FAIRCHILD KSP42BU

KSP42/43
KSP42/43
High Voltage Transistor
• Collector-Emitter Voltage: VCEO=KSP42: 300V
KSP43: 200V
• Collector Power Dissipation: PC(max)=625mW
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
VCEO
Parameter
Value
Units
: KSP42
: KSP43
300
200
V
V
: KSP42
: KSP43
300
200
V
V
Collector Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
6
V
500
mA
PC
TJ
Collector Power Dissipation
625
mW
Junction Temperature
150
TSTG
°C
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
: KSP42
: KSP43
Test Condition
IC=100µA, IE=0
* Collector -Emitter Breakdown Voltage
: KSP42
: KSP43
IC=1mA, IB=0
BVEBO
Emitter-Base Breakdown Voltage
IE=100µA, IC=0
ICBO
Collector Cut-off Current
BVCEO
IEBO
Min.
Max.
Units
300
200
V
V
300
200
V
V
6
V
: KSP42
: KSP43
VCB=200V, IE=0
VCB=160V, IE=0
100
100
nA
nA
: KSP42
: KSP43
VBE=6V, IC=0
VBE=4V, IC=0
100
100
nA
nA
Emitter Cut-off Current
* DC Current Gain
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE (sat)
* Collector-Emitter Saturation Voltage
IC=20mA, IB=2mA
0.5
V
VBE (sat)
* Base-Emitter Saturation Voltage
IC=20mA, IB=2mA
0.9
V
Cob
Output Capacitance
VCB=20V, IE=0
f=1MHz
3
4
pF
pF
hFE
: KSP42
: KSP43
fT
Current Gain Bandwidth Product
VCE=20V, IC=10mA
f=100MHz
25
40
40
50
MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP42/43
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
hFE, DC CURRENT GAIN
1000
VCE = 10V
100
10
1
10
100
10
IC = 10 IB
VBE(sat)
1
V CE(sat)
0.1
0.01
1
10
IC[mA], COLLECTOR CURRENT
100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
100
Ccb [pF], CAPACITANCE
IE = 0
f = 1MHz
10
1
0.1
1
10
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Base Capacitance
©2002 Fairchild Semiconductor Corporation
100
120
100
VCE = 20V
80
60
40
20
0
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Rev. A2, September 2002
KSP42/43
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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As used herein:
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or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1