) Collector-Emitter Saturation Voltage IC= -1.5A, IB= -30mA -2.0 VBE (on) Base-Emitter On Voltage VCE= -2V, IC= -500mA -1.0 fT Current Gain Bandwidth Product VCE= -2V, IC= -500mA Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 100 320 120 V V MHz 50 pF hFE Classification Classification O Y hFE 100 ~ 200 160 ~ 320 Marking SGX hFE grade ©2004 Fairchild Semiconductor Corporation Rev. A3, June 2004 KSA1203 Typical Characteristics 1000 -1.6 IB =-10mA VCE = -2V IB =-8mA -1.2 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -1.4 IB =-6mA -1.0 IB =-4mA -0.8 IB =-3mA -0.6 IB =-2mA -0.4 100 IB =-1mA -0.2 IB =0mA -0 -2 -4 -6 -8 -10 10 -12 -14 -1 -16 -10 Figure 1. Static Characteristic -10000 Figure 2. DC current Gain -10 -1.6 IC = 50IB VCE = -2V -1.4 IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -1 -0.1 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 -0.01 -1 -10 -100 -1000 0 -10000 -0.2 Figure 3. Collector-Emitter Saturation Voltage -10 10 0m s 1s VCEOMAX -0.1 -0.01 -0.1 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2004 Fairchild Semiconductor Corporation -1.0 -1.2 -1.4 -1.6 1.4 PC[W], POWER DISSIPATION s 1m s m 10 -1 -0.8 1.6 o ICMAX(Pulse) -0.6 Figure 4. Base-Emitter On Voltage Ta=25 C Single Pulse ICMAX(DC) -0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT -100 -100 1.2 M ou nt 1.0 ed 0.8 on Ce ra m 0.6 0.4 ic Bo ar d (2 50 m m 0.2 0 25 50 75 100 2 X0 . 8m 125 m ) 150 175 200 o Ta[ C], AMBIENT TEMPERATURE Figure 6. Power Derating Rev. A3, June 2004 KSA1203 Package Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A3, June 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11